Atomic level surface modification of good crystallizability oligothiophene film for development of immuno-sensors

为了开发免疫传感器，将抗体固定在高密度的有机膜表面是很重要的；在有机膜表面引入氨基等化学活性基团是很重要的。已知寡噻吩薄膜结晶性好，具有层状结构，分子长轴几乎垂直于底物。我们合成了末端有氨基的α， α '双（氨基甲基）寡硫吩，并试图制备具有高密度氨基的表面。合成方法如下：2-氨基甲基噻吩的氨基首先受保护。噻吩环的偶联反应采用格氏试剂进行。最后一步移除保护组。化合物经红外光谱、核磁共振和元素分析鉴定。红外光谱研究表明，通过真空蒸发制备的低硫噻吩薄膜不会发生化学变质。通过x射线衍射峰分析，发现薄膜具有分子层状结构。还发现在表面有高密度的氨基（ca.10^<14>cm^<-2>）存在。以上结果表明，利用低聚噻吩的性质，成功地进行了用于研制免疫传感器的原子级表面改性。

In order to develop immuno-sensors, it is important to immobilized antibodies to a surface of organic film as high-density ; It is important to introduce a chemical active group such as amino-group to a surface of organic film. It is known that oligothiphene film is good crystallizability, it has layred structure and the long axis of the molecule is almost perpendicular to a substrate. We synthesis alpha, alpha 'bis (aminomethyl) oligothiophene which has amino group at terminal position and try to fabricate the surface which has high-density of amino-group. The synthesis method is described as follow ; The amino group of 2-aminomethylthiophene are first protected. The coupling reaction of thiophene rings is carried out by Grignard reagent. The protecting groups are removed in the final step. The compounds are identified by IR,NMR and elemental analysis. It was found that the films of the oligothiophenes can be accesscible by vacuum evaporation without chemical deterioration because of investigation with IR.It was found that the film comprised the molecular layred structure because og rheta -2 rheta X-ray diffraction peaks. It was also found that the amino-groups exist as high-density (ca.10^<14>cm^<-2>) at the surface. The above results indicates that the atomic level surface modification for the development of immuno-sensors is successfully carried out by utilization of the properties of oligothiophenes.