Investigation of fundamental mechanisms of pore and network formation in mesoporous low-k dielectrics by combining spectroscopic techniques

结合光谱技术研究介孔低k电介质中孔隙和网络形成的基本机制

• 批准号: 398216953
• 负责人: Professor Dr.-Ing. Stefan E. Schulz
• 金额: --
• 依托单位: Zentrum für Mikrotechnologien (ZfM)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/398216953?language=en
• 关键词: Investigation; fundamental; mechanisms; pore; network

Porous organosilicates have been widely used for the metallization of integrated circuits in leading edge technology for over 10 years. Nevertheless, in literature, there are still open questions concerning the formation and variation of the porous structure. The aim of this project is to investigate fundamental formulations of questions about the kinetic and physical processes in porous low-k dielectric material during the curing process. The following questions will be investigated time-depended and in situ.- Which impact has the temperature on cross-linking and porogen extraction in detail?- How is the time-depended development of pores and network?- Is there a mutual interference between these two processes?- How does the process pressure influence cross-linking and porogen extraction?- Are lower temperatures useful during UV curing?- Does material damage occur during the curing process?- How does the curing process depend on porogen concentration?- How do different network materials influence the curing process?- Can spin-on ULK dielectrics be cured the same way like CVD ULKs? There is currently no difference in the literature. However, both materials could not be more different.Two different spectroscopic methods will be used to study the fundamental kinetic and physical processes of porous network formation in ultra low-k dielectrics. At the Chemnitz University of Technology, the time-dependent analysis of the network will be investigated in an experimental curing chamber with an integrated FTIR measuring system. At the Helmholtz Zentrum Rossendorf the in-situ characterization of the pore system will be done by positron annihilation spectroscopy. The two available EPOS and SPONSOR sources (AIDA I and AIDA II) are used for this purpose. By means of the pulsed positron source (EPOS), which is unique worldwide, depth-dependent material investigations can be carried out during the curing process. Associated with this, the mechanical and electrical properties will be determined in order to represent their linkage to the pore and network parameters and to place them into existing literature. With the closing of the experimental investigations, FEM simulations will support the results.

多孔有机硅酸盐在前沿技术中已广泛用于集成电路的金属化超过10年。然而，在文献中，仍然有开放的问题有关的多孔结构的形成和变化。本计画的目的是研究多孔低介电常数材料在固化过程中的动力学与物理过程的基本方程式。以下问题将根据时间和现场进行调查。温度对交联和致孔剂提取有哪些影响？孔隙和网络的时间依赖性发展如何？这两个过程之间是否存在相互干扰？工艺压力如何影响交联和致孔剂提取？UV固化过程中较低的温度是否有用？在固化过程中是否会发生材料损坏？固化过程如何取决于致孔剂浓度？不同的网络材料如何影响固化过程？旋涂ULK电介质可以像CVD ULK一样固化吗？目前文献中没有差异。然而，这两种材料是非常不同的。两种不同的光谱方法将被用来研究基本的动力学和物理过程中的多孔网络形成超低k值。在切姆尼茨理工大学，网络的时间依赖性分析将在一个实验固化室与集成FTIR测量系统进行研究。在Helmholtz Zentrum Rossendorf，将通过正电子湮没光谱法对孔隙系统进行原位表征。两个可用的EPOS和SPONSOR源（AIDA I和AIDA II）用于此目的。通过脉冲正电子源（EPOS），这是世界上唯一的，深度依赖的材料研究可以在固化过程中进行。与此相关，将确定机械和电气性能，以代表它们与孔隙和网络参数的联系，并将它们放入现有文献中。随着实验研究的结束，有限元模拟将支持结果。