Controlling the polarity of ScAlN via formation of cation/anion vacancy
Controlling the polarity of ScAlN via formation of cation/anion vacancy
批准号:
21K04168
负责人:
Anggraini SriAyu
金额:
$2.66万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2021
资助国家:
日本
项目状态:
已结题
起止时间:
2021-04-01 至 2024-03-31
中文摘要
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英文摘要
Previously, we have confirmed that the addition of element such as Si or Ge could inverse the polarity of ScAlN from Al-polar to N-polar. However, addition of Carbon (C) could not inverse the polarization direction of ScAlN, which is suspected to be due to the presence of nitrogen vacancy (Vn). The role of Vn on polarity is confirmed in this fiscal year by addition of element that theoretically can generate nitrogen vacancy such as magnesium (Mg) or zinc (Zn). It was found that addition of Mg or addition of Zn into ScAlN yielded in thin films with Al-polarity, which means that addition of either element was unable to inverse the polarity of ScAlN from Al-polar to N-polar. Increase in concentration of Mg or Zn added into ScAlN was only resulted in a decrease in wurtzite phase stability which led to lower piezoelectric d33 response. These results further confirm that the presence of nitrogen vacancy could not induce polarity inversion in nitride. Also, our presentation in JSAP Spring meeting 2023 was also nominated to receive best poster award.
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Polarity inversion of scandium aluminum nitride (ScAlN) piezoelectric thin films by using Ge addition
通过添加 Ge 实现氮化钪铝 (ScAlN) 压电薄膜的极性反转
DOI:
--
发表时间:
2021
期刊:
影响因子:
--
作者:
[Sri Ayu Anggraini, Masato Uehara, Kenji Hirata, Hiroshi Yamada, Morito Akiyama]
通讯作者:
Morito Akiyama
窒化物材料およびそれからなる圧電体並びにその圧電体を用いたMEMSデバイス、トランジスタ、インバーター、トランスデューサー、SAWデバイスおよび強誘電体メモリ
氮化物材料、由其制成的压电体、以及使用该压电体的MEMS器件、晶体管、逆变器、换能器、SAW器件和铁电存储器
DOI:
--
发表时间:
2021
期刊:
影响因子:
--
作者:
[]
通讯作者:
Effect of addition of elements in group IVB (C, Si, Ge, Sn) on polarity inversion of Scandium Aluminum Nitride (ScAlN) piezoelectric thin films
添加IVB族元素(C、Si、Ge、Sn)对氮化钪铝(ScAlN)压电薄膜极性反转的影响
DOI:
--
发表时间:
2023
期刊:
影响因子:
--
作者:
[Shonosuke Kimura, Takuya Hoshii, Kuniyuki Kakushima, Hithoshi Wakabayashi, and Kazuo Tsutsui, Sri Ayu Anggraini]
通讯作者:
Sri Ayu Anggraini
Controlling the Polarity of Scandium Aluminum Nitride (ScAlN) Piezoelectric Thin Films by Using Ge Addition
通过添加 Ge 控制氮化铝钪 (ScAlN) 压电薄膜的极性
DOI:
--
发表时间:
2022
期刊:
影响因子:
--
作者:
[Nishikawa M., Sawai K., Sakai K., Kirigane N., Ohnishi K., Nakano W., Matsuo Y., Shibata H., Sri Ayu Anggraini]
通讯作者:
Sri Ayu Anggraini
Inversing the polarity of scandium aluminum nitride (ScAlN) piezoelectric thin films by using Si addition
通过添加 Si 来反转氮化铝钪 (ScAlN) 压电薄膜的极性
DOI:
--
发表时间:
2021
期刊:
影响因子:
--
作者:
[Sri Ayu Anggraini, Masato Uehara, Kenji Hirata, Hiroshi Yamada, Morito Akiyama]
通讯作者:
Morito Akiyama
国内基金
海外基金
超声驱动压电效应激活门控离子通道促眼眶膜内成骨的作用及机制研究
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批准号:82371103
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项目类别:面上项目
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资助金额:49.00万元
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批准年份:2023
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负责人:阮静
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依托单位: