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Development of Dual Track Complimentary type recording heads and its Application to High Density Perpendicular Magnetic Recording System

双磁道互补型记录磁头的研制及其在高密度垂直磁记录系统中的应用

基本信息

批准号：
04555065
负责人：
NAOE Masahiko
金额：
$ 6.27万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1993
项目状态：
已结题

项目摘要

We proposed the dual track complimentary type of thin film recording head as a new concept to improve the efficiency of the read/write characteristics in perpendicular magnetic recording system. Since the proposed head has a magnetic core layr with its shape of character 'U', closed circuit of magnetic flux will be attained in the recording system. In order to realize the thin film heads, we have to investigate a soft magnetic thin film for a core layr of the heads, magneto-resistive heads with good soft magnetism for read out system of recorded signal and micro-fabrication technology, such as lithography techniques, for fabrication of thin film heads. For soft magnetic layrs, Fe_xN films prepared by Ion Beam Deposition method, which is investigated by the authors, revealed a soft magnetism with sufficiently large saturation magnetization 4piM_s of about 19 kG, coercivity H_c as low as about 1.0 Oe and relative permeability mu_r of as large as 1000. These results were regarded as sufficient for magnetic core layrs of the new type thin film heads. Although the giant magneto-resistivity observed in the multilayrrs composed of magnetic and non-magnetic metal layrs were very attractive for the application of the MR heads, the magnetic field sensitivity of them is too low to apply them to MR heads. We have investigate that the Ni-Fe/Cu multilayrs prepared by Ion Beam Sputtering technique exhibit relatively large MR ratio of about 16% at room temperature and the multilayr has an relatively soft magnetism, that is, low H_c of about 5 Oe and high mu_r of about 500. It was investigated that the field sensitivity DELTAMR/DELTAH of the multilayrs were controrable by ajusting the crystallites orientation of Fe-buffer layrs. (100) orientation of crystallites in Fe-buffer layrs enhance the (100) orientation of fcc crystallites in Ni-Fe/Cu multilayrs because of a heteroepitaxial effect. Ni-Fe/Cu multilayrs deposited on (100) oriented Fe-b

为了提高垂直磁记录系统的读写效率，提出了双磁道互补型薄膜记录磁头的新概念。由于所提出的磁头有一个“U”形磁芯层，在记录系统中将获得磁通的闭合回路。为了实现薄膜磁头，我们必须研究用于磁头核心层的软磁薄膜，用于记录信号读出系统的具有良好软磁的磁阻磁头，以及用于制造薄膜磁头的微制造技术，例如光刻技术。对于软磁层，本文研究的离子束沉积法制备的Fe_xN薄膜显示出足够大的软磁性能，饱和磁化强度4piM_s约为19 kG，矫顽力H_c低至1.0Oe，相对磁导率μ_r高达1000。这些结果被认为是足够的新型薄膜磁头的磁芯层。磁性和非磁性金属层组成的多层膜的巨磁阻效应对磁流变磁头的应用具有很大的吸引力，但其磁场灵敏度太低，不能应用于磁流变磁头。本文研究了用离子束溅射法制备的Ni-Fe/Cu多层膜的室温磁电阻率（MR）约为16%，具有较软的磁性，即低的H_c约为5 Oe，高的mu_r约为500。研究了通过调整Fe缓冲层的晶粒取向来控制多层膜的场灵敏度Δ MR/Δ H。(100)由于异质外延效应，Fe缓冲层中微晶的取向增强了Ni-Fe/Cu多层膜中fcc微晶的（100）取向。在（100）取向Fe-b上沉积Ni-Fe/Cu多层膜