CDT Compound Semiconductor Physics (PhD Progression 1+3)

CDT 化合物半导体物理（博士进修 1 3）

• 批准号: 2882390
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2882390
• 关键词: CDT; Compound; Semiconductor; Physics; PhD

Many modern applications (e.g. LiDAR, free space communications) require the rapid, accurate detection of weak optical signals. Internal gain within the detector can help to improve sensitivity to these signals, but if electrons and holes both cause gain in a device then a feedback loop will limit performance. Using bismuth alloying to engineer valence band structure has recently led to unprecedented improvements in APD performance by preventing holes from attaining the energy levels necessary to cause impact ionisation. While these results are promising, the technique needs to be applied to current state-of-the-art APD materials to produce game-changing devices. This project will explore the molecular beam epitaxy (MBE) growth of InAlAsBi APDs on InP. The growth of dilute bismide semiconductors is challenging, with material properties sensitively depending on a great number of parameters. Throughout the project, the student will explore the MBE growth of InAlAsBi, pursue material characterisation through photoluminescence, XRD, Nomarski microscopy and externally contracted techniques such as SIMS and TEM. They will then grow and fabricate a series of devices based on InAlAsBi and conduct detailed opto-electronic characterisation. By the end of the project, the student will understand dilute bismide APDs from growth to avalanching properties.

许多现代应用（如激光雷达、自由空间通信）需要快速、准确地检测微弱的光信号。探测器的内部增益可以帮助提高对这些信号的灵敏度，但是如果电子和空穴都在设备中引起增益，那么反馈回路将限制性能。最近，利用铋合金来设计价带结构，通过防止空穴达到导致撞击电离所必需的能级，从而使APD性能得到了前所未有的改善。虽然这些结果很有希望，但该技术需要应用于当前最先进的APD材料，以生产改变游戏规则的设备。本项目将探索InAlAsBi apd在InP上的分子束外延（MBE）生长。稀铋半导体的生长具有挑战性，材料性能敏感地依赖于大量参数。在整个项目中，学生将探索InAlAsBi的MBE生长，通过光致发光，XRD， Nomarski显微镜和外部压缩技术（如SIMS和TEM）来追求材料特性。然后，他们将生长和制造一系列基于InAlAsBi的设备，并进行详细的光电表征。在项目结束时，学生将了解稀铋apd从生长到雪崩性质。