Atomic level surface modification of good crystallizability oligothiophene film for development of immuno-sensors

用于开发免疫传感器的良好结晶性低聚噻吩薄膜的原子级表面修饰

• 批准号: 05680753
• 负责人: IKEDA Kenji
• 金额: $ 0.9万
• 依托单位: University of Tokyo,
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05680753/
• 关键词: Oligothiophene; Amino-Group; Evaporeted film; Layred structure; Surface Modification; 免疫センサ; 化学修飾; 有機薄膜

In order to develop immuno-sensors, it is important to immobilized antibodies to a surface of organic film as high-density ; It is important to introduce a chemical active group such as amino-group to a surface of organic film. It is known that oligothiphene film is good crystallizability, it has layred structure and the long axis of the molecule is almost perpendicular to a substrate. We synthesis alpha, alpha 'bis (aminomethyl) oligothiophene which has amino group at terminal position and try to fabricate the surface which has high-density of amino-group. The synthesis method is described as follow ; The amino group of 2-aminomethylthiophene are first protected. The coupling reaction of thiophene rings is carried out by Grignard reagent. The protecting groups are removed in the final step. The compounds are identified by IR,NMR and elemental analysis. It was found that the films of the oligothiophenes can be accesscible by vacuum evaporation without chemical deterioration because of investigation with IR.It was found that the film comprised the molecular layred structure because og rheta -2 rheta X-ray diffraction peaks. It was also found that the amino-groups exist as high-density (ca.10^<14>cm^<-2>) at the surface. The above results indicates that the atomic level surface modification for the development of immuno-sensors is successfully carried out by utilization of the properties of oligothiophenes.

为了开发免疫传感器，重要的是将抗体高密度地固定到有机膜的表面;重要的是将化学活性基团例如氨基引入到有机膜的表面。低聚噻吩薄膜具有良好的结晶性，具有层状结构，分子的长轴几乎垂直于衬底。我们合成了末端带有氨基的α，α ′-双（氨甲基）噻吩低聚物，并尝试制备具有高氨基密度的表面。合成方法如下：首先对2-氨甲基噻吩的氨基进行保护。噻吩环的偶联反应是通过格氏试剂进行的。在最后一步中除去保护基团。化合物经IR、NMR和元素分析鉴定。通过红外光谱分析发现，低聚噻吩薄膜可以用真空蒸发的方法制备而不发生化学变质，通过X射线衍射分析发现，薄膜具有分子层状结构。还发现氨基以高密度（约10 ^<14>cm^<-2>）存在于表面。上述结果表明，利用低聚噻吩的性质，成功地进行了用于免疫传感器开发的原子级表面修饰。

项目成果

H.Muguruma, T.Hanajiri and M.Saito: "Study of introduction methods of amino group to polymer sutface by exposure to new reactive plasma" Proceedings of the 2nd Internatinal Conference on Reactive Plasmas and 11th Symposium on Plasma Processing. 491-494 (1

H.Muguruma、T.Hanajiri 和 M.Saito：“通过暴露于新型反应等离子体将氨基引入聚合物表面的方法的研究”第二届国际反应等离子体会议和第十一届等离子体加工研讨会论文集。

六車仁志: "末端にアミノ基を持つオリゴチオフェンの合成とその蒸着膜の性質" 日本化学会第69春季年会. (発表予定). (1995)

Hitoshi Muguruma：“带有末端氨基的低聚噻吩的合成及其沉积膜的性质”，第 69 届日本化学会春季年会（预定报告）（1995 年）。

H. Muguruma: "Synthesis and Charecterrization of α, α'-Bis (aminomethyl) oligothiophenes and properties of theirs Evaporated Films" Journal of American Chemical Society. (発売予定). (1995)

H. Muguruma：“α, α-双（氨基甲基）低聚噻吩的合成和表征及其蒸发薄膜的特性”，《美国化学学会杂志》（即将发布）。

H.Muguruma, T.Saito, S,Sasaki, S.Hotta and I.Karube: "Synthesis and Characterization of alpha, alpha' -Bis (aminomethyl) oligothiophenes and properties of theirs Evaporated Films" Journal of American Chemical Society. (To be published).

H.Muguruma、T.Saito、S、Sasaki、S.Hotta 和 I.Karube：“α, α-双（氨基甲基）低聚噻吩的合成和表征及其蒸发薄膜的特性”美国化学会杂志。

H.Muguruma: "Study of introduction methods of amino group to polymer surface by exposure to new reactive plasma" Proceedings of the 2nd Internatinal Conference on Reactive Plasmas and 11th Symposium on Plasma Processing. 491-494 (1994)

H.Muguruma：“通过暴露于新型反应等离子体将氨基引入聚合物表面的方法的研究”第二届国际反应等离子体会议和第十一届等离子体加工研讨会论文集。