Local transport in graphene nanostructures

石墨烯纳米结构中的局域传输

• 批准号: 254479281
• 负责人: Professor Dr. Christoph Tegenkamp
• 金额: --
• 依托单位: Professur Analytik an Festkörperoberflächen
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/254479281?language=en
• 关键词: Local; transport; graphene; nanostructures

In this proposal graphene will be used as a model system to study electronic transport properties not only in two, but also in one dimension. The goal of this project is to explore the transport properties in graphene nanostructures (GN) grown by self-assembly on SiC-templates of different configurations. Nanostructuring opens the possibility to functionalize the originally gap-less 2D-graphene by introducing electronic gaps and edge states. Electronic transport properties will be systematically studied as a function of ribbon width, geometry, adsorption of dopants including magnetic impurities, intercalates, and as a function of temperature by means of 4-tip STM/SEM in order to elucidate their potential with respect to further functionalization. As recently demonstrated, nanoribbon structures grown on appropriately designed SiC(0001)-MESA structures reveal an exceptional ballistic transport signature with extremely large elastic mean free path lengths (10 mu m at 300K). Using optical lithography, both the width and geometry of the ribbons will be systematically modified. Thus we want to gain controlled access to edge states, band gaps and electronic subbands. The route of processing even allows the growth of large ensembles of identical nanostructures, so that spatially averaging techniques (ARPES, Raman) can be applied to complement STM/STS and local transport data.

在这个提议中，石墨烯将被用作模型系统来研究电子输运性质，不仅在二维，而且在一维。本项目的目标是探索石墨烯纳米结构（GN）中的输运性质，通过自组装生长在不同配置的SiC模板。纳米结构化打开了通过引入电子能隙和边缘态来功能化最初无能隙的2D-石墨烯的可能性。电子输运性质将被系统地研究作为一个功能的带宽度，几何形状，吸附的掺杂剂，包括磁性杂质，插层，并作为一个功能的温度通过4-tip STM/SEM，以阐明其潜力，进一步功能化。正如最近所证明的那样，在适当设计的SiC（0001）-梅萨结构上生长的纳米结构显示出具有极大弹性平均自由程长度（300 K时为10 μ m）的特殊弹道输运特征。使用光学光刻，带的宽度和几何形状将被系统地修改。因此，我们希望获得对边缘态、带隙和电子子带的受控访问。处理的路线，甚至允许生长的大合奏相同的纳米结构，使空间平均技术（ARPES，拉曼）可以应用于补充STM/STS和本地传输数据。

项目成果

Epitaxial graphene on SiC: modification of structural and electron transport properties by substrate pretreatment

• DOI: 10.1088/0953-8984/27/18/185303
• 发表时间: 2015-05-13
• 期刊: JOURNAL OF PHYSICS-CONDENSED MATTER
• 影响因子: 2.7
• 作者: Kruskopf, Mattias;Pierz, Klaus;Schumacher, Hans W.
• 通讯作者: Schumacher, Hans W.

Graphene Ribbon Growth on Structured Silicon Carbide

• DOI: 10.1002/andp.201700052
• 发表时间: 2017-08
• 期刊: Annalen der Physik
• 影响因子: 2.4
• 作者: A. Stöhr;J. Baringhaus;J. Aprojanz;S. Link;C. Tegenkamp;Y. Niu;A. Zakharov;Chaoyu Chen;J. Avila;M. Asensio;U. Starke

Homogeneous Large-Area Quasi-Free-Standing Monolayer and Bilayer Graphene on SiC

• DOI: 10.1021/acsanm.8b02093
• 发表时间: 2019-02-01
• 期刊: ACS APPLIED NANO MATERIALS
• 影响因子: 5.9
• 作者: Pakdehi, D. Momeni;Pierz, K.;Schumacher, H. W.
• 通讯作者: Schumacher, H. W.

Quasi-free-standing bilayer graphene nanoribbons probed by electronic transport

• DOI: 10.1063/1.4975205
• 发表时间: 2017-01
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Ilio Miccoli;J. Aprojanz;J. Baringhaus;T. Lichtenstein;Lauren A. Galves;J. Lopes;C. Tegenkamp

Wafer Scale Growth and Characterization of Edge Specific Graphene Nanoribbons for Nanoelectronics

• DOI: 10.1021/acsanm.8b01780
• 发表时间: 2018-09
• 期刊: ACS Applied Nano Materials
• 影响因子: 5.9
• 作者: A. Zakharov;N. Vinogradov;J. Aprojanz;Thi Thuy Nhung Nguyen;C. Tegenkamp;C. Struzzi;T. Iakimov;R. Yakimova;V. Jokubavičius