Ion tracks as electrically conducting nanowires
作为导电纳米线的离子轨迹
基本信息
- 批准号:206649505
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:德国
- 项目类别:Research Grants
- 财政年份:2012
- 资助国家:德国
- 起止时间:2011-12-31 至 2015-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Ion tracks in matter are generated during irradiation with swift heavy ions by high and very local electronic energy loss. The structural changes induced in this way often yield to amorphous tracks or defect enriched latent tracks. In very few cases one finds a local phase transformation form an electrically insulating to a conductive phase. This is the case for tetrahedral amorphous carbon (ta-C) which locally converts to a sp2 bonded conductive phase upon irradiation with e.g. GeV 238U ions. The diameter of the conducting tracks is only 8 nm. Thus, conducting ion tracks possess the potential to realize novel nanoscale electronic devices. It seems that beside ta-C other materials like VO2 , rare earth nickelates and Fe3O4, which undergo an insulator-metal transition as function of temperature, are also suited to generate conducting ion tracks. Such systems may be of interest for all-oxide electronic devices and because of their thermoelectric behaviour. The aim of the proposal is to tailor the track conductivity in ta-C towards high and uniform conductivity with Ohmic conduction. This shall be achieved by doping of the ta-C matrix with suited metal atoms and also by ion irradiation with high charge state ions (high energy loss). Furthermore, the formation, the microstructure and the properties of conducting ion tracks in VO2 thin films shall be investigated. The potential of ion track electronics shall be studied for interrupted tracks, prepared by irradiating layered film structures of ta-C and insulating BN spacer layers. In this way conducting ion tracks provide the contacts to a small volume of few nm3 in size which may exhibit Coulomb blockade effects even at room temperature.
物质中的离子轨迹是在快速重离子照射过程中,通过高的和非常局部的电子能量损失而产生的。以这种方式引起的结构变化通常产生非晶径迹或缺陷富集的潜在径迹。在极少数情况下,人们发现局部相变从电绝缘相转变为导电相。这是四面体无定形碳(ta-C)的情况,它在受到例如GeV 238U离子照射后局部转化为sp2键合导电相。导电轨道的直径仅为8纳米。因此,导电离子轨道具有实现新型纳米级电子器件的潜力。除了ta-C,其他材料,如VO2、稀土镍酸盐和Fe3O4,它们随着温度的变化经历绝缘体-金属的转变,似乎也适合产生导电离子轨道。由于其热电特性,这种系统可能对全氧化物电子器件感兴趣。该提案的目的是将ta-C中的轨道电导率调整为具有高和均匀电导率的欧姆传导。这可以通过用合适的金属原子掺杂ta-C基体以及用高电荷态离子(高能量损失)进行离子照射来实现。进一步研究了VO2薄膜中导电离子轨迹的形成、微观结构和性能。通过辐照ta-C层状膜结构和绝缘BN间隔层制备的中断轨道,研究离子轨道电子学的电位。通过这种方式,导电离子轨迹提供了几立方厘米大小的小体积的接触,即使在室温下也可能表现出库仑封锁效应。
项目成果
期刊论文数量(6)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Nano-hillock formation in diamond-like carbon induced by swift heavy projectiles in the electronic stopping regime: Experiments and atomistic simulations
- DOI:10.1063/1.4752455
- 发表时间:2012-09
- 期刊:
- 影响因子:4
- 作者:D. Schwen;E. Bringa;J. Krauser;A. Weidinger;C. Trautmann;H. Hofsäss
- 通讯作者:D. Schwen;E. Bringa;J. Krauser;A. Weidinger;C. Trautmann;H. Hofsäss
Conducting ion tracks generated by charge-selected swift heavy ions
由电荷选择的快重离子产生的导电离子轨迹
- DOI:10.1016/j.nimb.2016.05.010
- 发表时间:2016
- 期刊:
- 影响因子:1.3
- 作者:Gehrke;Krauser;Trautmann;Severin;Bender;Rothard;Hofsäss
- 通讯作者:Hofsäss
Conductive tracks of 30-MeV C60 clusters in doped and undoped tetrahedral amorphous carbon
掺杂和未掺杂四面体非晶碳中 30-MeV C60 团簇的导电轨迹
- DOI:10.1016/j.nimb.2012.12.081
- 发表时间:2013
- 期刊:
- 影响因子:1.3
- 作者:Krauser;Gehrke;Hofsäss;Trautmann;Weidinger
- 通讯作者:Weidinger
Analysis of Immittance Spectra: Finding Unambiguous Electrical Equivalent Circuits to Represent the Underlying Physics
导抗谱分析:寻找明确的电气等效电路来表示基础物理
- DOI:10.1103/physrevapplied.4.044007
- 发表时间:2015
- 期刊:
- 影响因子:4.6
- 作者:J. A. Amani;T. Koppe;H. Hofsäss;U. Vetter
- 通讯作者:U. Vetter
Electrical conduction of ion tracks in tetrahedral amorphous carbon: temperature, field and doping dependence and comparison with matrix data
四面体非晶碳中离子轨迹的电传导:温度、场和掺杂依赖性以及与矩阵数据的比较
- DOI:10.1088/1367-2630/17/12/123009
- 发表时间:2015
- 期刊:
- 影响因子:3.3
- 作者:Krauser;Gehrke;H.-G.Hofsäss;Trautmann;Weidinger
- 通讯作者:Weidinger
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Professor Dr. Hans Christian Hofsäss其他文献
Professor Dr. Hans Christian Hofsäss的其他文献
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{{ truncateString('Professor Dr. Hans Christian Hofsäss', 18)}}的其他基金
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- 资助金额:
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Proton beam writing of three-dimensional semiconductor microstructures
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- 批准号:
268244270 - 财政年份:2015
- 资助金额:
-- - 项目类别:
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Surfactant Sputtering - Investigation of fundamental processes
表面活性剂溅射 - 基本过程研究
- 批准号:
120298999 - 财政年份:2009
- 资助金额:
-- - 项目类别:
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Temperatur- und druckabhängige PAC-Messungen zur Charakterisierung der Mikrostruktur in MAX-Phasen
温度和压力相关的 PAC 测量可表征 MAX 相的微观结构
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111369424 - 财政年份:2009
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Feldemission auf der Basis von leitenden Ionenspuren
基于传导离子径迹的场发射
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35737332 - 财政年份:2007
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Research Grants
Selbstorganisiertes Wachstum nanoskaliger Multilagenschichten bei der Kodeposition niederenergetischer Metall- und Kohlenstoffionen
低能金属和碳离子共沉积过程中纳米级多层薄膜的自组织生长
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25801390 - 财政年份:2006
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Synthese, Struktur und Eigenschaften von fluorhaltigem tetraedrisch gebundenen amorphen Kohlenstoff
含氟四面体非晶碳的合成、结构与性能
- 批准号:
5169244 - 财政年份:1999
- 资助金额:
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