Development of soft magnetic thin films with large saturation magnetization for magnetic recording head by sputter-deposition at liquid nitrogen temperature

液氮温度下溅射沉积磁记录头用大饱和磁化强度软磁薄膜的研制

基本信息

  • 批准号:
    13650357
  • 负责人:
  • 金额:
    $ 0.64万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2001
  • 资助国家:
    日本
  • 起止时间:
    2001 至 2003
  • 项目状态:
    已结题

项目摘要

In this research, we proposed several kinds of new sputter-deposition techniques to improve soft magnetic properties of Fe, Fe-N, and Fe-Co thin films with large saturation magnetization above 2.2T.1) Deposition of the film at liquid nitrogen temperatureIt was found that the reduction of the substrate temperature from room temperature to liquid nitrogen temperature leads to a remarkable improvement in the (110) orientation of pure iron films. In addition, ion bombardment at such low temperature can reduce the crystallite size of the films significantly, which results in a remarkable improvement of soft magnetic properties of the film.2) Low voltage sputtering techniqueThe reduction of sputtering voltage is thought to be effective to suppress the high energy particle bombardment of the film, which will lead to an improvement of the crystallinity of the film. In this study, we showed that the sputtering at a low sputtering voltage below 100V and a large plasma density above 10^<11>cm^<-3 … More > can be realized by using rf-dc coupled sputtering technique, although rf frequency of above 50MHz was necessary to produce a high density plasma at low self bias voltage below 100V. Sputter-deposition of pure iron and Fe-Co films were attempted by using this low voltage sputtering system. As a result, it became clear that the orientation of the film is improved by the reduction of sputtering voltages, along with the reduction of compressive film stress. The significant improvement of soft magnetic properties of the film, however, was not observed by the reduction of the sputtering voltage.3) Pulse sputtering techniqueIn the sputtering at a very high plasma density, instability of the glow discharge due to arc discharge was an important problem to be solved. In this study, we used a dc pulse power source of 10 to 100kHz to suppress the instability and showed its effectiveness in the sputter deposition of the films. This pulse sputtering technique was also useful in the reactive sputtering of TiO_2,films, where instability of the discharge was more significant.4) Dual sputtering technique with facing target arrangementWe proposed a new dual sputtering technique with facing target arrangement. In this sputtering system, two magnetron sputtering sources were arranged in an opposed position. Compared with the conventional dual sputtering system, sputter-deposition can be performed at lower sputtering voltages, and high energy particle bombardment to film surface can be reduced markedly.5) Improvement of soft magnetic properties of Fe-Co films deposited on under layerWe confirmed that the crystallite size of the Fe-Co film was decreased significantly by depositing the films on permalloy under layer, which may result in the improvement of soft magnetic properties of the film. Permalloy under layer deposited on Ta seed layer led to a significant improvement of (110) orientation of Fe-Co films along with the reduction of the crystallite size of the film. Less
在这项研究中,我们提出了几种新的溅射沉积技术,以提高Fe, Fe- n和Fe- co薄膜的软磁性能,这些薄膜具有2.2T以上的大饱和磁化强度。1)在液氮温度下沉积薄膜研究发现,将衬底温度从室温降低到液氮温度,可以显著改善纯铁薄膜的(110)取向。此外,在这种低温下离子轰击可以显著减小薄膜的晶粒尺寸,从而使薄膜的软磁性能得到显著改善。2)低压溅射技术溅射电压的降低被认为可以有效地抑制高能粒子对薄膜的轰击,从而提高薄膜的结晶度。在本研究中,我们证明了在低于100V的低溅射电压下的溅射和10^<11>cm^<-3…的大等离子体密度可以通过rf-dc耦合溅射技术实现,尽管在低于100V的低自偏置电压下产生高密度等离子体需要高于50MHz的rf频率。利用该低压溅射系统,尝试了纯铁和铁钴薄膜的溅射沉积。结果表明,随着溅射电压的降低和薄膜压应力的减小,薄膜的取向得到了改善。然而,溅射电压的降低并没有显著改善薄膜的软磁性能。脉冲溅射技术在非常高等离子体密度的溅射中,电弧放电引起的辉光放电不稳定是需要解决的一个重要问题。在本研究中,我们使用了10 ~ 100kHz的直流脉冲电源来抑制不稳定性,并在溅射沉积薄膜中显示了它的有效性。这种脉冲溅射技术也适用于TiO_2薄膜的反应溅射,其中放电的不稳定性更为显著。4)面靶双溅射技术提出了一种新的面靶双溅射技术。在该溅射系统中,两个磁控溅射源以相对位置布置。与传统的双溅射系统相比,可以在较低的溅射电压下进行溅射沉积,并且可以显著减少高能粒子对薄膜表面的轰击。5)层下沉积Fe-Co薄膜的软磁性能的改善我们证实,层下沉积在坡莫合金上的Fe-Co薄膜的晶粒尺寸明显减小,这可能导致薄膜软磁性能的改善。沉积在Ta种层上的Permalloy使Fe-Co薄膜的(110)取向得到显著改善,同时薄膜的晶粒尺寸减小。少

