Structure of Lattice-Matched Fluoride Films
晶格匹配氟化物薄膜的结构
基本信息
- 批准号:60460231
- 负责人:
- 金额:$ 3.97万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1985
- 资助国家:日本
- 起止时间:1985 至 1986
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The atomic structure of a single-crystal Ca_xSr_<1-x>F_2 (x = 0.43) film grown on GaAs(111)B surface has been determined with the X-ray standing-wave technique. A new method has been applied which allows complete analysis of mismatched structures using a single specimen. (Ca, Sr) atoms at the interface are found seven-coordinated, supporting the previously proposed growth model of epitaxial cubic fluoride films. The atomic layer spacing across the interface is contracted by 0.37 <Ang> compared with that calculated from the bulk bond lengths. The film is strained in such a way that the (111) interplanar distance is contracted by 0.28 %, although bulk mixed fluoride exactly lattice matches GaAs at room temperature, The study is based on a theoretical re-investigation of the standing-wave position with respect to atomic planes in absorbing non-centrosymmetric crystals.
用x射线驻波技术测定了生长在GaAs(111)B表面的Ca_xSr_<1-x>F_2 (x = 0.43)单晶薄膜的原子结构。应用了一种新方法,可以使用单个样品对不匹配结构进行完整分析。在界面处发现(Ca, Sr)原子为七配位,支持了之前提出的外延立方氟化膜生长模型。与体键长计算结果相比,界面原子层间距缩小了0.37 <Ang>。尽管块状混合氟化物在室温下与GaAs晶格完全匹配,但薄膜的(111)面间距离收缩了0.28%。该研究是基于对吸收非中心对称晶体时原子面驻波位置的理论重新研究。
项目成果
期刊论文数量(12)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y. Saitoh: Japanese Journal of Applied Physid. 27. (1988)
Y. Saitoh:日本应用物理学杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Yoshiharu Saitoh, Hiroo Hashizume and Kazuo Tsutsui: "Structure Analysis of Lattice-Matched Ca_xSr_<1-x>F_2 Epilayers by the X-Ray Standing- Wave Method" Japanese Journal of Applied Physics. 27. (1988)
Yoshiharu Saitoh、Hiroo Hashizume 和 Kazuo Tsutsui:“通过 X 射线驻波法对晶格匹配 Ca_xSr_<1-x>F_2 外延层进行结构分析”《日本应用物理学杂志》。
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- 影响因子:0
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HASHIZUME Hiroo其他文献
HASHIZUME Hiroo的其他文献
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{{ truncateString('HASHIZUME Hiroo', 18)}}的其他基金
Development of new techniques for the analysis of magnetic structures using third-generation synchrotron X-ray sources
开发利用第三代同步加速器X射线源分析磁结构的新技术
- 批准号:
10044071 - 财政年份:1998
- 资助金额:
$ 3.97万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Analysis of interface magnetic structures in magnetic thin films using resonant X-ray scattering techniques
使用共振 X 射线散射技术分析磁性薄膜中的界面磁结构
- 批准号:
09305019 - 财政年份:1997
- 资助金额:
$ 3.97万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Studies of mesoscopic structures with synchrotron X-rays
利用同步加速器 X 射线研究细观结构
- 批准号:
07044135 - 财政年份:1995
- 资助金额:
$ 3.97万 - 项目类别:
Grant-in-Aid for international Scientific Research
X-ray reflection study of layred structures in multilayrs for magnetic recording
磁记录多层层状结构的X射线反射研究
- 批准号:
06452310 - 财政年份:1994
- 资助金额:
$ 3.97万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
DEVELOPMENT OF A HIGH-PRECISION ELECTRON DENSITY MEASUREMENT TECHNIQUE FOR MULTILAYER FILMS
多层薄膜高精度电子密度测量技术的开发
- 批准号:
06555092 - 财政年份:1994
- 资助金额:
$ 3.97万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Analysis of epilayr structures by high-resolution X-ray methods
通过高分辨率 X 射线方法分析外延层结构
- 批准号:
04044066 - 财政年份:1992
- 资助金额:
$ 3.97万 - 项目类别:
Grant-in-Aid for international Scientific Research
X-RAY STRUCTURES OF HETEROEPITAXIAL GROWTHS
异质外延生长的 X 射线结构
- 批准号:
03402052 - 财政年份:1991
- 资助金额:
$ 3.97万 - 项目类别:
Grant-in-Aid for General Scientific Research (A)
Apparatus for rapid analysis of wide-angle X-ray diffraction patterns at high temperatures
高温下广角 X 射线衍射图样快速分析装置
- 批准号:
59880007 - 财政年份:1984
- 资助金额:
$ 3.97万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
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