Mass production of semiconducting atomic-layer materials
Mass production of semiconducting atomic-layer materials
批准号:
24656028
负责人:
FUJITA Takeshi
金额:
$2.66万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2014-03-31
中文摘要
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英文摘要
Chemical exfoliation of MoS2 and WS2 by using lithium intercalation has been investigated to make atomic-layer materials for efficient mass production. The structural analysis for exfoliated materials was performed by transmission electron microscope, and the coherent interface of metallic phase (1T) and semiconducting phase (2H) was clarified. In the WS2 atomic-layer sample, the metallic superlattice phase (1T') showing the mazing lattice patterns was found. The exfoliated WS2 and MoS2 atomic-layer samples have high catalytic capability of hydrogen evolution reaction, compatible to that of Pt. This high catalytic activity comes from the conducting metallic phase (1T) and the active sites from local strain induced by the superlattice.
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化学的剥離によるWS_2ナノシートの作製と水素発生反応触媒特性
化学剥离制备WS_2纳米片及其产氢反应催化性能
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[藤田武志, 陳明偉, Damien Voiry, 山口尚登, Manish Chhowalla, 江田剛輝]
通讯作者:
江田剛輝
化学的剥離によるWS2ナノシートの作製と水素発生反応触媒特性
化学剥离制备WS2纳米片及其催化产氢反应性能
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[藤田 武志, 陳 明偉, Damien Voiry, 山口尚登, Manish Chhowalla, 江田 剛輝]
通讯作者:
江田 剛輝
DOI:
10.1038/nmat3700
发表时间:
2013-09-01
期刊:
NATURE MATERIALS
影响因子:
41.2
作者:
[Voiry, Damien, Yamaguchi, Hisato, Chhowalla, Manish]
通讯作者:
Chhowalla, Manish
DOI:
10.1002/anie.201402662
发表时间:
2014-05-05
期刊:
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
影响因子:
16.6
作者:
[Ito, Yoshikazu, Tanabe, Yoichi, Chen, Mingwei]
通讯作者:
Chen, Mingwei
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Contrastive study of articles in Romance languages
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Contrastive analysis of the noun phrase structures in Portuguese and Spanish
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依托单位:
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依托单位:
Research on Fostering the Will to Learn Science in Junior High School
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The relationships between genetic problem solving and cognitive development
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海外基金