Atomarer Transport und Defekte in Silizium-Germanium

硅-锗中的原子输运和缺陷

• 批准号: 5403080
• 负责人: Professor Dr. Hartmut Bracht
• 金额: --
• 依托单位: Institut für Materialphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2003
• 资助国家: 德国
• 起止时间: 2002-12-31 至 2010-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/5403080?language=en
• 关键词: Atomarer; Transport; und; Defekte; Silizium

We plan to investigate the simultaneous diffusion of self- and dopant atoms in isotopically controlled Si1-xGex heterostructures with x ranging between 0(less than)X(less or equal)1. For the diffusion experiments appropriate SiGe isotope structures will be grown by means of molecular beam epitaxy. Secondary ion mass spectrometry will be performed to measure self- and dopant diffusion profiles after annealing. The formation of microscopic defects such as dislocations and aggregates of point defects, which may occur during the growth of the layer structure or during diffusion annealing, will be investigated by means of transmission electron microskopy. First we will focus on diffusion in relaxed SiGe. Then we will conduct similar diffusion experiments with strained SiGe structures. Detailed numerical analysis of the simultaneous diffusion of self- and dopant atoms in SiGe will provide comprehensive information about the mechanisms of dopant diffusion and the properties of the native point defects involved. In particular, we expect to determine the charge state of the native point defects and their individual contributions to self-diffusion. Altogether the diffusion study will reveal the impact of Ge content and strain on dopant diffusion in SiGe.

我们计划调查的同位素控制的Si 1-xGex异质结构的自和掺杂剂原子的同时扩散，x范围在0（小于）X（小于或等于）1。对于扩散实验，将通过分子束外延生长适当的SiGe同位素结构。将进行二次离子质谱法以测量退火后的自扩散和掺杂剂扩散分布。微观缺陷的形成，如位错和点缺陷的聚集体，这可能会发生在层结构的生长过程中或扩散退火过程中，将通过透射电子显微镜进行研究。首先，我们将集中在弛豫SiGe中的扩散。然后，我们将进行类似的扩散实验与应变SiGe结构。详细的数值分析的同时扩散的自和掺杂剂原子在SiGe中将提供全面的信息掺杂剂扩散的机制和属性的原生点缺陷。特别是，我们希望确定的本征点缺陷的电荷状态和它们各自的贡献，自扩散。总之，扩散研究将揭示锗含量和应变对SiGe中掺杂剂扩散的影响。