Selbst- und Fremddiffusion in Siliziumkarbid zur Charakterisierung der atomaren Eigenpunktdefekte in Siliziumkarbid

碳化硅中的自扩散和外扩散表征碳化硅中的原子本征点缺陷

• 批准号: 5258682
• 负责人: Professor Dr. Hartmut Bracht
• 金额: --
• 依托单位: Institut für Materialphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2000
• 资助国家: 德国
• 起止时间: 1999-12-31 至 2005-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5258682?language=en
• 关键词: Selbst; und; Fremddiffusion; Siliziumkarbid; zur

The proposal aims at determining properties of native point defects in SiC that are important for diffusion processes in this wide-bandgap semiconductor. For this purpose we will use several radioactive impurity probe atoms that can be implanted at the Bonn isotope separator facility. Suitable probe atoms are 7Be and 35S which combine favourable radioactive decay properties with an expected interstitial-substitutional diffusion mechanism in SiC. This expectation is based on the data found for SiC:Be in the literature and on analogies with the well-characterized features of S in silicon.Concentration-depth profiles will be measured after diffusion annealing over a wide range of temperatures. Detailed numerical analysis of the profiles should lead to the identification of the diffusion mechanism and the transport properties of the vacancies or self-interstitials involved. In favourable cases information about the point-defect charge states and their contribution to self-diffusion in SiC is obtained as well. An ambitious goal is given by the wish to extract point-defect data both for the Si and the C sublattice. We expect that the results of this project will provide a substantial contribution to the present poor understanding of diffusion processes and point-defect behaviour in the technologically important semiconductor SiC.

该提案旨在确定SiC中的原生点缺陷的性质，这对这种宽带隙半导体中的扩散过程很重要。为此，我们将使用几个放射性杂质探针原子，可以在波恩同位素分离设施植入。合适的探针原子是7 Be和35 S，它们将有利的放射性衰变性质与SiC中预期的替代扩散机制相结合。这一预期是基于SiC：Be在文献中发现的数据和与硅中S的良好特征的类比。浓度-深度分布将在宽温度范围内扩散退火后测量。详细的数值分析的配置文件应导致识别的扩散机制和运输性能的空缺或self-promptials参与。在有利的情况下，点缺陷的电荷状态和它们的自扩散在SiC中的贡献的信息，以及获得。一个雄心勃勃的目标是希望提取点缺陷数据的Si和C亚晶格。我们期望，这个项目的结果将提供一个实质性的贡献，目前的扩散过程和点缺陷的行为在技术上重要的半导体SiC的理解不足。