课题基金 / 基金详情

Memristives In-Memory-Computing: Radiation hard Memory for Computing in Space

Memristives In-Memory-Computing: Radiation hard Memory for Computing in Space
忆阻内存计算:用于太空计算的辐射硬内存
批准号:
441921944
负责人:
Professor Dr.-Ing. Dietmar Fey
金额:
$0.0万
依托单位国家:
德国
项目类别:
Priority Programmes
财政年份:
2020
资助国家:
德国
项目状态:
已结题
起止时间:
2019-12-31 至 2023-12-31

项目摘要

项目成果

Professor Dr.-Ing. Dietmar Fey的其他基金

相似基金

相关文献

中文摘要
翻译
用于空间应用的微电子电路必须具有抗辐射的弹性。空间互联网(internet -of- space, IoS)概念将支持农村地区的互联网接入。为了实现这一概念,将抗辐射的电子芯片送入轨道至关重要,它们必须在轨道上可靠地工作。忆阻式存储设备适合于这样的任务,因为这些电气开关特性是基于离子而不是电子。除了在辐射硬度方面具有弹性外,rram也是非易失性存储器(NVM)。为了使使用的CMOS电子器件在空间或其他地面辐射污染环境中达到最高的可靠性,建议将完整的计算系统的内容存储在及时、定期的安全备份存储中。对于这种备份系统,rram是有用的,因为它们的辐射硬度和存储在存储单元内的数据在电源故障时的非易失性。由rram组成的非易失性内存处理器对IoS应用程序很有吸引力。在这个项目中,我们想要更进一步,按照内存计算概念的意义,将一些处理负载移到RRAM内存中。内存操作将在RRAM阵列的雷达硬感放大器中通过信号评估和在处理步骤中直接集成记忆性RRAM单元来完成。为了验证抗辐射系统架构的功能,我们的目标是进行密集的仿真工作。在仿真环境中,一个新的记忆器件模型将用于研究使用内存计算进行故障检测的完整辐射硬系统体系结构。该提案的主要重点是探索新的技术和计算思想。具有新的非易失性存储器概念(即RRAM)的辐射硬存储器方法是该方法的核心。为了成功实现这一目标,我们还瞄准了以下范围:高度创新的技术,可以提高性能并使新兴的空间互联网应用成为可能。
英文摘要
Microelectronic circuits used in space applications have to be resilient against radiation effects. The concept Internet-of-Space (IoS) will support the internet access in rural regions. In order to realize this concept, it is crucial to place radiation-hard electronic chips into the orbit, where they have to work reliable. Memristive memory devices are suited for such tasks because these electrical switching properties are based on ions instead of electrons. Besides their resilient properties in terms of radiation hardness, RRAMs are also non-volatile memories (NVM). To achieve the highest reliability of the used CMOS electronics in space or other terrestrial radiation contaminated environments, it is recommendable to store the content of the complete computing system in a timely periodic secure back-up store. For this kind of back-up system RRAMs are helpful due to their radiation hardness and the non-volatility of the data stored inside the memory cells in case of a power failure. Non-volatile memory processors, consisting of RRAMs are attractive for IoS applications. In this project, we want to go a step ahead and move some of the processing load to the RRAM memory in the sense of an in-memory computing concept. The in-memory operations will be carried out in the rad-hard sense amplifiers of a RRAM array by signal evaluation and direct integration of memristive RRAM cells in the processing step. To verify the functionality of the radiation-hard system architecture, we are targeting intensive simulation work. In the simulation environment a new model for memristive devices will be used for the investigation of the complete radiation-hard system architecture using in-memory computing for fault detection.The main focus of this proposal is to explore new technological and computational ideas. The radiation hard memory approach with a new non-volatile memory concept, so called RRAM, is the core of this approach. To successfully address this objective, we are also targeting the scope: highly innovative technology leading to improvements in performance and enabling emerging internet-of-space applications.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Integrated Memristor-Based Computer Architectures
  • 批准号:
    389549790
  • 项目类别:
    Research Grants
  • 资助金额:
    $0.0万
  • 财政年份:
    2017
  • 负责人:
    Professor Dr.-Ing. Dietmar Fey
  • 依托单位:
Kompetenzentwicklung mit Eingebetteten Mikro- und Nanosystemen - KOMINA
Organic architectures for self-organising smart pixel sensor chips
Memristive hybrid on-chip memory for a low-power RISC-V processor - Design and Implementation (HYB-RISC)
国内基金
海外基金
CREB在杏仁核神经环路memory allocation中的作用和机制研究
  • 批准号:
    31171079
  • 项目类别:
    面上项目
  • 资助金额:
    55.0万元
  • 批准年份:
    2011
  • 负责人:
    周宇
  • 依托单位:
面向多核处理器的硬软件协作Transactional Memory系统结构
  • 批准号:
    60873053
  • 项目类别:
    面上项目
  • 资助金额:
    30.0万元
  • 批准年份:
    2008
  • 负责人:
    刘轶
  • 依托单位: