STUDY ON MAGNETIC THIN FILMS OF Fe-Si-Al ALLOYS

Fe-Si-Al合金磁性薄膜的研究

• 批准号: 60460197
• 负责人: HOMMA Motofumi
• 金额: $ 0.64万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1986
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60460197/
• 关键词: Fe-Si-Al alloy; RF sputtering; Sendust; 薄膜の保磁力; RFスパッタ; 実動透磁率; 積層磁性薄膜

Sputtered thin films of five kind of Sendust alloys with different compositions were made by means of RF sputtering equipment. These films were deposited on the following substrates; glass, silisa and non-ferro-magnetic alloys, in a high purity Ar gas atmosphere. Sputtering speed was about 0.3 <micro> m/min at the optimum target voltage of 3.0 kV. Al and Si concetrations changed with sputtering conditions. The decrease in Al concentration was about 10 wt% and in Si was 7 wt% under the optimum sputtering condition. Coercive force depended on target voltages, Ar gas pressures and substrate temperatures. The optimum target voltage was 3.0 kV and the Ar gas pressure was 50 mtorr. Under this condition obtained coercive force of film deposited on cooling substrate was 22 Oe and when substrate was heated at 400゜C it became lower to 10 Oe. By annealing in a high vacuum atmosphere coercive force was remarkably improved from 10 Oe to 0.2 Oe. The laminated Sendust films were composed of four thin films of 5 <micro> m, separating by sputtered silica of about 0.1 <micro> m thickness. The effective permeability of these laminated Sendust film was over 1000 at frequency of 10 MHz.

利用射频溅射设备溅射了五种不同成分的铁硅铝合金薄膜。这些薄膜沉积在以下基材上；玻璃、二氧化硅和非铁磁合金，在高纯度氩气气氛中。在3.0 kV的最佳靶电压下，溅射速度约为0.3μm/min。 Al 和 Si 的浓度随溅射条件而变化。在最佳溅射条件下，Al 浓度降低约 10 wt%，Si 浓度降低约 7 wt%。矫顽力取决于目标电压、Ar气压和基板温度。最佳目标电压为3.0 kV，Ar气压为50 mtorr。在此条件下，沉积在冷却基板上的薄膜的矫顽力为22 Oe，当基板加热到400゜C时，矫顽力降低至10 Oe。通过在高真空气氛中退火，矫顽力从10 Oe显着提高到0.2 Oe。层压铁硅铝薄膜由四片5微米厚的薄膜组成，由约0.1微米厚的溅射二氧化硅隔开。这些层压铁硅铝薄膜的有效磁导率在 10 MHz 频率下超过 1000。