Memristives In-Memory-Computing: Radiation hard Memory for Computing in Space
Memristives In-Memory-Computing: Radiation hard Memory for Computing in Space
批准号:
441921944
负责人:
Professor Dr.-Ing. Dietmar Fey
金额:
$0.0万
依托单位国家:
德国
项目类别:
Priority Programmes
财政年份:
2020
资助国家:
德国
项目状态:
已结题
起止时间:
2019-12-31 至 2023-12-31
中文摘要
用于空间应用的微电子电路必须具有抗辐射效应的能力。空间互联网(IOS)的概念将支持农村地区的互联网接入。为了实现这一概念,至关重要的是将抗辐射电子芯片送入轨道,在那里它们必须可靠地工作。记忆存储器件适合于这样的任务,因为这些电开关特性是基于离子而不是电子。除了具有抗辐射性能外,RRAM还是非易失性存储器(NVM)。为了在太空或其他受地面辐射污染的环境中实现使用过的CMOS电子设备的最高可靠性,建议将整个计算系统的内容存储在及时的定期安全备份存储中。对于这种备份系统,RRAM是有帮助的,因为它们具有抗辐射能力,并且在断电的情况下存储在存储单元内的数据不会挥发。由RRAM组成的非易失性存储器处理器对iOS应用程序很有吸引力。在这个项目中,我们想要更进一步,在内存计算概念的意义上将一些处理负载转移到RRAM内存。在处理步骤中,将通过信号评估和记忆RRAM单元的直接积分,在RRAM阵列的RAD-Hard读出放大器中执行存储器内操作。为了验证抗辐射系统架构的功能,我们的目标是密集的模拟工作。在模拟环境中,一个新的记忆器件模型将被用来研究使用内存计算进行故障检测的完整的抗辐射系统架构。这项提议的主要重点是探索新的技术和计算思想。具有新的非易失性存储器概念的辐射硬存储器方法,即所谓的RRAM,是该方法的核心。为了成功地实现这一目标,我们还瞄准了范围:高度创新的技术,从而提高了性能,并使新兴的空间互联网应用成为可能。
英文摘要
Microelectronic circuits used in space applications have to be resilient against radiation effects. The concept Internet-of-Space (IoS) will support the internet access in rural regions. In order to realize this concept, it is crucial to place radiation-hard electronic chips into the orbit, where they have to work reliable. Memristive memory devices are suited for such tasks because these electrical switching properties are based on ions instead of electrons. Besides their resilient properties in terms of radiation hardness, RRAMs are also non-volatile memories (NVM). To achieve the highest reliability of the used CMOS electronics in space or other terrestrial radiation contaminated environments, it is recommendable to store the content of the complete computing system in a timely periodic secure back-up store. For this kind of back-up system RRAMs are helpful due to their radiation hardness and the non-volatility of the data stored inside the memory cells in case of a power failure. Non-volatile memory processors, consisting of RRAMs are attractive for IoS applications. In this project, we want to go a step ahead and move some of the processing load to the RRAM memory in the sense of an in-memory computing concept. The in-memory operations will be carried out in the rad-hard sense amplifiers of a RRAM array by signal evaluation and direct integration of memristive RRAM cells in the processing step. To verify the functionality of the radiation-hard system architecture, we are targeting intensive simulation work. In the simulation environment a new model for memristive devices will be used for the investigation of the complete radiation-hard system architecture using in-memory computing for fault detection.The main focus of this proposal is to explore new technological and computational ideas. The radiation hard memory approach with a new non-volatile memory concept, so called RRAM, is the core of this approach. To successfully address this objective, we are also targeting the scope: highly innovative technology leading to improvements in performance and enabling emerging internet-of-space applications.
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会议论文
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批准号:389549790
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2017
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负责人:Professor Dr.-Ing. Dietmar Fey
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依托单位:
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