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Preparation of Epitaxially Growned Multilays Composed of Ferrimagnetic Layers and Ferrodielectric Ones and Their Application for Optical Wave Guide Devices

亚铁磁层和铁电层外延生长多层膜的制备及其在光波导器件中的应用

基本信息

批准号：
03452151
负责人：
NAOE Masahiko
金额：
$ 4.42万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

Artificial multilayers composed of ferrimagnetic layers and ferrodielectric ones with periodic structure possesses any characteristics of each layers and moreover, some novel effects, such as momentum one at interfaces and remarkable improvement of kerr and Faraday rotation angle are also expected.This study aimed at the development of a new type sputtering apparatus for the preparation of oxide multilayers without diffusions at interface and difference of compositions between targets and each layers as well as the establishment of the process for the oxide multilayers. With respect to the development of sputtering apparatus, the purpose was perfectly achieved. Two facing target sputtering units were mounted on the chamber to prepare the oxide multilayers and therefore, periodic alternative deposition of each ultra-thin oxide layers was achieved. The films deposited from BaFe_<12>O_<19>(BaM) targets on SiO_x/Si substrates had excellent c-axis orientation. Two type of underlayers, ZnO a … More nd CoFe_2O_4(CoS), were also prepared to make c-axis orientation of BaM ferrite layer perfect and to increase the perpendicular magnetic anisotropy of it. Some multilayered films composed of BaM, CoS and ZnO layers were prepared changing each parameters such as working gas pressure, partial oxygen pressure and substrate temperature and then, their micro structure and magnetic characteristics were investigated. Consequently, it was achieved to establish excellent process in the preparation of BaM and CoS ferrite films. Although it has been difficult to prepare ultra-thin multilayers for conventional sputtering technologies because the composition difference between targets and films was easy to occur and interfaces between each layers were likely to be disordered, it was achieved by using a new type sputtering method which was developed in this study to prepare oxide multilayers composed of different crystal structures even with ultra-thin layer thickness less than 100 A^^ﾟ.From there results, it also seemed that the preparation of multilayered films composed BaM and BaTiO_3 layers was possible. Less

由铁磁层和铁介电层组成的具有周期性结构的人工多层膜不仅具有各层的特性，而且还有望产生一些新的效应，如界面处的动量效应以及克尔和法拉第旋转角的显著提高。本研究旨在开发一种新型的溅射装置，用于制备无界面扩散和靶层与各层之间成分差异的氧化多层膜，并建立氧化多层膜的工艺。就溅射装置的研制而言，完全达到了目的。在腔室上安装两个面向目标溅射单元来制备氧化物多层膜，从而实现了每个超薄氧化物层的周期性交替沉积。BaFe_<12 bbb_ O_<19>(BaM)靶材在SiO_x/Si衬底上沉积的薄膜具有优异的c轴取向。制备了氧化锌和CoFe_2O_4（CoS）两种底层，使BaM铁氧体层的c轴取向更加完善，并提高了其垂直磁各向异性。通过改变工作气压、氧分压和衬底温度等参数，制备了由BaM、CoS和ZnO组成的多层膜，并对其微观结构和磁性进行了研究。因此，建立了良好的制备BaM和CoS铁氧体薄膜的工艺。传统的溅射技术制备超薄多层膜很困难，因为靶层和薄膜之间容易出现成分差异，并且各层之间的界面容易无序，但本研究开发的一种新型溅射方法即使在超薄层厚度小于100 a ^^的情况下，也可以制备由不同晶体结构组成的氧化物多层膜。从这些结果来看，制备由BaM和BaTiO_3层组成的多层膜是可能的。少