Study of Nitrogen Doping of ZnSe by Catalysis of Transition Metals

ZnSe基光学器件的最新发展主要归功于用氮RF等离子体源制备的p型ZnSe。在等离子体工艺中，通过活性氮实现氮的掺杂。本研究提出了一种利用N_2在过渡金属上的解离吸附（催化反应）代替射频等离子体作为ZnSe分子束外延生长中氮掺杂的新技术。首先，我们研究了高温钨丝对ZnSe氮掺杂的影响。在将W灯丝加热到1300 ° C以上的情况下，在N掺杂的ZnSe薄膜的PL光谱中，清楚地观察到DAP发射，这表明通过加热的钨的作用，氮被有效地掺入到ZnSe中。进一步研究了加热Fe的影响，发现在300 ℃加热Fe的作用下，氮被有效地引入到ZnSe中，而N掺杂的ZnSe薄膜却表现出高的电阻率。

Recent developments in ZnSe-based optical devices greatly owe to p-type ZnSe prepared with a nitrogen RF plasma source. In the plasma process, doping of nitrogen is achieved by an active nitrogen. In this study, we proposed the use of dissociative adsorption of N_2 on transition metals (catalytic reaction) as a new nitrogen doping technique during MBE growth of ZnSe instead of using RF plasma.First, we investigated the effect of high-temperature tungsten (W) filament on nitrogen doping of ZnSe. In the PL spectra of N-doped ZnSe films with heating the W filament above 1300ﾟC,DAP emission was clearly observed, showing that nitrogen was effectively incorporated into ZnSe by the effect of the heated tungsten. However, the N-doped ZnSe films exhibited high resistivity.Furthemore, we investigated the effect of heated Fe and it was found that nitrogen was effectively incorporated into ZnSe by the effect of the heated Fe at 300ﾟC.However, the N-doped ZnSe films exhibited high resistivity.