CDT Compound Semiconductor Physics (PhD Progression 1+3)

CDT 化合物半导体物理（博士进修 1 3）

• 批准号: 2882400
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2882400
• 关键词: CDT; Compound; Semiconductor; Physics; PhD

The team in Cardiff successful grows epitaxial gallium nitride (GaN) layers on (111) silicon (Si) substrates. This may be one solution to enable integration of light emitting diodes (LEDs) for photonics onto standard Si process technology production lines. Key issues are wafer cracking due to -17% tensile strain of the GaN and the generation of dense misfit dislocation networks due to the misfit and the thermal expansion mismatch between GaN and Si and also the formation of good ohmic electrical contacts for device operation. Various methods to explore and reduce lattice strain will be investigated in this combined electron microscopy and electron spectroscopy study where one key question to answer is whether and to what degree the anneal of the electrical contacts enhances strain relaxation in the GaN layers underneath.Energy-dispersive X-ray spectroscopy (EDX), EDX mapping, electron energy-loss spectroscopy (EELS) with energy-loss near-edge spectroscopy (ELNES) and energy-filtered imaging (EFTEM) will be used in project B to study the local chemistry in cross-section, to measure interdiffusion at the atomic scale and optimise the quality of the electrical contact multilayers that require annealing after deposition.

加的夫成功的团队在（111）硅（SI）底物上种植了氮化甲酯（GAN）层。这可能是使光子学发射二极管（LED）集成到标准SI工艺技术生产线上的一种解决方案。关键问题是由于GAN的-17％拉伸应变以及由于GAN和SI之间的不匹配和热膨胀不匹配而产生的密集不合适网络引起的晶圆破裂，并形成了用于设备操作的良好欧姆电气接触。 Various methods to explore and reduce lattice strain will be investigated in this combined electron microscopy and electron spectroscopy study where one key question to answer is whether and to what degree the anneal of the electrical contacts enhances strain relaxation in the GaN layers underneath.Energy-dispersive X-ray spectroscopy (EDX), EDX mapping, electron energy-loss spectroscopy (EELS) with energy-loss near-edge spectroscopy （Elnes）和能量过滤成像（EFTEM）将在项目B中使用，以研究横截面的局部化学，以在原子量表下测量扩散，并优化了需要退火后需要退火的电触点多层质量。