Memristives In-Memory-Computing: Radiation hard Memory for Computing in Space
Memristives In-Memory-Computing: Radiation hard Memory for Computing in Space
批准号:
441921944
负责人:
Professor Dr.-Ing. Dietmar Fey
金额:
$0.0万
依托单位国家:
德国
项目类别:
Priority Programmes
财政年份:
2020
资助国家:
德国
项目状态:
已结题
起止时间:
2019-12-31 至 2023-12-31
中文摘要
空间应用中使用的微电子电路必须能够抵御辐射影响。空间互联网(IoS)的概念将支持农村地区的互联网接入。为了实现这一概念,将抗辐射的电子芯片放入轨道至关重要,在那里它们必须可靠地工作。忆阻存储器装置适合于此类任务,因为这些电切换性质是基于离子而非电子。除了它们在辐射硬度方面的弹性特性之外,RRAM也是非易失性存储器(NVM)。为了在空间或其他地面辐射污染环境中实现所用CMOS电子器件的最高可靠性,可以将整个计算系统的内容存储在及时的定期安全备份存储器中。对于这种备份系统,RRAM是有帮助的,因为它们的辐射硬度和在电源故障的情况下存储在存储单元内的数据的非易失性。由RRAM组成的非易失性存储器处理器对于IoS应用是有吸引力的。在这个项目中,我们想更进一步,从内存计算概念的角度来看,将一些处理负载转移到RRAM内存。存储器内操作将通过信号评估和在处理步骤中忆阻RRAM单元的直接集成在RRAM阵列的抗辐射感测放大器中执行。为了验证抗辐射系统架构的功能,我们正在进行密集的模拟工作。在模拟环境中,将使用忆阻器件的新模型来研究使用内存计算进行故障检测的完整抗辐射系统架构,该提案的主要重点是探索新的技术和计算思想。辐射式硬存储器是这种方法的核心,它采用了一种新的非易失性存储器概念,即所谓的RRAM。为了成功实现这一目标,我们还瞄准了范围:高度创新的技术,从而提高性能并实现新兴的空间互联网应用。
英文摘要
Microelectronic circuits used in space applications have to be resilient against radiation effects. The concept Internet-of-Space (IoS) will support the internet access in rural regions. In order to realize this concept, it is crucial to place radiation-hard electronic chips into the orbit, where they have to work reliable. Memristive memory devices are suited for such tasks because these electrical switching properties are based on ions instead of electrons. Besides their resilient properties in terms of radiation hardness, RRAMs are also non-volatile memories (NVM). To achieve the highest reliability of the used CMOS electronics in space or other terrestrial radiation contaminated environments, it is recommendable to store the content of the complete computing system in a timely periodic secure back-up store. For this kind of back-up system RRAMs are helpful due to their radiation hardness and the non-volatility of the data stored inside the memory cells in case of a power failure. Non-volatile memory processors, consisting of RRAMs are attractive for IoS applications. In this project, we want to go a step ahead and move some of the processing load to the RRAM memory in the sense of an in-memory computing concept. The in-memory operations will be carried out in the rad-hard sense amplifiers of a RRAM array by signal evaluation and direct integration of memristive RRAM cells in the processing step. To verify the functionality of the radiation-hard system architecture, we are targeting intensive simulation work. In the simulation environment a new model for memristive devices will be used for the investigation of the complete radiation-hard system architecture using in-memory computing for fault detection.The main focus of this proposal is to explore new technological and computational ideas. The radiation hard memory approach with a new non-volatile memory concept, so called RRAM, is the core of this approach. To successfully address this objective, we are also targeting the scope: highly innovative technology leading to improvements in performance and enabling emerging internet-of-space applications.
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会议论文
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批准号:389549790
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2017
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负责人:Professor Dr.-Ing. Dietmar Fey
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依托单位:
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