Development of Spin Valve type of Static Memory Devices using GMR Effect

利用 GMR 效应开发自旋阀型静态存储器件

• 批准号: 06452213
• 负责人: NAOE Masahiko
• 金额: $ 4.8万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452213/
• 关键词: GMR effect; Spin valve; Ion irradiation; Control of Interface; Dual ion beam sputtering; デュアルイオンビームスパッタ法; 多層膜; メモリー素子; Ni-Fe; Cu多層膜; イオンビームスパッタ

The giant magnetic multilayrs composed of Ni-Fe and Cu layrs whose thickness were from 10 to 35 A each were deposited on Fe buffer layr by using the dual ion beam sputtering apparatus. Assist ions were radiated to the interfaces between Ni-Fe and Cu layr and the change of giant magneto-resistance (GMR) effect on sub ion assist voltage V_<sub> from 0 to 350 V was investigated. Although the amplitude of magneto-resistivity (MR) ratio was slightly decreased, the field sensitivity of magneto-resistance was fairly improved by ion assist radiation and took the maximum value at V_<sub> of 160 V.Since Fe-Mn layr, which is commonly deposited on top of the multilayrs and used for applying exchange bias field, has poor corrosion resistivity and is easily to be oxidezed, we proposed the reversed type spin valve structure, in which FeMn layr is deposited on substrate directly and Ni-Fe/Cu/Ni-Fe layrs was deposited on it. We succeeded to deposit FeMn layr with (111) orientation by deposited on Ni-Fe layr with well (111) orientation and ion-assist radiation. Ni-Fe/Cu/Ni-Fe layrs deposited on FeMn layr with (111) orientation possessed relatively well MR ratio and excellent field sensitivity. The exchange bias field of about 20 Oe was achieved in this type of multilayrs and it worked as spin valve device.It seemed that the spin valve multilayrs deposited in this study has possibility to be applied as static memory device by using lithographic technology.

利用双离子束溅射装置在Fe缓冲层上沉积了由Ni-Fe层和Cu层组成的巨型磁性多层膜，其厚度各为10至35 A。将辅助离子辐射到Ni-Fe和Cu层之间的界面，并研究了巨磁阻（GMR）效应对子离子辅助电压V_<sub>从0到350 V的变化。虽然磁阻率（MR）比的幅度略有下降，但离子辅助辐射的磁阻场灵敏度得到了相当大的提高，并在V_<sub>为160 V时达到最大值。由于通常沉积在多层膜顶部并用于施加交换偏压场的Fe-Mn层的耐腐蚀性差且容易被氧化，因此我们提出了 反向型自旋阀结构，其中FeMn层直接沉积在衬底上，并在其上沉积Ni-Fe/Cu/Ni-Fe层。我们通过在具有良好(111)取向的Ni-Fe层上沉积和离子辅助辐射，成功地沉积了具有(111)取向的FeMn层。在(111)取向的FeMn层上沉积的Ni-Fe/Cu/Ni-Fe层具有较好的MR比和优异的场灵敏度。这种类型的多层膜实现了约20 Oe的交换偏压场，并且可以用作自旋阀器件。看来本研究中沉积的自旋阀多层膜有可能通过光刻技术应用于静态存储器件。

项目成果

Masahiro NAOE: "PREPARATION OF SOFT MAGNETIC Fe/To AND Fe : N/Ta : N MOLTILAYERED FILMS WITH LARGE MAGNETIZATION FOR INDUCTIVE RECORDIXG HEAD" Journal of Applied Physics. (発表予定). (1996)

Masahiro NAOE：“用于感应记录头的大磁化软磁 Fe/To 和 Fe : N/Ta : N MOLTILAYERED 薄膜的制备”应用物理学杂志（1996 年）。

T.Ichihara: "FABRICATION OF PUAL COMPLINEN TARY TYPE OF THIN FILM RECORDING HEADS FOR PERPENDICOLAR MAGNETIC RECORDING" Journal of Applied Physics. (発表予定). (1996)

T.Ichihara：“用于垂直磁记录的双复合型薄膜记录头的制造”应用物理学杂志（1996 年）。

Masahiko NAOE: "PREPARATION OF SOFT MAGNETIC Fe/Ta AND Fe: N/Ta: N MULTILAYERED FILMS WITH LARGE MAGNETIZATION FOR INOUCTIVE RECORDING HEAD" Journal of Applied Physics. (発表予定). (1996)

Masahiko NAOE：“用于无功记录头的大磁化软磁 Fe/Ta 和 Fe:N/Ta:N 多层薄膜的制备”应用物理学杂志（1996 年）。

Masahiko NAOE: "Voidless grainboundary growth process of Co-Cr thin films" J. of Magn. Soc. of Jpn.18[S2]. 331-334 (1994)

Masahiko NAOE：“Co-Cr 薄膜的无空晶界生长过程”J. of Magn。

Masahiko NAOE and Shigeki NAKAGAWA: "PREPARATION OF SOFT MAGNETIC Fe/Ta AND Fe : N/Ta : N MULTI-LAYERED FILMS WITH LARGE MAGNETIZATION FOR INDUCTIVE RECORDING HEAD" Journal of Applied Physics. (to be published in 1996).

Masahiko NAOE 和 Shigeki NAKAGAWA：“用于感应录音头的大磁化软磁 Fe/Ta 和 Fe:N/Ta:N 多层薄膜的制备”应用物理学杂志。