Creation of High-Carrier-Concentration and High-Mobility Artificial Crystal of Group IV Semiconductors by Atomically Controlled CVD Processing

通过在热氮化的SiGe表面上沉积SiGe实现了SiGe中的N原子层掺杂，以及通过降低Si沉积温度在已经形成应变SiGe表面的P原子层上实现了高浓度的P原子层掺杂。此外，通过降低在Si表面上的B和随后的Si沉积的温度，实现了具有更高载流子浓度的B原子层掺杂的Si。此外，还阐明了在应变SiGe/Si异质界面处C原子层掺杂对混合和应变弛豫的抑制，以及在SiGe和B掺杂Si外延膜的热CVD中，应变对表面反应、偏析、固溶极限和杂质的电活性有显著影响。

N atomic-layer doping in SiGe by SiGe deposition on a thermally nitrided SiGe surface and highly concentrated P atomic-layer doping by lowering temperature of Si deposition on a P atomic layer already formed strained SiGe surface were achieved. Moreover, by lowering temperature of B and subsequent Si depositions on a Si surface, B atomic-layer doped Si with higher carrier concentration was achieved. Additionally, it was clarified that suppression of intermixing and strain relaxation by C atomic-layer doping at a strained SiGe/Si heterointerface and that, in thermal CVD of SiGe and B doped Si epitaxial films, strain significantly influences upon surface reaction, segregation, solid solubility limit and electrical activity of impurity.