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Development of continuous high rate sputtering system for three layers of magnetic recording media with ultra high density.

Development of continuous high rate sputtering system for three layers of magnetic recording media with ultra high density.
开发用于超高密度三层磁记录介质的连续高速溅射系统。
批准号:
59850049
负责人:
NAOE Masahiko
金额:
$6.14万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research
财政年份:
1984
资助国家:
日本
项目状态:
已结题
起止时间:
1984 至 1985

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中文摘要
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英文摘要
Co-Cr thin films prepared by sputtering process has been considered to be one of the most promising media for the perpendicular magnetic recording system, which is a theoretically advanced technology for the ultra high density recording and is expected to replace the conventional longitudinal magnetic recording system in the furture. For the practical realization of the perpendicular magnetic recording, the high rate sputtering system suitable for the media preparation has been strongly required. We have developed the Facing Targets Sputtering (FTS) system which is designed to be able to confine the high energy <gamma> -electrons in the space between the facing targets and promote the ionization of argon gas, even at the argon gas as low as <10゛(-4)> Torr order. Consequently, films can be deposited under wide range of argon gas pressure. The results of the films evaluation revealed that the microstructure of CoCr films are mainly dominated by the argon gas pressure during the film formation. Films prepared under the argon gas pressure lower than 1mTorr show that they are composed of fine polyhedral grains closely packed each other and the stacked up from the bottom to the top of the film. Thesefilms show excellent c-axis orientation and superior magnetic properties with compared to the films with the columnar structures, which are commonly observed among the films prepared by conventional RF diode sputtering system. Based upon these fundamental results, films were deposited using new FTS system which is capable to deposite three kinds of materials sequentially on the continuous tape substrate or on the disk substrate which is able to rotate up to 10,000 rpm during film deposition. Co-Cr tapes prepared by this new FTS system, for example, has shown excellent recording characteristics and the recording density of about 200 kBPI has been obtained.
期刊论文(11)
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会议论文
IEEE Trans.on Mag.MAG20-5. (1984)
IEEE Trans.on Mag.MAG20-5。
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通讯作者:
J.Appl.Phys.57-(1). (1985)
J.Appl.Phys.57-(1)。
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応用物理. 55-2. (1986)
应用物理学。55-2。
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通讯作者:
電子通信学会論文誌. J68C-7. (1985)
电子与通信工程师学会期刊 J68C-7 (1985)。
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通讯作者:
10
    Large capacity and high-speed random access memory devices using spin polarized electron tunneling current
    • 批准号:
      09305024
    • 项目类别:
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    • 资助金额:
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    • 财政年份:
      1997
    • 负责人:
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    • 依托单位:
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    • 资助金额:
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    • 批准号:
      04555065
    • 项目类别:
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    • 资助金额:
      $6.27万
    • 财政年份:
      1992
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    • 依托单位:
    Preparation of Epitaxially Growned Multilays Composed of Ferrimagnetic Layers and Ferrodielectric Ones and Their Application for Optical Wave Guide Devices
    • 批准号:
      03452151
    • 项目类别:
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    • 资助金额:
      $4.42万
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      1991
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