X-RAY STRUCTURES OF HETEROEPITAXIAL GROWTHS

1.对生长在GaAs(111)衬底上的CaSrF_2外延晶体及其界面的结构进行了全面的表征。研究结果已发表在《表面科学》杂志上。用X射线驻波技术研究了超薄EuBaCuO和GdBaCuO外延晶体在SrTiO_3(001)表面的生长界面结构。实验数据表明，对于EuBaCuO和GdBaCuO来说，CuO层和CuO2层都不能在类似的SrTiO_3的二氧化钛表面上生长，BaO层和稀土层都不能在SRO表面上生长。研究结果已发表在《物理评论》上。首次在超高真空条件下对沉积的Si(111)表面进行了掠角X射线站立实验。已经证实，砷原子在三重位置取代了顶层的硅原子，形成了一个块状表面。证据表明，As原子占据了高对称性的位置，几乎没有无序。这项研究已经发表在《物理评论》上。利用掠角X射线驻波技术对Si(100)：As表面进行了初步实验。用掠入角X射线反射率测量方法对机械化抛光硅表面的微观粗糙度进行了评价。实验证明，该技术可以在不破坏样品的情况下，定量测定2-5A RMS的粗糙度。一份原稿以《日本日报》的形式印制出来。

1. The structure of epitaxial CaSrF2 crystals grown on GaAs(111) substrates, as well as of their interfaces, have been fully characterized. The results have been published in Surface Science.2. The structure of growth interface of untrathin EuBaCuo and GdBaCuO epitaxial crystals on SrTiO3(001) surface have been investigated using the X-ray standing-wave technique. The experimental data show that for both EuBaCuO and GdBaCuO neither the CuO layr nor CuO2 layr can be the first grown layr on the TiO2 surface of SrTiO3 Similary, neither the BaO layr nor the rare-earth layr can be the first layr on the SrO surface. The results have been published in Physical Review.3. Grazing-angle X-ray standing experiments were performed for the first time on Asdeposited Si(111) surface under ultrahigh vacuum conditions. It has been confirmed that arsenic atoms form a bulklike surface replacing the top-layr Si atoms at the threefold positions. Evidences indicating that the As atoms occupy the high-symmetry sites with little disorder was obtained. The research has been published in Physical Review.4. Preliminary experiments were executed on Si(100) : As surface using the grazing-angle X-ray standing-wave technique.5. Microroughness of mechanochemically polished silicon surfaces has been evaluated by grazing-angle X-ray reflectivity measurements. It has been demonstrated that the technique can quantitatively determine roughnesses of 2-5 A rms without damaging the sample. An original paper was printed in J.Jpn.Appl.Phys.out of the work.