Study of Random Telegraph Noise in Ultra Small MOSFET and its Reliability

随机电报图产生来自载波陷阱中超小MOSFET的噪声，由台式计算机、Pico-安培计和电压来源组成的自动测量系统进行了测量。当前的开关数已被累积到计算机存储器中，然后被统计分析的运载火箭捕获/发射时间。请注意，随机电报噪声应在低温度通量的条件下进行测量，通常少于一个等级的centigrade，因为平均捕获/发射时间中测量温度导致的强度差异顺序的变化：产生屏障高度可能接近于100个meV。在捕获/发射时间中发现的激活能量与屏障升高直接相关，与晶格重构中的弹性应变产生有关。对噪声数据揭示的分析，其中陷阱导致随机电报器噪声位置1至2纳米分离的硅/Sio2接口 ... More e. e.被困的电荷再脉冲范围是反转电荷密度的一个函数，因为筛选效应的作用。在强烈的逆转制度下，随机电报噪音很少被观察到。在较弱的转换条件下，随机电报噪声被观测到的MOSFET与信道宽度以下的一个十微米，因为反向范围是几个一百微米的顺序。在低温度演示增强的随机噪声中进行测量;接口陷阱产生的机制已被调查。陷阱产生率是高能量电子的作用，是将数量的电子与它们的动力能结合在一起。产生的陷阱数目可以被发现进入氧化物的孔的数量。在超小的MOSFET中，载体能量在通道中不再是由于非equilibrium载体传输的电场的唯一功能。因此，应根据传统模型修改电压缩放指南。我们为超小型MOSFET提出了一个新的电压缩放指南。Less（低）

Random telegraph noise originating from carrier trapping in ultra small MOSFETs have been measured by an automated measurement system composed of desktop computer, Picoーammeter and voltage sources. Vast number of on-off current characteristics has been accumulated into computer memory and then capture/emission time for carriers have been statistically analyzed. Noted that the random telegraph noise should be measured under the condition of low temperature fluctuation, typically less than one degree centigrade, because the change of measurement temperature causes order of magnitude difference in the average capture/emission times : derived barrier height is approximately several hundred meV. The activation energy of the capture/emission time is found to directly relate to barrier heignt associated with elastic strain originating from lattice restructuring.The analysis of the noise data reveals that the traps causing random telegraph noise locate 1 to 2 nm apart from the Si/Sio2 interfac … More e. The Coulomb repulsive range due to the trapped charge is a function of the inversion charge density because of the screening effect. In the strong inversion regime, the random telegraph noise was rarely observed. In the weak inversion condition, random telegraph noise is observed for the MOSFETs with channel width of below one tenth micrometer because the repulsive range is the order of several hundredth micrometer. Measurements at low temperature demonstrated enhanced random noise.The mechanism of interface trap generation has been investigated. Trap generation rate due to high energy electrons is function of the number of electrons colliding the interface and of their kinetic energy. Number of generated traps due to holes is found to be proportional to that of the injected holes into the oxide.In ultra small MOSFETs, carrier energy is no more unique function of electric field in the channel because of non-equilibrium carrier transport. Therefore, voltage scaling guideline should be modified from the conventional model. We proposed a new voltage scaling guideline for ultra small MOSFETs. Less