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Investigation on Improvement in the Ultrasoft X-ray Excited Photoelectron Spectroscopy

超软X射线激发光电子能谱的改进研究

基本信息

批准号：
63850009
负责人：
HATTORI Takeo
金额：
$ 4.8万
依托单位：
Musashi Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1989
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-63850009/
关键词：
Photoelectron Spectroscopy XPS Soft X-ray Photoelectron Spectroscopy Zr Mzeta Rotating anode SiO_2 Si interface Native oxide Thermal oxide シリコン界面超軟X線非破壊分析 Si_2p光電子スペクトル洗浄過程

项目摘要

In the present investigation on ultrasoft X-ray excited photoelectron spectroscopy, the increase in energy resolution, the increase in X-ray intensity, the production of monochromatic X-ray using diffraction grating and the high stability of power supply were tried to realize and the following points were clarified: 1) The intensities of background signals included in Si2p photoelectron spectra measured are extremely large, because of high energy-electrons incident on the sample surface. The design of deflector for the elimination of these high energy-electrons should be optimized., 2) In the present study, the X-ray incident on diffraction grating with incident angle of 15 degrees results in weak diffracted intensity. In order to increase this intensity, the incident angle should be optimized., 3) The FWHM of ZrMzeta line is sensitively affected by the contamination because of low transmittance of ZrMzeta radiation.Using high surface sensitivity of ZrMzera excited photoelectron spectroscopy, the chemical structures of silicon oxide surface, those of ultrathin silicon oxide films could be investigated. Results can be summarized as follows: 1) The silicon suboxides are formed on the surface of thermal oxides by annealing in dry argon or dry nitrogen., 2) The chemical structures of silicon native oxides formed in deionized water at room temperature are weakly affected by the density of silicon atoms in the crystallographic plane., 3) The formation rate of silicon native oxides on (100) surface is larger than those on (110) and (111) surfaces., 4) The distribution of Si^<3+> in silicon native oxides formed during wet chemical treatments depends on the method of chemical treatments. This Si^<3+> can be correlated with Si-H bond.

目前超软X射线激发光电子能谱研究中，试图实现能量分辨率的提高、X射线强度的增加、利用衍射光栅产生单色X射线以及电源的高稳定性，并阐明了以下几点：1）由于高能电子入射到样品表面，测得的Si2p光电子能谱中包含的背景信号强度极大。应优化偏转器的设计以消除这些高能电子。2）在本研究中，X射线以15度的入射角入射到衍射光栅上，导致衍射强度较弱。为了增加这种强度，应优化入射角。3）由于ZrMzeta辐射的透射率较低，ZrMzeta谱线的半高宽很容易受到污染的影响。利用ZrMzeta激发光电子能谱的高表面灵敏度，可以研究氧化硅表面的化学结构，超薄氧化硅薄膜的化学结构。结果可概括如下：1）通过在干燥氩气或干燥氮气中退火，在热氧化物表面形成硅低氧化物。2）室温下去离子水中形成的硅原生氧化物的化学结构受晶面中硅原子密度的影响较弱。3）（100）表面上硅原生氧化物的形成速率大于（100）表面上的硅原生氧化物的形成速率。 (110)和(111)表面。4)在湿化学处理期间形成的硅自然氧化物中Si 3+ 的分布取决于化学处理的方法。该Si 3+ 可以与Si-H键关联。