FuSe-TG: Materials and Devices Co-Design for Next-Generation Communication Systems
FuSe-TG:下一代通信系统的材料和器件协同设计
基本信息
- 批准号:2235377
- 负责人:
- 金额:$ 60万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2023
- 资助国家:美国
- 起止时间:2023-04-15 至 2025-03-31
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
In this planning grant a team of experts will work together to address some of the critical challenges for next-generation communication systems. Semiconductors, such as silicon, gallium nitride, gallium arsenide and indium phosphide, form the backbone of today’s communication systems. For next-generation communication systems, however, multi-functional semiconductors are essentially required. Recently, ferroelectric ultrawide bandgap semiconductors have shown significantly enhanced electrical, piezoelectric, and linear and nonlinear optical properties compared to conventional semiconductors, which have made them one of the most promising materials for future communication devices. This project will facilitate forming a team of experts and establish research connections and industrial partnerships to enable the co-design of next-generation and beyond communication technologies. The planning phase focuses on seeding synergy and adding new researchers and external partners to the team to work toward three integrated thrusts, including co-design of materials and devices for ultrahigh speed communication technologies, epitaxy and heterogeneous integration, and co-design and demonstration of multifunctional energy-efficient devices. Success of this program will result in a multifunctional platform for the co-design of high-speed communication and quantum devices for future ultra-fast wireless and optical communication systems. The broader impacts also include the highly interdisciplinary nature of this project and outreach to undergraduates, underrepresented minorities, and K- 12 through the appealing potential social impacts of the research.The researchers in this team will explore high-speed semiconductor devices by addressing the energy efficiency and connectivity challenges from ultrahigh-speed operation to a far-future goal of light-wave electronics and quantum information technology. Their co-design starts from wide and ultra-wide bandgap semiconductors, including the newly discovered ferroelectric nitrides and grafting-based heterogeneous integration, to spur advances in multifunctional electronic, acoustic, photonic, light-wave electronics, and quantum devices for future high-speed communication systems. The outcomes will ultimately include significantly improved RF power density, bandwidth, reduced power consumption of operation, enhancedsecurity, and possibilities to tap into quantum information with semiconductor technology. Team members from seven universities and four industrial partners, bring together expertise ranging from materials discovery, predictive theory for design, and state-of-the-art epitaxy/characterization to a broad range of emerging technologies. The team will ultimately focus on creating communication devices that reach 10-times higher speeds in a decade and potentially connect with emerging quantum and light-wave electronic components to revolutionize sensitivity and speed, respectively. Through this planning grant, they will identify the co-design challenges and opportunities for next-generation communication technologies, create a community outreach program, engage industry partners, and find new collaborators to complement the co-design team.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
