Preparation of Epitaxially Growned Multilays Composed of Ferrimagnetic Layers and Ferrodielectric Ones and Their Application for Optical Wave Guide Devices

人工多层膜由周期结构的铁磁层和铁电层组成，具有各层的特性，本研究旨在研制一种新型的溅射装置，用于制备无界面扩散和组分差异的氧化物多层膜以及氧化物多层膜工艺的建立。在溅射设备的研制方面，达到了预期的目的。两个面对的靶溅射单元安装在室上制备氧化物多层膜，因此，每个超薄氧化物层的周期性交替沉积实现。BaFe_<12>O_<19>（BaM）靶在SiO_x/Si衬底上沉积的薄膜具有良好的c轴取向。两种类型的底层，ZnO和 ...更多信息 通过改变工作气压、氧分压和衬底温度等工艺参数，制备了BaM、CoS和ZnO多层膜，并对其微观结构和磁特性进行了研究。从而建立了制备BaM和CoS铁氧体薄膜的优良工艺。尽管由于靶和膜之间的组成差异容易发生并且各层之间的界面可能是无序的，因此对于常规溅射技术难以制备超薄多层膜，这是通过使用一种新型的溅射方法来实现的，该方法在本研究中发展，以制备由不同晶体结构组成的氧化物多层膜，薄膜厚度小于100埃。从这些结果看来，由BaM和BaTiO_3层组成的多层膜的制备也是可能的。少

Artificial multilayers composed of ferrimagnetic layers and ferrodielectric ones with periodic structure possesses any characteristics of each layers and moreover, some novel effects, such as momentum one at interfaces and remarkable improvement of kerr and Faraday rotation angle are also expected.This study aimed at the development of a new type sputtering apparatus for the preparation of oxide multilayers without diffusions at interface and difference of compositions between targets and each layers as well as the establishment of the process for the oxide multilayers. With respect to the development of sputtering apparatus, the purpose was perfectly achieved. Two facing target sputtering units were mounted on the chamber to prepare the oxide multilayers and therefore, periodic alternative deposition of each ultra-thin oxide layers was achieved. The films deposited from BaFe_<12>O_<19>(BaM) targets on SiO_x/Si substrates had excellent c-axis orientation. Two type of underlayers, ZnO a … More nd CoFe_2O_4(CoS), were also prepared to make c-axis orientation of BaM ferrite layer perfect and to increase the perpendicular magnetic anisotropy of it. Some multilayered films composed of BaM, CoS and ZnO layers were prepared changing each parameters such as working gas pressure, partial oxygen pressure and substrate temperature and then, their micro structure and magnetic characteristics were investigated. Consequently, it was achieved to establish excellent process in the preparation of BaM and CoS ferrite films. Although it has been difficult to prepare ultra-thin multilayers for conventional sputtering technologies because the composition difference between targets and films was easy to occur and interfaces between each layers were likely to be disordered, it was achieved by using a new type sputtering method which was developed in this study to prepare oxide multilayers composed of different crystal structures even with ultra-thin layer thickness less than 100 A^^ﾟ.From there results, it also seemed that the preparation of multilayered films composed BaM and BaTiO_3 layers was possible. Less