Study of Novel Silicon Heterojunction Solar Cells with Controlled Fixed Charge
Study of Novel Silicon Heterojunction Solar Cells with Controlled Fixed Charge
批准号:
19206001
负责人:
KONAGAI Makoto
金额:
$31.12万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009
中文摘要
为提高常规硅太阳电池的能量转换效率,提出了一种新型硅异质结太阳电池。对于以宽禁带n型微晶3C-SiC为发射层,以非晶态AlO为背面钝化层的p型硅太阳电池,效率在世界上首次达到16%。此外,n型微晶硅/未掺杂SiO/p型硅片/p型微晶SiO背接触结构的新型太阳电池的效率达到了18.5%。到2009财年,几乎所有的研究目标都达到了。
英文摘要
Novel Si heterojunction solar cells were proposed to improve the energy conversion efficiency of conventional Si solar cells. For p-type Si solar cells with a widegap n-type micorcystalline 3C-SiC as an emitter layer and with an amorphous AlO as a backside passivation layer, an efficiency of 16% was demonstrated for the first time in the world. Furthermore, very high efficiency of 18.5% has been achieved for a novel solar cell with a configuration of n-type microcrystalline Si/undoped-SiO/p-type Si wafer/p-type microcrystalline SiO back contact. Almost all research targets were met by FY2009.
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DOI:
10.1143/jjap.48.101603
发表时间:
2009-10
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[J. Sritharathikhun;Fangdan Jiang;S. Miyajima;A. Yamada;M. Konagai]
通讯作者:
J. Sritharathikhun;Fangdan Jiang;S. Miyajima;A. Yamada;M. Konagai
FABRICATION OF N-AND P-TYPE HETEROJUNCTION SOLAR CELLSBY USING HYDROGENATED MICROCRYSTALLINE SILICON OXIDE FILM AS AN EMITTER
以氢化微晶氧化硅薄膜为发射极制备N型和P型异质结太阳能电池
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[J. Sritharathikhun, A. Yamada and M. Konagai]
通讯作者:
A. Yamada and M. Konagai
HIGH QUALITY i-a-SiO : H BUFFER LAYER FOR HIGH EFFICIENCY p-μc-SiO : H/N-c-Si HETEROJUNCTION SOLAR CELLS
高品质 i-a-SiO : H 缓冲层,用于高效 p-μc-SiO : H/N-c-Si 异质结太阳能电池
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Junpei Irikawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai]
通讯作者:
Makoto Konagai
Properties of heterojunction crystalline silicon solar cells with a hydrogenated nanocrystalline cubic silicon carbide window layer
具有氢化纳米晶立方碳化硅窗口层的异质结晶体硅太阳能电池的性能
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Shinsuke Miyajima, Akira Yamada, Makoto Konagai]
通讯作者:
Makoto Konagai
DOI:
10.1143/jjap.47.8452
发表时间:
2008-11
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[J. Sritharathikhun;H. Yamamoto;S. Miyajima;A. Yamada;M. Konagai]
通讯作者:
J. Sritharathikhun;H. Yamamoto;S. Miyajima;A. Yamada;M. Konagai
共 18 条
Development of High Efficiency Thin-Substrate Silicon Solar Cells with Controlled Nano-Interface
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批准号:22246001
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$26.04万
-
财政年份:2010
-
负责人:KONAGAI Makoto
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依托单位:
Position control of InAs quantum dots by using AFM oxidation method and application to single electron transistor
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批准号:13450124
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.49万
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财政年份:2001
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负责人:KONAGAI Makoto
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依托单位:
Research of Epitaxial Growth and Electrical Analysis of Si-Ge-C Layer
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批准号:10450114
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.94万
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财政年份:1998
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负责人:KONAGAI Makoto
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依托单位:
Development of nanofabrication technology of metallic p-GaAs and its application to single hole transistors
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批准号:10555101
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$6.59万
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财政年份:1998
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负责人:KONAGAI Makoto
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依托单位:
Study of Nitrogen Doping of ZnSe by Catalysis of Transition Metals
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批准号:06452109
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.35万
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财政年份:1994
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负责人:KONAGAI Makoto
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依托单位:
Study OF Ultra-High Speed Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base
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批准号:04555066
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$11.65万
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财政年份:1992
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负责人:KONAGAI Makoto
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依托单位:
Control of the arrangement of native vacancies and optical in III-VI compound semiconductors
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批准号:04452088
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.78万
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财政年份:1992
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负责人:KONAGAI Makoto
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依托单位:
Investigation of Heterojunction Bipolar Transistors Using Metallic P-Type Base Layer
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批准号:01460136
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.97万
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财政年份:1989
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负责人:KONAGAI Makoto
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依托单位:
Development of Low-Temperature Epitaxy of Silicon by Photo-Chemical Vapor Deposition
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批准号:62850053
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$3.71万
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财政年份:1987
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负责人:KONAGAI Makoto
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依托单位:
海外基金