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Development of Low-Temperature Epitaxy of Silicon by Photo-Chemical Vapor Deposition

光化学气相沉积硅低温外延技术的进展

基本信息

批准号：
62850053
负责人：
KONAGAI Makoto
金额：
$ 3.71万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1988
项目状态：
已结题

项目摘要

The necessary dimension of an epitaxial layer under typical high-temperature processing conditions are limited by the diffusion length of dopants out of the substrate. Therefore, it has become essential to develop low-temperature silicon epitaxy to reduce further the dimensions of high-performance integrated circuitry.With these backgrounds, the purpose of this research has been developments of low-temperature epitaxy of silicon using photo-chemical vapor deposition technique. Using the photo-CVD technique, the growth temperature could be drastically reduced, because the reactant gases are not decomposed thermally but photochemically. We have obtained following results.1. It was shown that the plasma-etching prior to the growth using SiF_4 gas was very effective to reduce the pileup of impurities as a cleaning method for Si substrates at low-temperature of 250゜c.2. From the experiments, it was found that the presence of SiH_2F_2 and H_2 in the gas phase was essential for the growth of Si epitaxy at this low-temperature.On the basis of these results, we have fabricated both Si/SiGe strained-layer superlattices (SLSS) and heavily P-doped silicon thin films to clarify the merits of photo-assisted chemical vapor deposition.3. The Si/SiGe superlattices were grown by photo-CVD at a very low-temperature of 250゜c. The superlattice structures were directly observed by transmission electron microscopy (TEM) measurements and it seems likely that SLSs could be useful as a buffer layer for silicon epitaxial technology.4. Heavily P-doped silicon films was successfully grown by the photo-CVD technique at 250゜c. The best values of carrier concentration and resistivity were 1.7x10^<21>cm^<-3> and 3.2x10^<-4> cm, respectively.From above mentioned results, it was shown that the photo-chemical vapor deposition technique has been the best candidate for future epitaxial technology of silicon.

在典型的高温工艺条件下，外延层的必要尺寸受到掺杂剂在衬底外扩散长度的限制。因此，开发低温硅外延以进一步减小高性能集成电路的尺寸已成为必要。在此背景下，本研究的目的是利用光化学气相沉积技术开发硅的低温外延。利用光- cvd技术，由于反应物气体不是热分解而是光化学分解，可以大大降低生长温度。我们得到了以下结果：结果表明，在生长前使用SiF_4气体进行等离子体刻蚀可以有效地减少杂质的堆积，作为Si衬底在250℃低温下的清洁方法。从实验中发现，SiH_2F_2和H_2在气相中的存在是在这种低温下生长Si外延的必要条件。在这些结果的基础上，我们制备了Si/SiGe应变层超晶格（SLSS）和重p掺杂硅薄膜，以阐明光辅助化学气相沉积的优点。Si/SiGe超晶格在250℃的极低温度下通过光- cvd生长。通过透射电子显微镜（TEM）测量直接观察到超晶格结构，SLSs似乎可以作为硅外延技术的缓冲层。在250℃下，通过光- cvd技术成功地生长了重p掺杂的硅膜。载流子浓度和电阻率的最佳值分别为1.7x10^<21>cm^<-3>和3.2x10^<-4> cm。以上结果表明，光化学气相沉积技术是未来硅外延技术的最佳选择。