Study of Nitrogen Doping of ZnSe by Catalysis of Transition Metals

过渡金属催化ZnSe氮掺杂研究

• 批准号: 06452109
• 负责人: KONAGAI Makoto
• 金额: $ 4.35万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452109/
• 关键词: II-VI compound semiconductors; ZnSe; molecular beam epitaxy; nitrogen doping; ZnSe; 触媒

Recent developments in ZnSe-based optical devices greatly owe to p-type ZnSe prepared with a nitrogen RF plasma source. In the plasma process, doping of nitrogen is achieved by an active nitrogen. In this study, we proposed the use of dissociative adsorption of N_2 on transition metals (catalytic reaction) as a new nitrogen doping technique during MBE growth of ZnSe instead of using RF plasma.First, we investigated the effect of high-temperature tungsten (W) filament on nitrogen doping of ZnSe. In the PL spectra of N-doped ZnSe films with heating the W filament above 1300ﾟC,DAP emission was clearly observed, showing that nitrogen was effectively incorporated into ZnSe by the effect of the heated tungsten. However, the N-doped ZnSe films exhibited high resistivity.Furthemore, we investigated the effect of heated Fe and it was found that nitrogen was effectively incorporated into ZnSe by the effect of the heated Fe at 300ﾟC.However, the N-doped ZnSe films exhibited high resistivity.

硒化锌基光学器件的最新发展很大程度上归功于用氮射频等离子体源制备的 p 型硒化锌。在等离子体工艺中，氮的掺杂是通过活性氮来实现的。在这项研究中，我们提出在ZnSe的MBE生长过程中使用N_2在过渡金属上的解离吸附（催化反应）作为一种新的氮掺杂技术，而不是使用RF等离子体。首先，我们研究了高温钨（W）丝对ZnSe氮掺杂的影响。在将钨灯丝加热到1300℃以上的N掺杂ZnSe薄膜的PL光谱中，可以清楚地观察到DAP发射，表明氮在加热的钨的作用下有效地结合到ZnSe中。然而，N掺杂的ZnSe薄膜表现出高电阻率。此外，我们研究了加热Fe的影响，发现在300℃下加热Fe的作用下，氮有效地结合到ZnSe中。然而，N掺杂ZnSe薄膜表现出高电阻率。

项目成果

Tamotsu Okamoto: "Nitrogen Doping of ZnSe by Using High-Temperature Tungsten Filament" Proc. Intern. Symp. Blue Laser and Light Emitting Diodes. (in press). (1996)

Tamotsu Okamoto：“利用高温钨丝对 ZnSe 进行氮掺杂”Proc。

Hideki Tojima: "Nitrogen Doping into ZnSe by the Catalysis of Transition Metal" J. Crystal Growth. 138. 408-411 (1994)

Hideki Tojima：“通过过渡金属的催化将氮掺杂到 ZnSe 中”J. 晶体生长。

Hideki Tojima: "Nitrogen doping into ZnSe by the catalysis of transition metal" Journal of Crystal Growth. 138. 408-411 (1994)

Hideki Tojima：“通过过渡金属的催化将氮掺杂到 ZnSe 中”《晶体生长杂志》。

Hideki Tojima: "Nitrogen Doping into ZnSe by the Catalysis of Transition Metal" J.Crystal Growth. 138. 408-411 (1994)

Hideki Tojima：“通过过渡金属的催化将氮掺杂到 ZnSe 中”J.Crystal Growth。

Tamotsu Okamoto: "Nitrogen Doping into ZnSe by Using High-Temperature Tungsten Filament" Proc.Intern.Symp.Blue Lascr and Light Emitting Diodes. (in press). (1996)

Tamotsu Okamoto：“使用高温钨丝将氮掺杂到 ZnSe 中”Proc.Intern.Symp.Blue Lascr 和发光二极管。