希釈窒化物半導体ナノワイヤによる電流注入通信帯域レーザの開発

使用稀氮化物半导体纳米线开发电流注入通信波段激光器

• 批准号: 20J23437
• 负责人: 行宗 詳規
• 金额: $ 1.98万
• 依托单位: Ehime University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for JSPS Fellows
• 财政年份: 2020
• 资助国家: 日本
• 起止时间: 2020-04-24 至 2023-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-20J23437/
• 关键词: ナノワイヤ; 化合物半導体; 希釈窒化物

本年度は発光波長の長波長化に着目した．前年度に引き続きSi基板上のSiO2膜にナノスケール開口部を作製した加工基板による実験とBiを添加した新材料ナノワイヤについての実験も行った．具体的に行ったことは以下の通りである．①昨年度作製した，加工基板上のGaNAsナノワイヤの詳細な構造分析を行った．その結果，ナノワイヤにみられる六角形構造とシェルの形成が確認できた．さらに，昨年報告した「Polytypism in GaAs/GaNAs core-shell nanowires」と同様に，ウルツ鋼構造の減少の再現性が確認できた．②Biを添加したGaNAsBiシェルを持つナノワイヤ成長を行った．その結果，室温で1350nmまでの長波長化に成功した．GaNAsで使用した温度ではBiが導入されないことが確認された．GaNAsBi層で低温成長を行うことによりBiが導入され，発光波長が長波長化した．また，Biを導入した時にこれまで起こっていた表面の乱れも確認された．Nのみでは1080nmまでの長波長化しかできなかったが，Biを加えることで大幅な長波長化に成功した．③前年度 Nのみを導入した試料を作製したため，本年度は加工基板上にInを添加したGaAs/GaInNAs/GaAsコア－シェルナノワイヤの成長を行った．また，成長レートを昨年度の1/3に設定し，より低レートでの成長を試みた．その結果，一部パターンにおいて，成長方向が一定で，パターン通りにナノワイヤが成長した．Inを添加したことによる長波長化が確認され，その発光波長は室温で最長1270nmであった．その発光強度は昨年の３倍となった．In添加時にみられた構造の乱れは，シェル成長時にAs供給量を増加させることで確認されなかった．昨年度よりも長波長化に成功し，1300nm帯のGaInNAsナノワイヤを実現した．

This year, the phosphorescence wave length has become a long-term concern. In the previous year, the silicon dioxide film on the Si substrate was used to process the substrate. The new materials were added to the Bi, and the new materials were used to improve the quality of the substrates. The following is an annual review. The results show that the hexagonal shape of the GaNAs substrate is the same as that of the hexagonal substrate. The results show that the hexagonal structure is the same as that in the previous year. The temperature dependence of temperature is very high. 2Bi, the addition of high temperature GaNAsBi increases the growth of temperature. The results show that the room temperature 1350nm temperature increases the temperature of the growth cycle successfully. Ganas uses the ambient temperature temperature to Bi the temperature of the growth cycle. GaNAsBi increases the temperature of the low-temperature growth line, the temperature of the growth cycle, the temperature of the Bi, and the temperature of the growth cycle. Bi has been widely used in recent years. On the surface, it has been confirmed that there is a significant increase in the number of environmental pollution. In the previous year, in the previous year, N-terminal has been registered as an operator of materials and materials. In the previous year, it has been successfully implemented. 3. In this year's processing substrate, the In has been added to the substrate in order to increase the growth rate. The growth rate was set to 3 in last year's growth cycle, and the growth rate in the low temperature range was set to 3 in the previous year. The results show that the growth direction must be improved. It is necessary to add the temperature field to make sure that the wave length of the wave length is the longest 1270nm temperature at room temperature. the optical intensity is 3 times higher than that of last year. In, when the temperature is added, the temperature will cause noise. When you grow up, you can increase the supply of As and make sure that you are in good condition. In the last year, the long-term growth of the market was successful, and the success of 1300nm GaInNAs sales was realized.

项目成果

Molecular beam epitaxial growth of GaAs/GaNAsBi core?multishell nanowires

GaAs/GaNAsBi核的分子束外延生长？多壳纳米线

• DOI: 10.35848/1882-0786/ac32a7
• 发表时间: 2021
• 期刊: Applied Physics Express
• 影响因子: 2.3
• 作者: Okujima Masahiro;Yoshikawa Kohei;Mori Shota;Yukimune Mitsuki;Richards Robert D.;Zhang Bin;Chen Weimin M.;Buyanova Irina A.;Ishikawa Fumitaro
• 通讯作者: Ishikawa Fumitaro

Polytypism in GaAs/GaNAs core?shell nanowires

GaAs/GaNAs核壳纳米线的多型性

• DOI: 10.1088/1361-6528/abb904
• 发表时间: 2020
• 期刊: Nanotechnology
• 影响因子: 3.5
• 作者: Yukimune M;Fujiwara R;Mita T;Ishikawa F
• 通讯作者: Ishikawa F

分子線エピタキシーによる2インチSi基板上へのGaAsナノワイヤの成長

分子束外延在2英寸Si衬底上生长GaAs纳米线

• 发表时间: 2020
• 作者: Kondo Tomohiro;Kanai Masashi;Matsubara Junichi;Quy Pham Nguyen;Fukuyama Keita;Yamamoto Yoshihiro;Yamada Takahiro;Nishigaki Masakazu;Minamiguchi Sachiko;Takeda Masayuki;Nishio Kazuto;Matsumoto Shigemi;Muto Manabu;行宗 詳規
• 通讯作者: 行宗 詳規