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Study on Development of High Rate Sputtering Apparatus for Producing Perpendicular Magnetic Recording Tape.

Study on Development of High Rate Sputtering Apparatus for Producing Perpendicular Magnetic Recording Tape.
垂直磁记录磁带高速溅射装置研制的研究。
批准号:
62850054
负责人:
NAOE Masahiko
金额:
$9.28万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research
财政年份:
1987
资助国家:
日本
项目状态:
已结题
起止时间:
1987 至 1988

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中文摘要
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英文摘要
One of the most promising candidate system to achieve ultra high density magnetic recording is perpendicular magnetic recording system using Co-Cr thin film tape media. It is required to develop the continuous thin film coating system on polymer tape substrate in order to prepare such recording tape using Co Cr thin film. Facing Targets Sputtering (FTS) system has many merits in depositing thin film, such as high rate film deposition at low working gas pressure without plasma bombardment. The FTS system with role coating system has been developed in this study. This machine worked in the condition of Ar gas pressure as low as 0.1mTorr where conventional sputtering system can not work. Co-Cr thin film with good c-axis orientation can be prepared without any warp nor transformation of tape substrate caused by heat at high deposition rate of 1000A/min.. Internal stress of deposited films changed with working gas pressure, and indicates zero for films prepared at about 0.5mTorr. This stress-free thin film is very good for flexible recording media from the stand point of tribological investigation. Multilayered films constructed with 200A-thick Co-Cr layers and 50A-thick Carbon layers have been prepared so as to construct films with only fine particulates. It is demonstrated that multilayered structure constructed only Co-Cr layers becomes one of the method for controlling perpendicular coercivity. It is also investigated that two step deposition method in role coating system is very useful to avoid the degradation of crystallinity and large c-axis canting angle which occurs at the edge part of deposition area. It is investigated that Only 100A-thick initial layer constructed with depositing particles with vertical incidence to the substrate. This result means FTS system can achieve ultra high rate deposition without reduction of deposition rate.
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通讯作者:
Yoichi HOSHI: IEEE Trans.on Magn.Vol.24(6). 3015-3017 (1988)
Yoichi HOSHI:IEEE Trans.on Magn.Vol.24(6)。
DOI: --
发表时间:
期刊:
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作者: []
通讯作者:
Yoichi HOSHI: IEEE Trans.on Magn.24(6). 3015-3017 (1988)
Yoichi HOSHI:IEEE Trans.on Magn.24(6)。
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
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24
    Large capacity and high-speed random access memory devices using spin polarized electron tunneling current
    • 批准号:
      09305024
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $18.5万
    • 财政年份:
      1997
    • 负责人:
      NAOE Masahiko
    • 依托单位:
    Development of Spin Valve type of Static Memory Devices using GMR Effect
    • 批准号:
      06452213
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $4.8万
    • 财政年份:
      1994
    • 负责人:
      NAOE Masahiko
    • 依托单位:
    Development of Dual Track Complimentary type recording heads and its Application to High Density Perpendicular Magnetic Recording System
    • 批准号:
      04555065
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $6.27万
    • 财政年份:
      1992
    • 负责人:
      NAOE Masahiko
    • 依托单位:
    Preparation of Epitaxially Growned Multilays Composed of Ferrimagnetic Layers and Ferrodielectric Ones and Their Application for Optical Wave Guide Devices
    • 批准号:
      03452151
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $4.42万
    • 财政年份:
      1991
    • 负责人:
      NAOE Masahiko
    • 依托单位:
    海外基金