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Selective Reaction Control of CVD Process by a New Discharge Technique

新型放电技术对CVD过程的选择性反应控制

基本信息

批准号：
01460117
负责人：
OKAZAKI Ken
金额：
$ 4.61万
依托单位：
Toyohashi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1991
项目状态：
已结题

项目摘要

An ultra-short and high-voltage pulse discharge plasma has been studied focusing on the control of its structure as a promising technology for the active control of radical reactions in the plasma CVD processing, and the following conclusions have been obtained.1. Stable and uniform plasmas have been successfully established by the ultra-short and high-voltage pulse discharge plasma at very high applied voltages up to several kilovolts without any plasma non-uniformity on the electrode or substrate surface.2. The conditions or criteria to sustain the ultra-short pulse plasma have been clarified. The lag time of current rise from that of voltage increases with the decrease of applied voltage and if it reaches the value of pulse width the initiation of plasma becomes impossible.3. Several peculiar features of the ultra-short and high-voltage pulse plasma have been clarified including voltage-current characteristics at very high power regions, lag times of current rise and effects of pressure and pulse width, and radical emission intensity profiles between anode and cathode.4. The high-power and ultra-short pulse plasma has a well-defined stratified structure consisting of a luminous zone similar to a well-known positive column near the anode and a dark space near the cathode and this structure can be well controlled only by the parameters of pressure, applied voltage and distance between anode and cathode.5. Active control of radical reactions and ion energies in the plasma CVD processing could be possible by applying the new technique developed in this study.

本文对超短高压脉冲放电等离子体进行了研究，重点研究了超短高压脉冲放电等离子体的结构控制，并得到了以下结论.利用超短脉冲高压放电等离子体，在高达几千伏的极高电压下成功地建立了稳定均匀的等离子体，在电极或基片表面没有任何等离子体不均匀性.阐明了维持超短脉冲等离子体的条件或判据。随着外加电压的减小，电流上升滞后于电压上升的时间增加，当滞后时间达到脉冲宽度时，等离子体的引发将变得不可能.阐明了超短高压脉冲等离子体的几个特殊特性，包括极高功率区的电压-电流特性、电流上升的滞后时间、压力和脉宽的影响以及正负极间的自由基发射强度分布.高功率超短脉冲等离子体具有明确的分层结构，由阳极附近的发光区和阴极附近的暗区组成，该发光区类似于众所周知的正柱，这种结构只能通过压力、外加电压和阴阳极之间的距离等参数来很好地控制.在等离子体CVD工艺中的自由基反应和离子能量的主动控制可以通过应用在这项研究中开发的新技术。