项目成果

期刊论文数量(8)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
High rate sputter-deposition of TiO_2 films using oxide target, IEICE,(2004)
使用氧化物靶材高速溅射沉积 TiO_2 薄膜,IEICE,(2004)
Iron Thin Films Deposited by Low Voltage Sputtering
低压溅射沉积铁薄膜
Low temperature deposition of ITO thin films by low voltage sputtering in various rare gases
各种稀有气体中低压溅射低温沉积ITO薄膜
The consideration on the Initial Growth stage of Sputtered Ag Thin Films Observed by Ellipsometry.
椭偏仪观测溅射银薄膜初始生长阶段的思考。
  • DOI:
  • 发表时间:
    2002
  • 期刊:
  • 影响因子:
    0
  • 作者:
    H.Shimizu;Y.Hoshi;S.Kawabata
  • 通讯作者:
    S.Kawabata
偏光解析法を用いたAgスパッタ薄膜の初期成長過程の考察
使用椭圆光度法考虑银溅射薄膜的初始生长过程
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HOSHI Yoichi其他文献

HOSHI Yoichi的其他文献

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{{ truncateString('HOSHI Yoichi', 18)}}的其他基金

Development of high rate glancing angle deposition techniques with oxygen radical source for the fabrication of titanium oxide films with excellent photo-catalytic properties
开发氧自由基源高速掠射角沉积技术,用于制备具有优异光催化性能的氧化钛薄膜
  • 批准号:
    15K04682
  • 财政年份:
    2015
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of high rate and low temperature sputter-deposition method for the fabrication of oxide films on organic substrate
开发在有机基底上制备氧化膜的高速低温溅射沉积方法
  • 批准号:
    20560309
  • 财政年份:
    2008
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of high rate sputtering system for the deposition of transparent conductive thin films with low resistivity and high adhesion on plastic film substrate.
开发高速率溅射系统,用于在塑料薄膜基材上沉积低电阻率和高附着力的透明导电薄膜。
  • 批准号:
    16560281
  • 财政年份:
    2004
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of sputter deposition method to control microstructure of thin film magnetic recording media with ultra high density.
开发溅射沉积方法来控制超高密度薄膜磁记录介质的微观结构。
  • 批准号:
    10650320
  • 财政年份:
    1998
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of hightly oriented and low noise barium ferrite thin film media for high density magnetic recording
用于高密度磁记录的高取向、低噪声钡铁氧体薄膜介质的开发
  • 批准号:
    06650374
  • 财政年份:
    1994
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Deposition of Iron Nitride Films with Large Saturation Magnetization by Using a Sputtering Type Plasma Source.
使用溅射型等离子体源沉积具有大饱和磁化强度的氮化铁薄膜。
  • 批准号:
    04650272
  • 财政年份:
    1992
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Deposition of Iron Nitride Soft Magnetic Thin Films with Giant Saturation Magnetization by Sputtering type Plasma Source
溅射式等离子体源沉积大饱和磁化氮化铁软磁薄膜
  • 批准号:
    02650229
  • 财政年份:
    1990
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Development of Sputtering Type Large Current Ion Source and its Application for the Synthesis of Superconducting Oxide thin Films.
溅射式大电流离子源的研制及其在超导氧化物薄膜合成中的应用。
  • 批准号:
    01850065
  • 财政年份:
    1989
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

相似海外基金

Development of high frequency soft magnetic thin films consisting of ferromagnetic alloy/ferromagnetic insulator multi-phase granular materials
铁磁合金/铁磁绝缘体多相颗粒材料高频软磁薄膜的研制
  • 批准号:
    07555211
  • 财政年份:
    1995
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Soft Magnetic Thin Films Composed of Ultra Fine Crystallites
由超细晶组成的软磁薄膜
  • 批准号:
    03555152
  • 财政年份:
    1991
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Deposition of Iron Nitride Soft Magnetic Thin Films with Giant Saturation Magnetization by Sputtering type Plasma Source
溅射式等离子体源沉积大饱和磁化氮化铁软磁薄膜
  • 批准号:
    02650229
  • 财政年份:
    1990
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
A study of the soft magnetic thin films with super lattice structure for the high density recording head use
高密度记录头用超晶格结构软磁薄膜的研究
  • 批准号:
    60550222
  • 财政年份:
    1985
  • 资助金额:
    $ 0.64万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
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