Study of Nitrogen Doping of ZnSe by Catalysis of Transition Metals

基于ZnSe的光学器件的最新发展很大程度上归功于用氮射频等离子体源制备的p型ZnSe。在等离子体过程中，氮的掺杂是通过活性氮来实现的。在本研究中，我们提出了在MBE生长ZnSe的过程中，利用过渡金属离解吸附N_2（催化反应）作为一种新的氮掺杂技术来代替射频等离子体。首先，我们研究了高温钨丝对氮掺杂ZnSe的影响。当W丝加热到1300℃以上时，在掺n ZnSe薄膜的PL光谱中可以明显地观察到DAP的发射，表明在加热钨的作用下，氮被有效地掺入ZnSe中。然而，掺n的ZnSe薄膜表现出较高的电阻率。此外，我们还研究了加热Fe对ZnSe的影响，发现在300℃的温度下，Fe可以有效地将氮引入ZnSe中。然而，掺n的ZnSe薄膜表现出较高的电阻率。

Recent developments in ZnSe-based optical devices greatly owe to p-type ZnSe prepared with a nitrogen RF plasma source. In the plasma process, doping of nitrogen is achieved by an active nitrogen. In this study, we proposed the use of dissociative adsorption of N_2 on transition metals (catalytic reaction) as a new nitrogen doping technique during MBE growth of ZnSe instead of using RF plasma.First, we investigated the effect of high-temperature tungsten (W) filament on nitrogen doping of ZnSe. In the PL spectra of N-doped ZnSe films with heating the W filament above 1300ﾟC,DAP emission was clearly observed, showing that nitrogen was effectively incorporated into ZnSe by the effect of the heated tungsten. However, the N-doped ZnSe films exhibited high resistivity.Furthemore, we investigated the effect of heated Fe and it was found that nitrogen was effectively incorporated into ZnSe by the effect of the heated Fe at 300ﾟC.However, the N-doped ZnSe films exhibited high resistivity.