Control of the arrangement of native vacancies and optical in III-VI compound semiconductors

III-VI族化合物半导体中原生空位和光学排列的控制

• 批准号: 04452088
• 负责人: KONAGAI Makoto
• 金额: $ 3.78万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452088/
• 关键词: III-VI compound semiconductors; Gallium selenide; Defect zincblende structure; Vacancy ordering; Optical anisotropy; 層状構造

We have investigated the structural and optical propetries of Ga_2Se_3 films on (100) GaP and (100) GaAs substrates prepared by molecular beamepitaxy (MBE), and obtained following results ;The electron diffraction studies and Raman studies revealed that the superstructure was predominantly formed in the [011] direction by the sponataneous of native gallium vacancies in the defect zincblende structure under the seleniumdirection by the spontaneous ordering of native gallium vacancies in the defect zincblende structre under the seleniumrich conditionVery large absorption anisotropy (a>10^4cm^<-1>) was observed in the vacaucy-ordered Ga_2Se_3 at the wavelength of around 525nm. The absorption coefficient in [011] polarization is larger than that in [011] in a range of 480 to 580nm. Therefore, the vacancy-ordered Ga_2Se_3 behaves like a polarizer in the selected wavelength wavelength range. On the contrary, the optical absorption in the disordered Ga_2Se_3 was isotropic, which suggests that … More the absorption anisotropy is attributed to the vacancy orderingFrom the polarization dependence of the reflection spectra, it was found that the reflective index in [011] polarization is larger than that for [011] in the vacaucy-ordered Ga_2Se_3In the photoluminescence (PL) measurement at low temperature, a broad emission peak centered at around 610nm was observed in the vacaucy-ordered Ga_2Se_3. Furthermore, the intensity of the [011] polarization component was much stronger than that of [011] polarization in the vacancy-ordered Ga_2Se_3. This result indicates that the electron transition probability for [011] polarization is larger than that for [011] polarization in vacancy-ordered Ga_2Se_3, and corresponds to the large absorption coefficient for [011] polarization. On the other hand, in the disordered Ga_2Se_3, PL intensity was extremely weak, and deep level emissions centered at around 750 and 900nm were dominantFrom these results, we consider that the vacaucy-ordered Ga_2Se_3 has great potential as a new material for optoelectronic devices Less

我们研究了分子束外延(MBE)在(100)GaP和(100)GaAs衬底上生长的Ga_2Se_3薄膜的结构和光学性质，得到了以下结果：电子衍射和拉曼光谱研究表明，在富硒条件下，在真空有序的Ga_2Se_3晶体中，在525 nm附近观察到非常大的吸收各向异性(a&gt；10^4 cm~(-1)；-1&gt；)，这种超结构主要是由缺陷闪锌矿结构中的自然镓空位自发形成的。在480~580 nm范围内，[011]偏振时的吸收系数大于[011]时的吸收系数。因此，空位有序的Ga2Se_3在选定的波长范围内表现为偏振器的行为。相反，无序Ga2Se_3的光吸收是各向同性的，这表明…吸收各向异性更多地归因于空位有序。从反射光谱的偏振相关性发现，在真空有序的Ga_2Se_3中，[011]偏振态的反射率大于[011]。在低温光致发光(PL)测量中，在真空有序的Ga_2Se_3中观察到一个位于610 nm附近的宽发射峰。此外，还发现，在真空有序的Ga_2Se_3中有一个中心位于610 nm附近的宽发射峰。在空位有序的Ga2Se_3中，[011]极化分量的强度远大于[011]极化的强度。这一结果表明，在空位有序的Ga2Se_3中，[011]极化的电子跃迁几率大于[011]极化的电子跃迁几率，这与[011]极化的大吸收系数相对应。另一方面，在无序的Ga_2Se_3中，发光强度非常弱，并且以750 nm和900 nm附近的深能级发射为主。从这些结果来看，真空有序的Ga_2Se_3在光电子器件领域具有很大的潜力

项目成果

Tamotsu Okamoto: "Characterization of the Interface between Ga_2Se_3 Epitaxial Layr and (100) GaP Substrate by Transmission Electron Microscopy" Proc. 1st International Symposium on Control of Semiconductor Interfaces. (in press). (1993)

Tamotsu Okamoto：“通过透射电子显微镜表征 Ga_2Se_3 外延层和 (100) GaP 衬底之间的界面”Proc。

Akira Yamada: "MBE Growth of Ga_2Se_3 and GaSe and Their Optical Properties" Proc.State-of-the Art Program on Compound Semiconductors XVIII. (in press). (1993)

Akira Yamada：“Ga_2Se_3 和 GaSe 的 MBE 生长及其光学性质”Proc.化合物半导体最先进计划 XVIII。

Tamotsu Okamoto: "Characterization of the Interface between Ga_2Se_3 Epitaxial Layer and (100)GaP Substrate by Transmission Electron Microscopy" Proc.1st International Symposium on Control of Semiconductor Interfaces. (in press). (1993)

Tamotsu Okamoto：“通过透射电子显微镜表征 Ga_2Se_3 外延层和 (100)GaP 衬底之间的界面”Proc.1st 国际半导体界面控制研讨会。

Nobuaki Kojima: "Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy" Jpn.J.Appl.Phys.32. L887-L889 (1993)

Nobuaki Kojima：“通过分子束外延生长的外延 Ga_2Se_3 的光致氧化”Jpn.J.Appl.Phys.32。

Tamotsu Okamoto: "Optical Anisotropy of Vacancy-Ordered Ga_2Se_3 Grown by Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 31. L143-L144 (1992)

Tamotsu Okamoto：“分子束外延生长的空位有序 Ga_2Se_3 的光学各向异性”日本应用物理学杂志。