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Study on Development of High Rate Sputtering Apparatus for Producing Perpendicular Magnetic Recording Tape.

垂直磁记录磁带高速溅射装置研制的研究。

基本信息

批准号：
62850054
负责人：
NAOE Masahiko
金额：
$ 9.28万
依托单位：
Tokyo Institute of Technology.
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1988
项目状态：
已结题

项目摘要

One of the most promising candidate system to achieve ultra high density magnetic recording is perpendicular magnetic recording system using Co-Cr thin film tape media. It is required to develop the continuous thin film coating system on polymer tape substrate in order to prepare such recording tape using Co Cr thin film. Facing Targets Sputtering (FTS) system has many merits in depositing thin film, such as high rate film deposition at low working gas pressure without plasma bombardment. The FTS system with role coating system has been developed in this study. This machine worked in the condition of Ar gas pressure as low as 0.1mTorr where conventional sputtering system can not work. Co-Cr thin film with good c-axis orientation can be prepared without any warp nor transformation of tape substrate caused by heat at high deposition rate of 1000A/min.. Internal stress of deposited films changed with working gas pressure, and indicates zero for films prepared at about 0.5mTorr. This stress-free thin film is very good for flexible recording media from the stand point of tribological investigation. Multilayered films constructed with 200A-thick Co-Cr layers and 50A-thick Carbon layers have been prepared so as to construct films with only fine particulates. It is demonstrated that multilayered structure constructed only Co-Cr layers becomes one of the method for controlling perpendicular coercivity. It is also investigated that two step deposition method in role coating system is very useful to avoid the degradation of crystallinity and large c-axis canting angle which occurs at the edge part of deposition area. It is investigated that Only 100A-thick initial layer constructed with depositing particles with vertical incidence to the substrate. This result means FTS system can achieve ultra high rate deposition without reduction of deposition rate.

采用Co-Cr薄膜磁带介质的垂直磁记录系统是实现超高密度磁记录最有希望的候选系统之一。为了制备这种使用Co Cr薄膜的记录带，需要开发在聚合物带基底上的连续薄膜涂覆系统。对向靶溅射（FTS）系统在沉积薄膜方面具有许多优点，如在低工作气压下无需等离子体轰击即可实现高速薄膜沉积。本研究开发了具有角色涂层系统的FTS系统。该设备工作在Ar气压力低至0.1mTorr的条件下，这是常规溅射系统无法工作的。在1000 A/min的高沉积速率下，可以制备出c轴取向良好的Co-Cr薄膜，而不会产生任何热变形。沉积薄膜的内应力随工作气压的变化而变化，在0.5mTorr左右的气压下沉积薄膜的内应力为零。从摩擦学研究的角度来看，这种无应力薄膜对于柔性记录介质非常好。已经制备了由200厚的Co-Cr层和50厚的碳层构成的多层膜，以便构造仅具有细颗粒的膜。结果表明，仅由Co-Cr层构成的多层结构成为控制垂直取向的方法之一。研究还表明，在角色涂层系统中，两步沉积方法是非常有用的，以避免结晶度的下降和大的c轴倾斜角发生在沉积区域的边缘部分。本文研究了用垂直入射的沉积粒子构成的厚度仅为100埃的初始层。这一结果意味着FTS系统可以在不降低沉积速率的情况下实现超高速率沉积。