Preparation of Epitaxially Growned Multilays Composed of Ferrimagnetic Layers and Ferrodielectric Ones and Their Application for Optical Wave Guide Devices
Preparation of Epitaxially Growned Multilays Composed of Ferrimagnetic Layers and Ferrodielectric Ones and Their Application for Optical Wave Guide Devices
批准号:
03452151
负责人:
NAOE Masahiko
金额:
$4.42万
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1992
中文摘要
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英文摘要
Artificial multilayers composed of ferrimagnetic layers and ferrodielectric ones with periodic structure possesses any characteristics of each layers and moreover, some novel effects, such as momentum one at interfaces and remarkable improvement of kerr and Faraday rotation angle are also expected.This study aimed at the development of a new type sputtering apparatus for the preparation of oxide multilayers without diffusions at interface and difference of compositions between targets and each layers as well as the establishment of the process for the oxide multilayers. With respect to the development of sputtering apparatus, the purpose was perfectly achieved. Two facing target sputtering units were mounted on the chamber to prepare the oxide multilayers and therefore, periodic alternative deposition of each ultra-thin oxide layers was achieved. The films deposited from BaFe_<12>O_<19>(BaM) targets on SiO_x/Si substrates had excellent c-axis orientation. Two type of underlayers, ZnO a … More nd CoFe_2O_4(CoS), were also prepared to make c-axis orientation of BaM ferrite layer perfect and to increase the perpendicular magnetic anisotropy of it. Some multilayered films composed of BaM, CoS and ZnO layers were prepared changing each parameters such as working gas pressure, partial oxygen pressure and substrate temperature and then, their micro structure and magnetic characteristics were investigated. Consequently, it was achieved to establish excellent process in the preparation of BaM and CoS ferrite films. Although it has been difficult to prepare ultra-thin multilayers for conventional sputtering technologies because the composition difference between targets and films was easy to occur and interfaces between each layers were likely to be disordered, it was achieved by using a new type sputtering method which was developed in this study to prepare oxide multilayers composed of different crystal structures even with ultra-thin layer thickness less than 100 A^^゚.From there results, it also seemed that the preparation of multilayered films composed BaM and BaTiO_3 layers was possible. Less
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(Shigeki NAKAGAWA)Yoichi FURUTO Masahiko NAOE: "Structural and Magnetic Characteristics of Co-Cr Films Sputtered in Mixture of Ar and CH_4 Mixture Gas" J.of.Magn.Magn.Mater.104-107. 2047-2048 (1992)
(Shigeki NAKAGAWA)Yoichi FURUTO Masahiko NAOE:“Ar 和 CH_4 混合气体中溅射的 Co-Cr 薄膜的结构和磁特性”J.of.Magn.Magn.Mater.104-107。
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(Masahiko NAOE)Kazuyoshi KUBOTA Shigeki NAKAGAWA: "Preparation of Soft Magnetic Films by Mechanical Alloying of Fe/Al/Si Multilayers under Ar ion bombardment" J.of Magn.Magn.Mater.112. 439-442 (1992)
(Masahiko NAOE)Kazuyoshi KUBOTA Shigeki NAKAGAWA:“在 Ar 离子轰击下通过 Fe/Al/Si 多层机械合金化制备软磁薄膜”J.of Magn.Magn.Mater.112。
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(Toyoaki HIRATA)Masahiko NAOE: "Tribological Properties of Carbon Thin Films Prepared by Plasma-Free Sputtering Method" Mat.Res.Soc.Symp.Proc.239. 635-640 (1992)
(Toyoaki HIRATA)Masahiko NAOE:“通过无等离子体溅射方法制备的碳薄膜的摩擦学性能”Mat.Res.Soc.Symp.Proc.239。
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Toyoaki HIRATA and ,Masahiko NAOE: "Improvement in Soft Magnetism of Sendust Sputtered Films for High Performance MIG head;" J. of Magn. Magn. Mater.112. 432-434 (1992)
Toyoaki HIRATA 和 Masahiko NAOE:“高性能 MIG 头的铁硅铝溅射薄膜软磁性的改进;”
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(Toyoaki HIRATA) Masahiko NAOE: "Improvement in Soft Magnetism of Sendust Sputtered Films for High Performance MIG head" J.of Magn.Magn.Mater.112. 432-434 (1992)
(Toyoaki HIRATA) Masahiko NAOE:“用于高性能 MIG 头的铁硅铝溅射薄膜软磁性的改进”J.of Magn.Magn.Mater.112。
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共 52 条
Large capacity and high-speed random access memory devices using spin polarized electron tunneling current
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批准号:09305024
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$18.5万
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财政年份:1997
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负责人:NAOE Masahiko
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依托单位:
Development of Spin Valve type of Static Memory Devices using GMR Effect
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批准号:06452213
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.8万
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财政年份:1994
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负责人:NAOE Masahiko
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依托单位:
Development of Dual Track Complimentary type recording heads and its Application to High Density Perpendicular Magnetic Recording System
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批准号:04555065
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$6.27万
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财政年份:1992
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负责人:NAOE Masahiko
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依托单位:
Study on Development of High Rate Sputtering Apparatus for Producing Perpendicular Magnetic Recording Tape.
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批准号:62850054
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$9.28万
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财政年份:1987
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负责人:NAOE Masahiko
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依托单位:
Study on Improvement of Magneto-optical Characteristics of Ferromagnetic Heusler Alloy Films with Artificial Lattice Deposited by Sputtering.
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批准号:62460117
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.74万
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财政年份:1987
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负责人:NAOE Masahiko
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依托单位:
Development of continuous high rate sputtering system for three layers of magnetic recording media with ultra high density.
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批准号:59850049
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$6.14万
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财政年份:1984
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负责人:NAOE Masahiko
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依托单位: