Controlling the polarity of ScAlN via formation of cation/anion vacancy

通过形成阳离子/阴离子空位来控制 ScAlN 的极性

• 批准号: 21K04168
• 负责人: Anggraini SriAyu
• 金额: $ 2.66万
• 依托单位: National Institute of Advanced Industrial Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2021
• 资助国家: 日本
• 起止时间: 2021-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21K04168/
• 关键词: ScAlN; piezoelectric; polarity inversion; sputtering; thin films; AlN; nitride; polarity; defect; vacancy; Piezoelectricity; aluminum nitride; scandium; thin film

Previously, we have confirmed that the addition of element such as Si or Ge could inverse the polarity of ScAlN from Al-polar to N-polar. However, addition of Carbon (C) could not inverse the polarization direction of ScAlN, which is suspected to be due to the presence of nitrogen vacancy (Vn). The role of Vn on polarity is confirmed in this fiscal year by addition of element that theoretically can generate nitrogen vacancy such as magnesium (Mg) or zinc (Zn). It was found that addition of Mg or addition of Zn into ScAlN yielded in thin films with Al-polarity, which means that addition of either element was unable to inverse the polarity of ScAlN from Al-polar to N-polar. Increase in concentration of Mg or Zn added into ScAlN was only resulted in a decrease in wurtzite phase stability which led to lower piezoelectric d33 response. These results further confirm that the presence of nitrogen vacancy could not induce polarity inversion in nitride. Also, our presentation in JSAP Spring meeting 2023 was also nominated to receive best poster award.

先前，我们已经证实，添加元素如Si或Ge可以将ScAlN的极性从Al极性反转为N极性。然而，添加碳（C）不能反转ScAlN的极化方向，这被怀疑是由于氮空位（Vn）的存在。在本年度，通过添加镁（Mg）、锌（Zn）等理论上能够产生氮空位的元素，确认了Vn对极性的作用。结果表明，在ScAlN中加入Mg或Zn，薄膜的极性均为Al极性，这意味着加入任何一种元素都不能使ScAlN的极性从Al极性转变为N极性。添加到ScAlN中的Mg或Zn浓度的增加仅导致纤锌矿相稳定性的降低，从而导致较低的压电d33响应。这些结果进一步证实了氮空位的存在不会引起氮化物的极性反转。此外，我们在2023年JSAP春季会议上的演讲也被提名获得最佳海报奖。

项目成果

Polarity inversion of scandium aluminum nitride (ScAlN) piezoelectric thin films by using Ge addition

通过添加 Ge 实现氮化钪铝 (ScAlN) 压电薄膜的极性反转

• 发表时间: 2021
• 作者: Sri Ayu Anggraini;Masato Uehara;Kenji Hirata;Hiroshi Yamada;Morito Akiyama
• 通讯作者: Morito Akiyama

窒化物材料およびそれからなる圧電体並びにその圧電体を用いたＭＥＭＳデバイス、トランジスタ、インバーター、トランスデューサー、ＳＡＷデバイスおよび強誘電体メモリ

氮化物材料、由其制成的压电体、以及使用该压电体的MEMS器件、晶体管、逆变器、换能器、SAW器件和铁电存储器

• 发表时间: 2021

Effect of addition of elements in group IVB (C, Si, Ge, Sn) on polarity inversion of Scandium Aluminum Nitride (ScAlN) piezoelectric thin films

添加IVB族元素（C、Si、Ge、Sn）对氮化钪铝（ScAlN）压电薄膜极性反转的影响

• 发表时间: 2023
• 作者: Shonosuke Kimura;Takuya Hoshii;Kuniyuki Kakushima;Hithoshi Wakabayashi;and Kazuo Tsutsui;Sri Ayu Anggraini
• 通讯作者: Sri Ayu Anggraini

Controlling the Polarity of Scandium Aluminum Nitride (ScAlN) Piezoelectric Thin Films by Using Ge Addition

通过添加 Ge 控制氮化铝钪 (ScAlN) 压电薄膜的极性

• 发表时间: 2022
• 作者: Nishikawa M.;Sawai K.;Sakai K.;Kirigane N.;Ohnishi K.;Nakano W.;Matsuo Y.;Shibata H.;Sri Ayu Anggraini
• 通讯作者: Sri Ayu Anggraini

Inversing the polarity of scandium aluminum nitride (ScAlN) piezoelectric thin films by using Si addition

通过添加 Si 来反转氮化铝钪 (ScAlN) 压电薄膜的极性

• 发表时间: 2021
• 作者: Sri Ayu Anggraini;Masato Uehara;Kenji Hirata;Hiroshi Yamada;Morito Akiyama
• 通讯作者: Morito Akiyama