在这项规划拨款中,一个专家团队将共同努力,解决下一代通信系统的一些关键挑战。硅、氮化镓、砷化镓和磷化铟等半导体构成了当今通信系统的支柱。然而,对于下一代通信系统,基本上需要多功能半导体。最近,铁电超宽带隙半导体显示出与传统半导体相比显著增强的电学、压电以及线性和非线性光学特性,这使它们成为未来通信器件最有前途的材料之一。该项目将促进组建一个专家团队,建立研究联系和工业伙伴关系,以共同设计下一代和超越通信技术。规划阶段的重点是播种协同效应,并为团队增加新的研究人员和外部合作伙伴,以实现三个综合目标,包括用于高速通信技术的材料和设备的共同设计,外延和异构集成,以及多功能节能设备的共同设计和演示。该项目的成功将为未来超高速无线和光通信系统的高速通信和量子器件的协同设计提供一个多功能平台。更广泛的影响还包括该项目的高度跨学科性质,以及通过研究的吸引人的潜在社会影响对本科生、代表性不足的少数民族和K- 12的推广。该团队的研究人员将通过解决从超高速操作到光波电子和量子信息技术的遥远未来目标的能源效率和连接挑战来探索高速半导体器件。他们的共同设计从宽和超宽带隙半导体开始,包括新发现的铁电氮化物和基于接枝的异质集成,以刺激未来高速通信系统的多功能电子,声学,光子,光波电子和量子器件的进步。其成果最终将包括显著提高RF功率密度、带宽、降低操作功耗、增强安全性以及利用半导体技术挖掘量子信息的可能性。来自七所大学和四个工业合作伙伴的团队成员汇集了从材料发现,设计预测理论,最先进的外延/表征到广泛的新兴技术的专业知识。该团队最终将专注于创造通信设备,在十年内达到10倍的速度,并可能与新兴的量子和光波电子元件连接,以分别彻底改变灵敏度和速度。通过这项计划拨款,他们将确定下一代通信技术的共同设计挑战和机遇,创建社区推广计划,吸引行业合作伙伴,并寻找新的合作者来补充共同设计团队。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Zetian Mi其他文献
Multi-Purpose Oriented Real-World Underwater Image Enhancement
面向多用途的现实世界水下图像增强
- DOI:
10.1109/access.2020.3002883 - 发表时间:
2020-06 - 期刊:
- 影响因子:3.9
- 作者:
Zetian Mi;Yuanyuan Li;Yafei Wang;Xianping Fu - 通讯作者:
Xianping Fu
Impact of Charge Carrier Transfer and Strain Relaxation on Red-Emitting InGaN/GaN Heterostructures
载流子转移和应变弛豫对发红光 InGaN/GaN 异质结构的影响
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:7
- 作者:
Y. Malhotra;Yifan Shen;Yuanpeng Wu;Josey Hanish;Yifu Guo;Yixin Xiao;Kai Sun;Theodore Norris;Zetian Mi - 通讯作者:
Zetian Mi
Influence of laser scanning speed on the microstructure and wear resistance properties of Inconel 718 coating
- DOI:
10.1007/s10853-024-10266-7 - 发表时间:
2024-09-26 - 期刊:
- 影响因子:3.900
- 作者:
Fengming Du;Shanshan Liu;Zetian Mi;Guogang Zhang;Yan Shen;Yu Liu - 通讯作者:
Yu Liu
Ferroelectric AlScN as an Extreme Nonlinear Quantum Material beyond LiNbO3
铁电 AlScN 作为超越 LiNbO3 的极端非线性量子材料
- DOI:
- 发表时间:
2023 - 期刊:
- 影响因子:0
- 作者:
Jiangnan Liu;Pierre;Wade Wu;Qiannan Wen;Stéphane Kéna;Mack Kira;Zetian Mi - 通讯作者:
Zetian Mi
A 19 GHz All-Epitaxial Al₀.₈Sc₀.₂N Cascaded FBAR for RF Filtering Applications
适用于射频滤波应用的 19 GHz 全外延 Al₀.₈Sc₀.₂N 级联 FBAR
- DOI:
- 发表时间:
2024 - 期刊:
- 影响因子:4.9
- 作者:
Mingyo Park;Jialin Wang;Ding Wang;Zetian Mi;A. Ansari - 通讯作者:
A. Ansari
Zetian Mi的其他文献
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{{ truncateString('Zetian Mi', 18)}}的其他基金
DMREF: III-nitride Monolayers and Extreme Quantum Dots
DMREF:III族氮化物单层和极端量子点
- 批准号:
2118809 - 财政年份:2021
- 资助金额:
$ 60万 - 项目类别:
Continuing Grant
Electrically Injected Ultraviolet AlGaN Photonic Nanocrystal Surface Emitting Lasers
电注入紫外 AlGaN 光子纳米晶体表面发射激光器
- 批准号:
2026484 - 财政年份:2020
- 资助金额:
$ 60万 - 项目类别:
Standard Grant
Collaborative Research: Bandgap Engineering of Dilute Antimonide III-Nitride Nanostructures for Efficient and Stable Photocatalytic Overall Water Splitting
合作研究:稀锑化物III-氮化物纳米结构的带隙工程,用于高效稳定的光催化整体水分解
- 批准号:
1804458 - 财政年份:2018
- 资助金额:
$ 60万 - 项目类别:
Continuing Grant
Epitaxy and Characterization of h-BN/AlGaN Nanowire Heterostructures: Towards High Efficiency Light Emitters in the Ultraviolet-C Band
h-BN/AlGaN 纳米线异质结构的外延和表征:迈向紫外 C 波段的高效发光体
- 批准号:
1807984 - 财政年份:2018
- 资助金额:
$ 60万 - 项目类别:
Standard Grant
Electrically Pumped Full-Color and White-Color InGaN/GaN Surface-Emitting Lasers Monolithically Integrated on a Single Chip
单芯片上单片集成的电泵浦全色和白色 InGaN/GaN 表面发射激光器
- 批准号:
1709207 - 财政年份:2017
- 资助金额:
$ 60万 - 项目类别:
Standard Grant
Travel Support for International Symposium on Semiconductor Light Emitting Devices. To be Held in Banff, Canada, October 8-12, 2017
半导体发光器件国际研讨会的旅行支持。
- 批准号:
1745742 - 财政年份:2017
- 资助金额:
$ 60万 - 项目类别:
Standard Grant
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