Atomic level surface modification of good crystallizability oligothiophene film for development of immuno-sensors

为了研制免疫传感器，将抗体高密度固定在有机薄膜表面是非常重要的；在有机薄膜表面引入氨基等化学活性基团是非常重要的。低聚硫薄膜具有良好的结晶性，具有层状结构，分子的长轴几乎垂直于衬底。我们合成了末端带有氨基的α，α‘双(氨甲基)低聚硫吩类化合物，并试图制备出氨基密度较高的表面。其合成方法如下：首先对2-氨基甲基噻吩氨基进行保护。用格氏试剂进行了噻吩环的偶联反应。在最后一步中删除保护基团。化合物经红外光谱、核磁共振和元素分析确证。通过红外光谱分析发现，低聚硫苯类化合物的薄膜可以通过真空蒸发而不会发生化学劣化；由于存在Rheta-2 Rheta X射线衍射峰，薄膜具有分子层状结构。还发现氨基在表面以高密度(约10^&lt；14-gt；cm^&lt；-2&gt；)形式存在。上述结果表明，利用低聚硫吩类化合物的性质，对免疫传感器进行原子级表面修饰是成功的。

In order to develop immuno-sensors, it is important to immobilized antibodies to a surface of organic film as high-density ; It is important to introduce a chemical active group such as amino-group to a surface of organic film. It is known that oligothiphene film is good crystallizability, it has layred structure and the long axis of the molecule is almost perpendicular to a substrate. We synthesis alpha, alpha 'bis (aminomethyl) oligothiophene which has amino group at terminal position and try to fabricate the surface which has high-density of amino-group. The synthesis method is described as follow ; The amino group of 2-aminomethylthiophene are first protected. The coupling reaction of thiophene rings is carried out by Grignard reagent. The protecting groups are removed in the final step. The compounds are identified by IR,NMR and elemental analysis. It was found that the films of the oligothiophenes can be accesscible by vacuum evaporation without chemical deterioration because of investigation with IR.It was found that the film comprised the molecular layred structure because og rheta -2 rheta X-ray diffraction peaks. It was also found that the amino-groups exist as high-density (ca.10^<14>cm^<-2>) at the surface. The above results indicates that the atomic level surface modification for the development of immuno-sensors is successfully carried out by utilization of the properties of oligothiophenes.