Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon Interface
高能光电子能谱的发展及其在高κ电介质/硅界面化学态分析中的应用
基本信息
- 批准号:15206006
- 负责人:
- 金额:$ 31.2万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2003
- 资助国家:日本
- 起止时间:2003 至 2005
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Electron energy analyzer (R4000-10 keV, Gammadata Scienta Co.) dedicated for hard X-ray photoelectron spectroscopy (HX-PES) was developed. Using this analyzer with energy resolution of 45 meV and X-ray with photon energy by of 5.95 keV at undulator beam line BL29XU and BL47XU, which has full width half maximum of 60 meV, photoelectron spectroscopy can be achieved with total resolution of 75 meV (E/ΔE=79,000). Then, the following problems were found : 1)Analyzer could not be used for HXPES excited by 8 keV photons, 2)Power supply was unstable, etc. After these problems were solved, HX-PES with total energy resolution of 75 meV was achieved at hv=8 keV and 90 meV at hv=10 keV. Using this HX-PES system, the thermal stability of LaO_x/Si interface, which will be used as gate insulator in future generation of CMOS devices, was studied by measuring 5.95 keV photons' excited angle-resolved La 3d, Si 1s and O is photoelectron spectra at BL47XU. Si 1s spectra arising from La silicate formed at LaO_x/Si interface were found to appear if this interface was annealed in nitrogen gas under atmospheric pressure at temperature above 400℃. The depth profile of composition and chemical structures of LaO_x/Si structure were determined by applying maximum entropy concept to angle-resolved La 3d, Si 1s and O 1s spectra. Here, the compositional depth profile determined by high resolution Rutherford backscattering was used as a starting compositional depth profile. From these analyses, the thickness of LaO_x/Si interfacial transition layer was found to increase by annealing this interface above 400℃.
电子能量分析仪(R4000-10keV,Gammadata Science enta Co.)研制了硬X射线光电子能谱(HX-PES)。在BL29XU和BL47XU波荡器束线上,用能量分辨率为45 meV的X射线和全宽半高为60 meV的光子能量差5.95keV的X射线,可以获得总分辨率为75 meV的光电子能谱(E/ΔE=79,000)。结果发现:1)分析仪不能用于8keV光子激发的HXPES,2)电源不稳定等问题,解决了这些问题后,在HV=8keV和HV=10keV时,HX-PES的总能量分辨率分别达到75 meV和90 meV。利用HX-PES系统,在BL47XU上测量了5.95keV光子激发角分辨的La3d、Si1s和Ois光电子能谱,研究了将作为栅绝缘层的Lax/Si界面的热稳定性。LaOx/Si界面形成的La硅酸盐在4 0 0℃以上的常压氮气中退火后,产生了Si1S谱。将最大熵概念应用于角分辨La3d、Si1s和O1s谱,确定了LaOx/Si结构的成分和化学结构的深度分布。这里,由高分辨率卢瑟福背向散射确定的成分深度剖面被用作起始成分深度剖面。从这些分析中发现,LaOx/Si界面过渡层的厚度在400℃以上退火后有所增加。
项目成果
期刊论文数量(172)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Temperature-induced valence transition in transition in EuNi_2(Si_<0.20>Ge_<0.80>)_2 studied by hard X-ray photoemission spectroscopy
硬X射线光电子能谱研究EuNi_2(Si_<0.20>Ge_<0.80>)_2过渡过程中温度诱导的价态跃迁
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:K.Yamamoto;N.Kamakura;M.Taguchi;A.Chainani;Y.Takata;K.Horiba;S.Shin;et al.
- 通讯作者:et al.
Magnetism, microstructure, and photoelectron spectroscopy of Nd_<0.7>Ce_<0.3>MnO_3 thin films
Nd_<0.7>Ce_<0.3>MnO_3薄膜的磁性、显微结构和光电子能谱
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:T.Yanagida;H.Tanaka;T.Kawai;E.Ikenaga;M.Kobata;J-J.Kim;K.Kobayashi
- 通讯作者:K.Kobayashi
Composition, chemical structure, and electronic band structure of rare earth Oxide/Si(100) interfacial transition layer
- DOI:10.1016/j.mee.2004.01.005
- 发表时间:2004-05
- 期刊:
- 影响因子:2.3
- 作者:T. Hattori;T. Yoshida;T. Shiraishi;Kensuke Takahashi;H. Nohira;S. Joumori;K. Nakajima;Motofumi Suzuki-Mot
- 通讯作者:T. Hattori;T. Yoshida;T. Shiraishi;Kensuke Takahashi;H. Nohira;S. Joumori;K. Nakajima;Motofumi Suzuki-Mot
Pulsed Source MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry
高 k 介电薄膜的脉冲源 MOCVD,通过光谱椭圆光度术进行原位监测
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:Y.Tsuchiya;M.Endo;M.Kurosawa;R.T.Tung;T.Hattori;et al.
- 通讯作者:et al.
K.Kobayashi, M.Yabashi, Y.Takata, T.Tokushima, S.Shin, K.Tamasaku, D.Miwa, T.Ishikawa, H.Nohira, T.Hattori, Y.Sugita, O.Nakatsuka, A.Sakai, S.Zaima: "High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation
K.Kobayashi、M.Yabashi、Y.Takata、T.Tokushima、S.Shin、K.Tamasaku、D.Miwa、T.Ishikawa、H.Nohira、T.Hattori、Y.Sugita、O.Nakatsuka、A.
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
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HATTORI Takeo其他文献
HATTORI Takeo的其他文献
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{{ truncateString('HATTORI Takeo', 18)}}的其他基金
Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial Analyses
通过极其灵敏和高分辨率的界面分析确定绝缘体/硅界面结构
- 批准号:
19360014 - 财政年份:2007
- 资助金额:
$ 31.2万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Studies on Carrier Trap Levels at Ultrathin SiO_2/Si Interface and Its Relation with Microscopic Structures
超薄SiO_2/Si界面载流子陷阱能级及其与微观结构的关系研究
- 批准号:
10450020 - 财政年份:1998
- 资助金额:
$ 31.2万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Development of Ultra-smooth Si Surface by the Control of SiO_2/Si Interface Formation on an Atomic-Scale
原子尺度控制SiO_2/Si界面形成开发超光滑Si表面
- 批准号:
08455023 - 财政年份:1996
- 资助金额:
$ 31.2万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Formation of Extremely Flat Silicon Oxide/Silicon Interface by the Thermal Oxidation of Hydrogen-Terminated Silicon Surface
通过氢封端硅表面的热氧化形成极其平坦的氧化硅/硅界面
- 批准号:
06452123 - 财政年份:1994
- 资助金额:
$ 31.2万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Study on Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface and Structure of Interface between Ultra-thin Metal Film and Ultra-thin Silicon Oxide Film
氢封端硅表面氧化初期及超薄金属膜与超薄氧化硅膜界面结构的研究
- 批准号:
04452096 - 财政年份:1992
- 资助金额:
$ 31.2万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Investigation on Improvement in the Ultrasoft X-ray Excited Photoelectron Spectroscopy
超软X射线激发光电子能谱的改进研究
- 批准号:
63850009 - 财政年份:1988
- 资助金额:
$ 31.2万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
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