Research on Functional Devices Utilizing Single Electron Tunneling Phenomena

利用单电子隧道现象的功能器件研究

• 批准号: 05452188
• 负责人: TANIGUCHI Kenji
• 金额: $ 4.99万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452188/
• 关键词: Single Electron Tunnel Devices; Coulomb blockade; Pseudo-CMOS logic circuits; Tunnel Capacitor; 回路シミュレーション; NAND回路

(1) Using a Monte Carlo circuit simulator, we investigated various device structures with the use of single electron tunneling (SET) phenomena. The decrease of tunnel resistance is essential to ensure high current drivabiltiy of SET devices but leads to circuit malfunctions due to co-tunneling effect. We demonstrated that there exists a suitable tunneling value depending on circuit scale.(2) We proposed a scaling rule for SET devices. Although the down-scaling of capacitors results in the increase of drain current and applied voltage, we showed that junction-temperature-rise due to Joule heat may prohibit their normal operation.(3) We demonstrated that "multi-electron" logic instead of "single-electron" is suitable for stable SET circuit operation since electronic charge in a rather large load capacitor screens electron in a control node which is confirmed by simulations of inverter chain circuits. We found that the best load capacitor would be a "15-electron" logic from a view point of a trade-off between switching time and dissipation power.(4) We established basic process technologies utilizing our EB direct writing to fabricate SET devices on GaAs/AlGaAs hetero-structures.

(1)利用蒙特卡罗电路模拟器，研究了利用单电子隧穿（SET）现象的各种器件结构。隧道电阻的减小对于保证SET器件的高电流驱动性是必不可少的，但由于共隧道效应会导致电路故障。我们证明了存在一个合适的隧穿值，这取决于电路的规模。(2)提出了SET器件的缩放规则。虽然电容器的缩小会导致漏极电流和外加电压的增加，但由于焦耳热引起的结温升高可能会妨碍其正常工作。(3)我们证明了“多电子”逻辑而不是“单电子”逻辑适合于稳定的SET电路工作，因为相当大负载电容器中的电子电荷屏蔽了控制节点中的电子，这一点通过逆变器链电路的仿真得到了证实。我们发现，从开关时间和耗散功率之间权衡的角度来看，最佳负载电容器将是“15电子”逻辑。(4)我们建立了利用EB直写技术在GaAs/AlGaAs异质结构上制造SET器件的基本工艺技术。

项目成果

"単一電子論理回路のシミュレーション" 電子情報通信学会論文誌. J77. (1994)

“单一电子逻辑电路的仿真”电子、信息和通信工程师学会学报 J77。

K.Taniguchi,M.Kirihara,N.Kuwamura and C.Hamaguchi: "Digital Circuit Applications of Single Electron Tunneling Devices" Pro. of the 13th Symposium on Future Electron Devices. 13. 34-37 (1994)

K.Taniguchi、M.Kirihara、N.Kuwamura 和 C.Hamaguchi：“单电子隧道器件的数字电路应用”Pro。

Kenji Taniguchi, Nobuhiro Kuwamura, Chihiro Hamaguchi: "Denshi 1 ko de denryu wo seigyosuru kyukyoku no debaisu" Seisan gijutsu. 46. 52-54 (1994)

Kenji Taniguchi、Nobuhiro Kuwamura、Chihiro Hamaguchi：“Denshi 1 ko de denryu wo seigyosuru kyukyoku no debaisu” Seisan gijutsu。

桑村信博、谷口研二、浜口智尋: "単一電子論理回路のシミュレーション" 電子情報通信学会論文誌C. 77. 221-228 (1994)

Nobuhiro Kuwamura、Kenji Taniguchi、Tomohiro Hamaguchi：“单个电子逻辑电路的仿真” IEICE Transactions C. 77. 221-228 (1994)

M.Kirihara, N.Kuwamura, K.Taniguchi and C.Hamaguchi: ""Monte Carlo Study of Single Electron Devices"" Extended Abstracts of the Internatiolnal Conference on Solid State Devices and Materials. 26. 328-330 (1994)

M.Kirihara、N.Kuwamura、K.Taniguchi 和 C.Hamaguchi：“单电子器件的蒙特卡罗研究”国际固态器件和材料会议的扩展摘要。