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CDT Compound Semiconductor Physics (PhD Progression 1+3)

CDT 化合物半导体物理（博士进修 1 3）

基本信息

批准号：
2881702
负责人：
金额：
--
依托单位：
CARDIFF UNIVERSITY
依托单位国家：
英国
项目类别：
Studentship
财政年份：
2023
资助国家：
英国
起止时间：
2023 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=studentship-2881702
关键词：
CDT Compound Semiconductor Physics PhD

项目摘要

Lasers containing Quantum Dot (QD) active regions offer substantial advantages for application in widely tuneable semiconductor lasers, in semiconductor optical amplifiers, in mode-locked lasers and in Photonic Integrated Circuits. In each case the Optimum Epitaxial design is different, albeit based on a common material system and similar physics. Following recent advances made by the Cardiff-UCL team in the design, growth and fabrication of 1300nm emitting QD materials, we see an opportunity to develop epitaxy platforms to support world leading device performance. We have recently demonstrated QD lasers grown by IQE at manufacturing scale on 150mm and 200mm substrates but with considerable variability across the wafer. To make progress we need to understand the origin of the variability, need designs that are insensitive to this variability in the growth, and that are separately optimised for each of the applications above. Alternatively we need on-wafer characterisation that enables the identification of whole wafers or regions of a wafer to be utilised for particular types of device prior to full fabrication. We envisage that close cooperation with material growers and the rest of the team and the development of a very good understanding of the complex relationships between design, growth fabrication and characterisation will be necessary to create a world leading technology.

含有量子点(QD)有源区的激光器在可广泛调谐的半导体激光器、半导体光学放大器、锁模激光器和光子集成电路中的应用具有很大的优势。在每种情况下，最佳外延设计都是不同的，尽管是基于共同的材料系统和相似的物理。随着加的夫-UCL团队最近在设计、生长和制造1300 nm发射量子点材料方面取得的进展，我们看到了开发支持世界领先器件性能的外延平台的机会。我们最近展示了由IQE在150 mm和200 mm衬底上以制造规模生长的QD激光器，但在整个晶片上具有相当大的可变性。为了取得进展，我们需要了解可变性的来源，需要对增长中的可变性不敏感的设计，以及针对上述每种应用分别进行优化的设计。或者，我们需要晶片上的表征，以便能够在完全制造之前识别用于特定类型的器件的整个晶片或晶片区域。我们预计，要创造世界领先的技术，必须与材料种植者和团队其他成员密切合作，并对设计、生长、制造和表征之间的复杂关系有非常好的理解。