CDT Compound Semiconductor Physics (PhD Progression 1+3)

CDT 化合物半导体物理（博士进修 1 3）

• 批准号: 2881702
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2023
• 资助国家: 英国
• 起止时间: 2023 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2881702
• 关键词: CDT; Compound; Semiconductor; Physics; PhD

Lasers containing Quantum Dot (QD) active regions offer substantial advantages for application in widely tuneable semiconductor lasers, in semiconductor optical amplifiers, in mode-locked lasers and in Photonic Integrated Circuits. In each case the Optimum Epitaxial design is different, albeit based on a common material system and similar physics. Following recent advances made by the Cardiff-UCL team in the design, growth and fabrication of 1300nm emitting QD materials, we see an opportunity to develop epitaxy platforms to support world leading device performance. We have recently demonstrated QD lasers grown by IQE at manufacturing scale on 150mm and 200mm substrates but with considerable variability across the wafer. To make progress we need to understand the origin of the variability, need designs that are insensitive to this variability in the growth, and that are separately optimised for each of the applications above. Alternatively we need on-wafer characterisation that enables the identification of whole wafers or regions of a wafer to be utilised for particular types of device prior to full fabrication. We envisage that close cooperation with material growers and the rest of the team and the development of a very good understanding of the complex relationships between design, growth fabrication and characterisation will be necessary to create a world leading technology.

包含量子点 (QD) 有源区的激光器为广泛可调谐半导体激光器、半导体光放大器、锁模激光器和光子集成电路中的应用提供了巨大的优势。尽管基于共同的材料系统和相似的物理原理，但每种情况下的最佳外延设计都是不同的。随着卡迪夫-伦敦大学学院团队在 1300nm 发射 QD 材料的设计、生长和制造方面取得的最新进展，我们看到了开发外延平台以支持世界领先器件性能的机会。我们最近展示了 IQE 在 150mm 和 200mm 基板上以制造规模生长的 QD 激光器，但整个晶圆的变化相当大。为了取得进展，我们需要了解变异性的根源，需要对这种生长变异性不敏感的设计，并且针对上述每个应用程序分别进行优化。或者，我们需要晶圆上表征，以便能够在完全制造之前识别整个晶圆或晶圆区域，以用于特定类型的器件。我们预计，要创造世界领先的技术，与材料种植者和团队其他成员的密切合作以及对设计、生长制造和表征之间复杂关系的深入理解将是必要的。