权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Research of Epitaxial Growth and Electrical Analysis of Si-Ge-C Layer

Si-Ge-C层外延生长及电学分析研究

基本信息

批准号：
10450114
负责人：
KONAGAI Makoto
金额：
$ 7.94万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

项目摘要

Lowering process temperature is important to overcome thermal problems such as interdiffusion between doped layers and autodoping effects. Furthermore, such low temperatures are also required for the growth of strained SiGe or other compound semiconductors based on group IV elements. The introduction of such SiGeC-based heteroepitaxial devices open a new field in the Si technologies.We studied the structural properties of SiGe and SiGeC alloys by ab initio total-energy calculations. It is found from these calculations that the Ge cluster is a stable structure in a SiGe alloy. Furthermore, it is also demonstrated that Vegard's law is valid in a SiGeC system whose C content is less than 3%. The total-energy calculation of the Si0.72Ge0.25C0.03 alloy in which the number of Ge-C bonds around a C atom varies shows that the energy increases on increasing the number of Ge-C bonds. The mechanism of this increase is considered, taking into account the cohesive energy difference of the SiC and G … More eC alloys and the atomic configuration around the C atom.We applied Hot Wire (HW) Cell method to low temperature Si epitaxy. The substrate temperature was 200℃. When the pressure was as low as 5x10ィイD1-4ィエD1 Torr, the film structure was amorphous. By optimizing the pressure during the growth, we obtained epitaxial Si films on Si(100) substrate with film thickness of over 400nm at the pressure of 0.015 Torr. The growth rate was about 0.2mn/s. The film structure changed from epitaxial to polycrystalline by increasing the pressure up to 0.1 Torr. In addition, it was found that the hydrogen was incorporated into the epitaxial Si films from IR spectra measurement. There were absorption peaks at 2150 and 2050 cmィイD1-1ィエD1 originating from Si-H related bondings. X-ray diffraction pattern was also measured, and the peak of the epitaxial Si film was shifted to lower degree compared to the peak of substrate. It indicated that the lattice constant was expanded by the hydrogen atoms which made Si-H-Si configuration in the films. This stress caused the critical thickness for epitaxy and it was about 100nm at the pressure of 0.033 Torr. Less

降低工艺温度对于克服诸如掺杂层之间的相互扩散和自掺杂效应之类的热问题是重要的。此外，应变SiGe或基于IV族元素的其它化合物半导体的生长也需要这样的低温。本文采用从头算方法研究了SiGe和SiGeC合金的结构特性。从这些计算中发现，Ge团簇是SiGe合金中的稳定结构。此外，还证明了Vegard定律在C含量小于3%的SiGeC系统中是有效的。其中C原子周围的Ge-C键的数目变化Si0.72Ge0.25C0.03合金的总能量计算表明，能量随着Ge-C键的数目增加而增加。考虑到SiC和G的结合能差异，考虑了这种增加的机制 ...更多信息我们将热线（HW）槽法应用于低温硅外延。衬底温度为200℃。当压力低至5 × 10 ~（-1）D ~（1 -4）D ~（-1）Torr时，薄膜结构为非晶态。通过优化生长气压，在0.015Torr的气压下，在Si（100）衬底上获得了厚度超过400 nm的外延Si薄膜。生长速率约为0.2mn/s。通过增加压力至0.1托，膜结构从外延变为多晶。此外，通过红外光谱测量发现氢被引入到外延硅膜中。在2150和2050 cm-1处有吸收峰，来源于Si-H键。X射线衍射图谱也进行了测量，与衬底的峰相比，外延Si膜的峰向低程度偏移。结果表明，氢原子的存在使薄膜中的晶格常数增大，形成Si-H-Si结构。在0.033Torr的压力下，外延层的临界厚度约为100 nm。少