Atomic transport in three-dimensional nanostructures of silicon and germanium

硅和锗三维纳米结构中的原子输运

• 批准号: 264725291
• 负责人: Professor Dr. Hartmut Bracht
• 金额: --
• 依托单位: Institut für Halbleitertechnik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/264725291?language=en
• 关键词: Atomic; transport; three; dimensional; nanostructures

With increasing downscaling of semiconductor devices the surface-to-volume ratio increases. Accordingly, the properties of surfaces and interfaces will become increasingly important to control and engineer the electronic properties of nanoelectronic devices. Present experimental results on atomic transport in nanoobjects are very limited. In particular, self-diffusion, that is the most fundamental process of mass transport in condensed matter, was not yet studied in nanoscaled Si and Ge systems. In the framework of this research project we will investigate size effects on self-diffusion in Si and Ge nanostructures to gain information on the properties of native point defects in these confined material systems. For this purpose isotopically modulated Si and Ge fin and pillar structures with different widths and diameters are prepared by means of nano imprint lithography (NIL) or electron beam lithography (EBL) followed by highly anisotropic reactive ion etching (RIE) preferentially performed at cryogenic temperatures. The isotope structures are ideal test structures for studying self-diffusion as function of the structure size, temperature, dopant concentration, ambient and irradiation conditions. The distribution of the labeled matrix and dopant atoms is measured with high resolution applying appropriate profiling techniques which involve atom probe tomography (APT), secondary ion mass spectrometry (SIMS), neutron reflectometry (NR), scanning spreading resistance microscopy (SSRM), scanning Kelvin probe microscopy (SKPM) and electrochemical capacitance voltage profiling (ECV). Scanning electron (SEM) and high resolution transmission electron microscopy (HRTEM) will be performed to analyze the morphology and structure of the Si and Ge nanoobjects before and after thermal treatments. The experimental results are compared to computer simulations to develop meaningful physical models of atomic transport in nanoscaled Si and Ge systems that consider the impact of electronic surface and interface states.

随着半导体器件尺寸的减小，表面积与体积比增大。因此，表面和界面的性质对于控制和设计纳米电子器件的电子性质将变得越来越重要。目前关于纳米物体中原子输运的实验结果非常有限。特别是，自扩散，这是凝聚态物质中最基本的质量输运过程，尚未在纳米级Si和Ge系统中研究。在这个研究项目的框架中，我们将研究尺寸对Si和Ge纳米结构中自扩散的影响，以获得这些受限材料系统中本征点缺陷特性的信息。为此，通过纳米压印光刻（NIL）或电子束光刻（EBL），随后通过优先在低温下进行的高度各向异性反应离子蚀刻（RIE）来制备具有不同宽度和直径的同位素调制的Si和Ge鳍和柱结构。同位素结构是用于研究作为结构尺寸、温度、掺杂剂浓度、环境和辐照条件的函数的自扩散的理想测试结构。标记的基质和掺杂剂原子的分布测量与高分辨率应用适当的剖析技术，涉及原子探针层析成像（APT），二次离子质谱（西姆斯），中子反射计（NR），扫描扩展电阻显微镜（SSRM），扫描开尔文探针显微镜（SKPM）和电化学电容电压剖析（ECV）。将进行扫描电子显微镜（SEM）和高分辨率透射电子显微镜（HRTEM）以分析热处理之前和之后的Si和Ge纳米物体的形态和结构。实验结果进行了比较，计算机模拟开发有意义的物理模型，考虑电子表面和界面态的影响，在纳米尺度的Si和Ge系统中的原子输运。

项目成果

Towards fabrication of 3D isotopically modulated vertical silicon nanowires in selective areas by nanosphere lithography

• DOI: 10.1016/j.mee.2017.04.030
• 发表时间: 2017-07-05
• 期刊: MICROELECTRONIC ENGINEERING
• 影响因子: 2.3
• 作者: Hamdana, Gerry;Suedkamp, Tobias;Peiner, Erwin
• 通讯作者: Peiner, Erwin

Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation

锗中 n 型掺杂剂扩散曲线的定量扫描扩散电阻显微镜和掺杂剂失活的起源

• DOI: 10.1063/1.5066617
• 发表时间: 2019
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: J. K. Prüßing;G. Hamdana;D. Bougeard;E. Peiner;H. Bracht
• 通讯作者: H. Bracht

Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection

由于应力诱导空位注入，硅纳米柱中硼和磷扩散延迟

• DOI: 10.1063/5.0078006
• 发表时间: 2022
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: J. K. Prüßing;T. Böckendorf;F. Kipke;P. Puranto;J. L. Hansen;D. Bougeard;E. Peiner;H. Bracht
• 通讯作者: H. Bracht

Self-diffusion in single crystalline silicon nanowires

单晶硅纳米线的自扩散

• DOI: 10.1063/1.4996987
• 发表时间: 2018
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: T. Südkamp;G. Hamdana;M. Descoins;D. Mangelinck;H. S. Wasisto;E. Peiner;H. Bracht
• 通讯作者: H. Bracht

Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy

• DOI: 10.1063/1.5134558
• 发表时间: 2020-02
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Jan K. Prüßing;Tim Böckendorf;G. Hamdana;E. Peiner;H. Bracht