CDT Compound Semiconductor Physics (PhD Progression 1+3)

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Lasers containing Quantum Dot (QD) active regions offer substantial advantages for application in widely tuneable semiconductor lasers, in semiconductor optical amplifiers, in mode-locked lasers and in Photonic Integrated Circuits. In each case the Optimum Epitaxial design is different, albeit based on a common material system and similar physics. Following recent advances made by the Cardiff-UCL team in the design, growth and fabrication of 1300nm emitting QD materials, we see an opportunity to develop epitaxy platforms to support world leading device performance. We have recently demonstrated QD lasers grown by IQE at manufacturing scale on 150mm and 200mm substrates but with considerable variability across the wafer. To make progress we need to understand the origin of the variability, need designs that are insensitive to this variability in the growth, and that are separately optimised for each of the applications above. Alternatively we need on-wafer characterisation that enables the identification of whole wafers or regions of a wafer to be utilised for particular types of device prior to full fabrication. We envisage that close cooperation with material growers and the rest of the team and the development of a very good understanding of the complex relationships between design, growth fabrication and characterisation will be necessary to create a world leading technology.