Observation and control of the interfacial reaction of multilayr thin films for lead bonding wire using optical reflectivity technique.

利用光学反射技术观察和控制引线键合线用多层薄膜的界面反应。

• 批准号: 04452281
• 负责人: UMAKOSHI Yukichi
• 金额: $ 4.16万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452281/
• 关键词: optical reflectivity; thin film; diffusion; semi-conductor; intermetallic compound; welding; lead bonding; diffusion of Au and Cu; 銅と金の拡散; 複層薄膜

Formation of intermetallic phases in Al/Au and Al/Cu thinfilm couples annealed at temperatures between 100ﾟC and 250ﾟC has been investigated using X-ray diffraction and optical reflectivity technique. The Au or Cu metals with the thickness of 100nm were first deposited on SiO_2 plate and then Al thin film with the thickness of 100nm was produced on the Au or Cu film in vacuum. Formation of several intermetallic compounds was confirmed by X-ray analysis after annealing. The formation and growth of Al_2Cu, AlCu and Al_2Au could be observed by the variation of optical reflectivity with wavelength. The inter-diffusion of metals in Al/Au thin film occurred faster than that in Al/Cu during annealing. For example, the growth rate constants (k) of Al_2Au and Al_2Cu layrs in thin film couples annealed at 200ﾟC were 3.4x10^<-6> and 2.4x10^<-7> cm/sec^<1/2>, respectively. The growth rate of these intermetallic layrs was faster in thin films than in diffusion couples of bulk metals.The strength of interfacial reaction products between Al and Cu was investigated using indentation test. The strength increased rapidly with increasign time and thickness of reaction zone, and then decreased. An appropriate thickness of the reaction zone at the interface contributed to the improvement of the strength of Al-Cu lead bonding wires.

用X射线衍射和光学反射率技术研究了Al/Au和Al/Cu薄膜偶在100 ~ 250 ℃退火时金属间化合物相的形成。首先在SiO_2衬底上沉积100 nm厚的Au或Cu金属膜，然后在真空中在Au或Cu膜上制备100 nm厚的Al薄膜。几种金属间化合物的形成，通过退火后的X射线分析确认。通过光反射率随波长的变化可以观察到Al_2Cu、AlCu和Al_2Au的形成和生长。退火过程中，Al/Au薄膜中金属间的互扩散速度比Al/Cu薄膜中快。例如，在200 ℃退火的薄膜对中，Al_2Au和Al_2Cu层的生长速率常数（k）分别为3.4 × 10 ~<-6><-7>（-1）cm/sec和2.4 × 10 ~（-1）cm/sec。这些金属间化合物层的生长速率在薄膜中比在块体金属的扩散偶中快。随着反应时间的延长和反应区厚度的增加，强度迅速增加，然后下降。适当的界面反应区厚度有利于提高Al-Cu引线键合线的强度。

项目成果

馬越佑吉: "光反射率変化によるAl/AuおよびAl/Cu複層薄膜中の金属間化合物形成層の観察" 日本金属学会誌. (印刷中). (1994)

Yukichi Umakoshi：“通过光学反射率的变化观察 Al/Au 和 Al/Cu 多层薄膜中的金属间化合物形成层”（Journal of the Japan Institute of Metals）（1994 年出版）。

馬越佑吉: "光反射率変化によるAl/AuおよびAl/Cu複層薄膜中の金属間化合物形成層の観察" 日本金属学会誌.

Yukichi Umakoshi：“基于光学反射率变化的 Al/Au 和 Al/Cu 多层薄膜中金属间化合物形成层的观察”，日本金属学会杂志。

Yukichi Umakoshi: "Observation of intermetallic phases formed in Al/Au and Al/Cu thin film couples using optical relectivity technique" J.Japan Institute of Metals. (in press). (1994)

Yukichi Umakoshi：“使用光学反射技术观察 Al/Au 和 Al/Cu 薄膜对中形成的金属间相”J.Japan Institute of Metals。