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Development of soft magnetic thin films with large saturation magnetization for magnetic recording head by sputter-deposition at liquid nitrogen temperature

Development of soft magnetic thin films with large saturation magnetization for magnetic recording head by sputter-deposition at liquid nitrogen temperature
液氮温度下溅射沉积磁记录头用大饱和磁化强度软磁薄膜的研制
批准号:
13650357
负责人:
HOSHI Yoichi
金额:
$0.64万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2003

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中文摘要
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英文摘要
In this research, we proposed several kinds of new sputter-deposition techniques to improve soft magnetic properties of Fe, Fe-N, and Fe-Co thin films with large saturation magnetization above 2.2T.1) Deposition of the film at liquid nitrogen temperatureIt was found that the reduction of the substrate temperature from room temperature to liquid nitrogen temperature leads to a remarkable improvement in the (110) orientation of pure iron films. In addition, ion bombardment at such low temperature can reduce the crystallite size of the films significantly, which results in a remarkable improvement of soft magnetic properties of the film.2) Low voltage sputtering techniqueThe reduction of sputtering voltage is thought to be effective to suppress the high energy particle bombardment of the film, which will lead to an improvement of the crystallinity of the film. In this study, we showed that the sputtering at a low sputtering voltage below 100V and a large plasma density above 10^<11>cm^<-3 … More > can be realized by using rf-dc coupled sputtering technique, although rf frequency of above 50MHz was necessary to produce a high density plasma at low self bias voltage below 100V. Sputter-deposition of pure iron and Fe-Co films were attempted by using this low voltage sputtering system. As a result, it became clear that the orientation of the film is improved by the reduction of sputtering voltages, along with the reduction of compressive film stress. The significant improvement of soft magnetic properties of the film, however, was not observed by the reduction of the sputtering voltage.3) Pulse sputtering techniqueIn the sputtering at a very high plasma density, instability of the glow discharge due to arc discharge was an important problem to be solved. In this study, we used a dc pulse power source of 10 to 100kHz to suppress the instability and showed its effectiveness in the sputter deposition of the films. This pulse sputtering technique was also useful in the reactive sputtering of TiO_2,films, where instability of the discharge was more significant.4) Dual sputtering technique with facing target arrangementWe proposed a new dual sputtering technique with facing target arrangement. In this sputtering system, two magnetron sputtering sources were arranged in an opposed position. Compared with the conventional dual sputtering system, sputter-deposition can be performed at lower sputtering voltages, and high energy particle bombardment to film surface can be reduced markedly.5) Improvement of soft magnetic properties of Fe-Co films deposited on under layerWe confirmed that the crystallite size of the Fe-Co film was decreased significantly by depositing the films on permalloy under layer, which may result in the improvement of soft magnetic properties of the film. Permalloy under layer deposited on Ta seed layer led to a significant improvement of (110) orientation of Fe-Co films along with the reduction of the crystallite size of the film. Less
期刊论文(8)
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会议论文
High rate sputter-deposition of TiO_2 films using oxide target, IEICE,(2004)
使用氧化物靶材高速溅射沉积 TiO_2 薄膜,IEICE,(2004)
DOI: --
发表时间: 2004
期刊: IEICE Trans.Electronics 87-C, No.2
影响因子: --
作者: [Y.Hoshi, T.Takahashi]
通讯作者: T.Takahashi
DOI: --
发表时间: 2003
期刊: Trans.of the Materials Research Society of Japan 28[4]
影响因子: --
作者: [Y.Kon, Y.Hoshi]
通讯作者: Y.Hoshi
DOI: --
发表时间: 2004
期刊: IEICE Trans.Electronics 87-C, No.2
影响因子: --
作者: [Y.Hoshi, H.Shimizu]
通讯作者: H.Shimizu
DOI: --
发表时间: 2002
期刊: IEEJ Trans.FM Vol.122,No.8
影响因子: --
作者: [H.Shimizu, Y.Hoshi, S.Kawabata]
通讯作者: S.Kawabata
8
    Development of high rate glancing angle deposition techniques with oxygen radical source for the fabrication of titanium oxide films with excellent photo-catalytic properties
    • 批准号:
      15K04682
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.16万
    • 财政年份:
      2015
    • 负责人:
      HOSHI Yoichi
    • 依托单位:
    Development of high rate and low temperature sputter-deposition method for the fabrication of oxide films on organic substrate
    • 批准号:
      20560309
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.16万
    • 财政年份:
      2008
    • 负责人:
      HOSHI Yoichi
    • 依托单位:
    Development of high rate sputtering system for the deposition of transparent conductive thin films with low resistivity and high adhesion on plastic film substrate.
    • 批准号:
      16560281
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.37万
    • 财政年份:
      2004
    • 负责人:
      HOSHI Yoichi
    • 依托单位:
    Development of sputter deposition method to control microstructure of thin film magnetic recording media with ultra high density.
    • 批准号:
      10650320
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.24万
    • 财政年份:
      1998
    • 负责人:
      HOSHI Yoichi
    • 依托单位:
    海外基金