Low Loss Sputtered Thin Films for Optical Circuits.
用于光电路的低损耗溅射薄膜。
基本信息
- 批准号:04650264
- 负责人:
- 金额:$ 1.28万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (C)
- 财政年份:1992
- 资助国家:日本
- 起止时间:1992 至 1993
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
An investigation was made on electrical and optical properties of sputtered tantalum oxide films with a view toward its possible use as a dielectric waveguide material. Electrical conductivity and breakdown strength were measured. The current increases exponentially with the voltage, besides it depends on the temperature strongly. The doping of nitrogen increases the conductivity. The temperature dependence of the breakdown strength is not significant. A nitrogen doped sample manifests a lower breakdown strength than doped one. The varjation of refractive index with wavelength for nitrogen doped and undoped samples were measured. The nitrogen doped sample shows the similar characteristics. The dopjng of nitrogen decreases the refractive index. The attenuation index could not be evaluated because of the small magnitude within the experimental errors. They may be below 10^<-3> in the visible region. An observation of properties of a waveguide was made. The linearly polarized He-Ne laser light was coupled into a TaOx thin film waveguide with coupling prisms. The propagation of the guided light depends on the polarization of the incident light.
对溅射钽氧化物薄膜的电学和光学性质进行了研究,以期将其用作介电波导材料。测量电导率和击穿强度。电流随电压呈指数增加,而且与温度密切相关。氮的掺杂增加了电导率。击穿强度的温度依赖性并不显着。氮掺杂样品表现出比掺杂样品更低的击穿强度。测量了掺杂氮和未掺杂样品的折射率随波长的变化。氮掺杂样品显示出类似的特性。氮的掺杂降低了折射率。由于实验误差幅度较小,无法评估衰减指数。在可见光区域它们可能低于10^-3。对波导的特性进行了观察。线偏振 He-Ne 激光通过耦合棱镜耦合到 TaOx 薄膜波导中。引导光的传播取决于入射光的偏振。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
数据更新时间:{{ journalArticles.updateTime }}
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
MIYAIRI Keiichi其他文献
MIYAIRI Keiichi的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('MIYAIRI Keiichi', 18)}}的其他基金
Synchronous optical modulator by liquid crystal orientation
液晶取向同步光调制器
- 批准号:
12450123 - 财政年份:2000
- 资助金额:
$ 1.28万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
High Dielectric Strength PlasmaーPolymerized Thin Films.
高介电强度等离子体聚合薄膜。
- 批准号:
63550231 - 财政年份:1988
- 资助金额:
$ 1.28万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
相似海外基金
Development of fluoride based high-k dielectric thin film materials for MIS structure
MIS结构用氟化物高k介电薄膜材料的开发
- 批准号:
20H02188 - 财政年份:2020
- 资助金额:
$ 1.28万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Measurement of trap level near the electrode and dielectric thin film boundary by TSC and TL
利用 TSC 和 TL 测量电极和电介质薄膜边界附近的陷阱能级
- 批准号:
10650664 - 财政年份:1998
- 资助金额:
$ 1.28万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Influence of Energy Beam Irradiation to Dielectric Thin Film Growth Process.
能量束辐照对介电薄膜生长过程的影响。
- 批准号:
06650753 - 财政年份:1994
- 资助金额:
$ 1.28万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Plasma Enhanced Chemical Vapor Deposition of Epitaxial and Multiple Dielectric Thin Film Structures (Materials Research)
外延和多重介电薄膜结构的等离子体增强化学气相沉积(材料研究)
- 批准号:
8414580 - 财政年份:1985
- 资助金额:
$ 1.28万 - 项目类别:
Continuing Grant