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Position control of InAs quantum dots by using AFM oxidation method and application to single electron transistor

AFM氧化法InAs量子点位置控制及其在单电子晶体管中的应用

基本信息

批准号：
13450124
负责人：
KONAGAI Makoto
金额：
$ 7.49万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

项目摘要

In recent years the Research, which is going to develop the quantum effect, devices, such as single electronic transistors (SETs), is actively made by improvement in semiconductor ultra-fine processing technology. The specific "self-organization" phenomenon which carries out self-formation of the detailed structure very much attracts attention by distortion by the difference in the lattice constant of a material composition atom in recent years as processing technology which complements the ultra-fine processing technology using the ion beam, the electronic beam, etc. as a means to produce those devices.However, InAs quantum dots (QDs) has indispensable position contrl of each dots which carried out self-organization growth, in order for a large number to grow at rapdom, and apply to a single electron device. Then, in this research, it gazed at the application to a single electron device, and the technique of performing anode oxidization using the atomic force microscope (AFM) which we have developed by present was used.First, InAs QDs were grown up by using molecular beam epitaxy (MBE) method, and QD's density is decreased and migration was tried. Decreased density was raised by 40 degrees to 70 degrees from the substrate temperature in the state where the InAs QDs was grown up. It has figured out that decreased density, when the QDs migrated theoretically and dots join together or evaporated.Next, position control of InAs QDs were tried by performing detailed processing on a GaAs substrate by using the AFM oxidation, producing a nano-template, growing up InAs QDs and carrying out in-situ annealing on it.Consequently, the phenomenon which an InAs quantum dot moves to the nano-hole which migrated by in-situ annealing, and which was processed by the AFM oxidation has been figured out.

近年来，随着半导体超精细加工技术的发展，半导体单电子晶体管(SETS)等器件正积极地发展量子效应的研究。近年来，通过材料组成原子晶格常数的差异进行自组织形成的特殊的“自组织”现象引起了人们的极大关注，作为利用离子束、电子束等作为制造这些器件的手段的超精细加工技术的补充。然而，InAs量子点(QD)对进行自组织生长的每个点都有不可或缺的位置控制，以便大量的量子点快速生长，并应用于单个电子器件。然后，在本研究中，着眼于在单电子器件中的应用，使用了我们目前开发的原子力显微镜(AFM)进行阳极氧化的技术。首先，用分子束外延(MBE)方法生长了InAs量子点，降低了量子点的密度，并进行了迁移。在生长InAs量子点的状态下，降低的密度从衬底温度提高了40度到70度。在此基础上，利用原子力显微镜氧化技术对衬底进行精细加工、制备纳米模板、生长InAs量子点并对其进行原位热处理，从而实现了InAs量子点的位置控制，从而解决了InAs量子点向经过AFM氧化处理的纳米空穴移动的现象。