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Fabrication of Semiconductor Sensor for Immunological Measurement

用于免疫测量的半导体传感器的制造

基本信息

批准号：
61550292
负责人：
IKEDA Kenji
金额：
$ 1.15万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

项目摘要

Fabrication process of semiconductor sensors for immunological measurement was investigated. The device fabrication-process utilized in this work consists of two steps; (1) deposition of thin organic film by plasma technique, and (2) protein immobilization. It is desirable that the electrical properties of organic film are stable and that high density of protein molecules can be immobilized in an orientation-controlled manner.Electrical property of the organic film was studied using metal/insulator/semiconductor structured capacitors. Plasma-polymerized organic film was deposited onto SiO_2/Si structured substrates. After depositing the Al electrodes, capasitance-voltage characteristics were measured. The hysteresis and the shift of flatband voltage were observed. As far as the technological application to semiconductor sensors is concerned, the above two properties are disadvantageous features. Thus, attempts were made to reduce those effects by heat treatment. The effect was significant. The hysteresis width as well as the shift of flatband voltage were reduced. The best result was obtained in the case of the heat treatment at 200 ゜C for 30 min. in N_2 atmosphere.Immobilization reaction was performed as the following steps; first, amino-groups were introduced to the surface of the plasma-polymerized film by glow-discharge treatment in HH_3, and then, pre-treated antibody molecules (Fab'-SH domain) were covalently immobilized by a bifunctional cross-linking reagent. Using this method, binding sites of the molecule with the supporting material can uniquely be specified. The density of the immobilized antibody molecules was approximately 6 x 10^<11> cm^<-2>, which agreed well with the theoretically estimated one.

研究了用于免疫检测的半导体传感器的制作工艺。本工作中使用的器件制造过程包括两个步骤：(1)用等离子体技术沉积有机薄膜；(2)蛋白质固定化。利用金属/绝缘体/半导体结构电容器对有机薄膜的电学性质进行了研究，认为有机薄膜的电学性质是稳定的，并且可以通过定向控制的方式固定高密度的蛋白质分子。在SiO_2/Si结构衬底上沉积了等离子体聚合有机薄膜。沉积铝电极后，测量了其电容-电压特性。观察到了磁滞效应和平带电压的漂移。就半导体传感器的技术应用而言，上述两个特性是不利的。因此，人们试图通过热处理来减少这些影响。效果是显著的。减小了磁滞宽度和平带电压漂移。当热处理温度为200゜C，热处理时间为30min时，效果最佳。在氮气气氛中，首先在HH3中通过辉光放电在等离子体聚合膜表面引入氨基，然后用双功能交联剂共价固定经过处理的抗体分子(Fab‘-SH结构域)。使用这种方法，可以唯一地确定分子与支撑材料的结合位置。固定化抗体分子的密度约为6×10~(-11)cm~(-2)~(-2)，与理论估算值吻合较好。