Group IV Semiconductors Derived From Zintl Phases

Zintl 相衍生的 IV 族半导体

• 批准号: 2350483
• 负责人: Matthew Panthani
• 金额: $ 55.25万
• 依托单位: Iowa State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2024
• 资助国家: 美国
• 起止时间: 2024-05-15 至 2027-04-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2350483&HistoricalAwards=false
• 关键词: Group; IV; Semiconductors; Derived; Zintl

NON-TECHNICAL SUMMARYThis project, jointly funded by the Solid State and Materials Chemistry program in the Division of Materials Research and the Established Program to Stimulate Competitive Research (EPSCoR), focuses on developing extremely thin layered semiconductor materials with precise control over the arrangement of atoms in the material, on the surfaces of each layer, and the gaps between the layers. This level of control is expected to result in control over the material's optical properties, which could enable new technologies like integrated photonic circuits that use light to transport data and chips instead of electricity. Integrated photonic circuits have the potential to result in computers and mobile phones that use much less electricity and operate faster. The research is expected to advance fundamental knowledge in materials chemistry, nanotechnology, and semiconductors. It explores approaches to gaining atomically precise control over the structure of layered semiconductors, which can potentially lead to new synthetic methods for creating layered materials with properties that could benefit many different applications. The societal benefits of this project are broad ranging. Light-emitting semiconductors made from silicon and germanium can enable faster and more efficient computing that can substantially impact energy usage and also have the potential to enable new types of information technology like quantum computing. The materials are expected to have properties that will make them useful for applications outside of information science, like sensing and energy storage. The project also integrates the education and training of educators and students at regional high schools, community colleges, and public universities to broaden the participation of groups traditionally underrepresented in the technical workforce. The integrated educational plan gives this project a broad societal impact that addresses technological needs for a sustainable future and also prepares the future workforce to advance national security, prosperity, and national health.TECHNICAL SUMMARYIntegrating light-emitting components into microelectronic circuits has been a technological challenge due to stringent optical, electronic, and chemical requirements. The main goal of this project is to demonstrate a family of layered Group IV semiconductors with properties that meet these requirements. These layered Group IV semiconductors are derived from Zintl phases and have properties that could enable energy-efficient, ultrafast "integrated photonic" circuits. The goals of this project are to (1) synthesize layered silicon-germanium alloy semiconductors with controlled composition, structure, and surface chemistry, (2) determine how structure and chemistry influence optoelectronic properties using experimental characterization and density functional theory, and (3) characterize their thermal and environmental stability to assess their potential for real-world applications. Zintl phases comprised of atomically thin silicon-germanium alloy sheets separated by alkali metal ions or salts will be synthesized. The Zintl phases compounds will be deintercalated into multilayer semiconductors comprised of atomically thin sheets, with surfaces that can be functionalized to passivate surfaces and control their properties. In addition to computing, these materials are expected to have chemical and optoelectronic properties that could benefit numerous applications such as computing, sensing, and quantum information science. Integrated with the research are plans to work with high school STEM teachers and the NSF-funded IINSPIRE-LSAMP alliance to expand the future workforce by increasing participation of underrepresented groups and improving students' preparedness to contribute to advancing technologies that are important for national security, prosperity, and national health.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该项目由材料研究部的固态和材料化学计划以及刺激竞争研究的既定计划（EPSCoR）共同资助，重点是开发极薄的层状半导体材料，精确控制材料中原子的排列，每层的表面以及层间的间隙。这种控制水平有望控制材料的光学特性，这可能会使集成光子电路等新技术成为可能，这些新技术使用光来传输数据和芯片，而不是电力。集成光子电路有可能使计算机和移动的电话耗电更少，运行更快。这项研究有望推进材料化学、纳米技术和半导体的基础知识。它探索了获得对层状半导体结构的原子精确控制的方法，这可能会导致新的合成方法，用于创建具有可使许多不同应用受益的特性的层状材料。该项目的社会效益是广泛的。由硅和锗制成的发光半导体可以实现更快，更高效的计算，这可以大大影响能源使用，并有可能实现量子计算等新型信息技术。预计这些材料将具有使其在信息科学以外的应用中有用的特性，如传感和能量存储。该项目还整合了对地区高中、社区学院和公立大学教育工作者和学生的教育和培训，以扩大传统上在技术劳动力中代表性不足的群体的参与。综合教育计划使该项目具有广泛的社会影响力，解决了可持续未来的技术需求，并为未来的劳动力做好准备，以促进国家安全，繁荣和国民健康。技术摘要由于严格的光学，电子和化学要求，将发光元件集成到微电子电路中一直是一项技术挑战。该项目的主要目标是展示一系列具有满足这些要求的特性的分层IV族半导体。这些层状IV族半导体来自Zintl相，具有可以实现节能，超快“集成光子”电路的特性。该项目的目标是（1）合成具有可控成分，结构和表面化学的层状硅锗合金半导体，（2）使用实验表征和密度泛函理论确定结构和化学如何影响光电性能，以及（3）表征其热稳定性和环境稳定性，以评估其在现实世界中的应用潜力。将合成由原子级薄的硅锗合金片组成的Zintl相，所述硅锗合金片被碱金属离子或盐分离。Zintl相化合物将脱嵌成由原子级薄片组成的多层半导体，其表面可以被官能化以钝化表面并控制其性质。除了计算之外，这些材料还具有化学和光电特性，可以使计算，传感和量子信息科学等众多应用受益。与研究相结合的是计划与高中STEM教师和NSF资助的IINSPIRE-LSAMP联盟合作，通过增加代表性不足的群体的参与和提高学生的准备来扩大未来的劳动力，以促进对国家安全，繁荣，该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查进行评估，被认为值得支持的搜索.