Wavelength Stabilization and Control of a Semicondutor Laser Using the Faraday Effect and Saturated Absorption Spectroscopy

利用法拉第效应和饱和吸收光谱对半导体激光器进行波长稳定和控制

• 批准号: 04650036
• 负责人: SATO Takashi
• 金额: $ 1.34万
• 依托单位: Niigata University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04650036/
• 关键词: Semiconductor Laser; Rb Absorption Line; Saturated Absorption Spectroscopy; Faraday Effect; Wavelength Stabilization; Wavelength Control; Rb原子の吸収線; 飽和吸収分光; ファラデー効果; 波長安定化; 波長制御

The frequency stabilization of a semiconductor laser using a saturated absorption line of atoms of morecules has been performed usually by applying a small modulation directly to the injection current. We demonstrated a few frequency stabilization methods without a direct small modulation, i.e., without a frequency broadening, here. We applied both biased and modulated magnetic fields to the Rb atoms and modulated the absorption and refractive index profiles by the Zeeman and the Faraday effects. These modulated absorption and refractive index profiles provide the modulated transmitted light intensity signal as an indirect modulation signal for obtaining a control signal. This cintrol signal is fedback to the injection current for stabilization. The method using the Faraday effect provided the better stability than the direct modulation method in a certain modulation condition in our optical setup. We also investigated two other optical setups which used the Faraday or the Zeeman effects for applying the indirect modulation and confirmed the superiority of these indirect modulation methods over the direct modulation methods in the stability and the spectral width. These indirect modulation methods provided not noly the good stability and the narrow oscillation bandwidth but also the frequency controlability within the absorption spectrum range by changing the biased magnetic field strength which is used for improving the frequency stability.

利用分子原子的饱和吸收线稳定半导体激光器的频率，通常是通过直接对注入电流施加小的调制来实现的。我们演示了一些无需直接小调制的频率稳定方法，即，没有频率展宽我们对Rb原子施加了偏置磁场和调制磁场，利用塞曼效应和法拉第效应对Rb原子的吸收和折射率分布进行了调制。这些调制的吸收和折射率分布提供调制的透射光强度信号作为用于获得控制信号的间接调制信号。该控制信号被反馈到注入电流以实现稳定。在一定的调制条件下，利用法拉第效应的方法比直接调制方法具有更好的稳定性。我们还研究了另外两种使用法拉第或塞曼效应进行间接调制的光学装置，并证实了这些间接调制方法在稳定性和光谱宽度方面优于直接调制方法。这些间接调制方法不仅提供了良好的稳定性和窄的振荡带宽，而且通过改变用于改善频率稳定性的偏置磁场强度，在吸收谱范围内提供了频率可控性。

项目成果

Hiokuki Nakano, Takao Nakazawa, Yoshihiro Asayama, Takahide Shigeno, Takashi Sato and Minoru Shimba: "'Frequency Stabilization of a Semiconductor Laser Using a Magneto-optical Effect'" IEICE Technical Report. OQE93-27. (1993)

Hiokuki Nakano、Takao Nakazawa、Yoshihiro Asayama、Takahide Shigeno、Takashi Sato 和 Minoru Shimba：“‘利用磁光效应实现半导体激光器的频率稳定’”IEICE 技术报告。

Hiromichi Watanabe, Makoto Ishiguro, Jun'ich Mizumoto, Takashi Sato, Masashi Ohkawa, Takeo Maruyama and Minoru Shimba: "'Frequency Sabilization of a Semiconductor Laser under FSK Modulation of Some Duty Ratios" Niigata Shisho Conference of IEE Jpn.Paper N

Hiromichi Watanabe、Makoto Ishiguro、Junich Mizumoto、Takashi Sato、Masashi Ohkawa、Takeo Maruyama 和 Minoru Shimba：“某些占空比 FSK 调制下半导体激光器的频率稳定”IEE Jpn.Paper N 的 Niigata Shisho 会议

水本潤一: "飽和吸収分光信号を用いた直接周波数変調時における半導体レーザの周波数安定化と周波数基準信号" 電子情報通信学会光・量子エレクトロニクス研究会OQE93-60. (1993)

Junichi Mizumoto：“使用饱和吸收光谱信号进行直接频率调制时的半导体激光频率稳定和频率参考信号”IEICE 光学和量子电子学研究组 OQE93-60 (1993)。

佐藤孝: "Frequency Stabilization of a Semiconductor Laser under Direct Frequency Shift Keying Using the Saturated Absorption Signal" Jpn.J.Appl.Phys.33(掲載予定). (1994)

Takashi Sato：“使用饱和吸收信号进行直接频移键控的半导体激光器的频率稳定”Jpn.J.Appl.Phys.33（待出版）。

上野 隆: "Rb原子の飽和吸収分光信号におけるファラデー効果を用いた半導体レーザの周波数安定化" 電子情報通信学会論文誌. J76-CI. 10-17 (1993)

Takashi Ueno：“利用 Rb 原子饱和吸收光谱信号中的法拉第效应实现半导体激光器的频率稳定”，电子、信息和通信工程师学会汇刊 J76-17 (1993)。