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Development of continuous high rate sputtering system for three layers of magnetic recording media with ultra high density.

开发用于超高密度三层磁记录介质的连续高速溅射系统。

基本信息

批准号：
59850049
负责人：
NAOE Masahiko
金额：
$ 6.14万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1984
资助国家：
日本
起止时间：
1984 至 1985
项目状态：
已结题

项目摘要

Co-Cr thin films prepared by sputtering process has been considered to be one of the most promising media for the perpendicular magnetic recording system, which is a theoretically advanced technology for the ultra high density recording and is expected to replace the conventional longitudinal magnetic recording system in the furture. For the practical realization of the perpendicular magnetic recording, the high rate sputtering system suitable for the media preparation has been strongly required. We have developed the Facing Targets Sputtering (FTS) system which is designed to be able to confine the high energy <gamma> -electrons in the space between the facing targets and promote the ionization of argon gas, even at the argon gas as low as <10゛(-4)> Torr order. Consequently, films can be deposited under wide range of argon gas pressure. The results of the films evaluation revealed that the microstructure of CoCr films are mainly dominated by the argon gas pressure during the film formation. Films prepared under the argon gas pressure lower than 1mTorr show that they are composed of fine polyhedral grains closely packed each other and the stacked up from the bottom to the top of the film. Thesefilms show excellent c-axis orientation and superior magnetic properties with compared to the films with the columnar structures, which are commonly observed among the films prepared by conventional RF diode sputtering system. Based upon these fundamental results, films were deposited using new FTS system which is capable to deposite three kinds of materials sequentially on the continuous tape substrate or on the disk substrate which is able to rotate up to 10,000 rpm during film deposition. Co-Cr tapes prepared by this new FTS system, for example, has shown excellent recording characteristics and the recording density of about 200 kBPI has been obtained.

溅射法制备Co-Cr薄膜被认为是垂直磁记录系统中最有前途的介质之一，它是一种理论上先进的超高密度记录技术，有望在未来取代传统的纵向磁记录系统。为了实现垂直磁记录的实际应用，迫切需要适合介质制备的高速率溅射系统。我们开发了面向目标溅射（FTS）系统，该系统旨在能够在面向目标之间的空间中限制高能<gamma> -电子，并促进氩气的电离，即使氩气低至<10 (-4)> Torr阶因此，薄膜可以在很宽的氩气压力下沉积。薄膜评价结果表明，CoCr薄膜的微观结构主要受成膜过程中氩气压力的影响。在低于1mTorr的氩气压力下制备的薄膜显示，薄膜由相互紧密堆积的细小多面体颗粒组成，并由底部到顶部堆叠。与传统的射频二极管溅射系统制备的薄膜相比，这些薄膜具有优异的c轴取向和优越的磁性能。基于这些基本结果，使用新的FTS系统沉积薄膜，该系统能够在连续磁带衬底或磁盘衬底上依次沉积三种材料，在薄膜沉积过程中能够旋转高达10,000 rpm。以该系统制备的Co-Cr磁带为例，显示出优异的记录特性，记录密度可达200 kBPI左右。