Determination of Insulator/Si Interface Structure by Extremely Sensitive and Highly Resolved Interfacial Analyses

通过极其灵敏和高分辨率的界面分析确定绝缘体/硅界面结构

• 批准号: 19360014
• 负责人: HATTORI Takeo
• 金额: $ 11.9万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19360014/
• 关键词: 界面; シリコン酸化膜; シリコン窒化膜; 光電子分光法

Composition and chemical structures of high quality Si-SiO_2 systems formed using oxygen radicals and those of high quality Si-Si_3N_4 systems formed using nitrogen-hydrogen radicals were studied by measuring angle-resolved photoelectron spectra arising from Si 2p and O 1s core levels and valence band with the same probing depth.

本文用相同探测深度的Si 2p和O 1s芯能级及价带角分辨光电子能谱研究了氧自由基形成的优质Si SiO2体系和氮氢自由基形成的优质Si Si3N4体系的组成和化学结构。

项目成果

Atomically Flat Silicon Surface and Silicon /Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs

用于 (100) 表面取向大直径晶圆的原子级平坦硅表面和硅/绝缘体界面形成技术，推出高性能和低噪声金属-绝缘体-硅 FET

• 发表时间: 2009
• 期刊: IEEE Trans.Electron Devices Vol. 56, No. 2
• 作者: R. Kuroda;T. Suwa;A. Teramoto;R. Hasebe;S. Sugawa;T. Ohmi
• 通讯作者: T. Ohmi

Subnitride and valence band offset at Si_3N_4/Si interface formed using nitrogen-hydrogen radicals

使用氮氢自由基形成的 Si_3N_4/Si 界面处的亚氮化物和价带偏移

• 发表时间: 2007
• 期刊: Applied Physics Letters Vol. 90, No. 12
• 作者: M. Higuchi;S. Sugawa;E. Ikenaga;J. Ushio;H. Nohira;T. Maruizumi;A. Teramoto;T. Ohmi;T. Hattori
• 通讯作者: T. Hattori

Electric Characteristics of Si_3N_4 Films Formed by Directly Radical Nitridation on Si(110)and Si(100)Surfaces

Si(110)和Si(100)表面直接自由基氮化Si_3N_4薄膜的电学特性

• 发表时间: 2007
• 期刊: Japanese Journal of Applied Physics 46
• 作者: 一色秀夫;牛山智幸;中島崇之;王興軍;木村忠正;竹谷純一;T. Seo;Masaaki HIGUCHI
• 通讯作者: Masaaki HIGUCHI

Crystallographic orientation dependence of compositional transition and valence band offset at SiO_2/Si interface formed using oxygen radicals

氧自由基形成的 SiO_2/Si 界面的成分跃迁和价带偏移的晶体取向依赖性

• 发表时间: 2010
• 期刊: Applied Physics Letters Vol. 96, No. 10
• 作者: T. Suwa;A. Teramoto;Y. Kumagai;K. Abe;X. Li;Y. Nakao;M. Yamamoto;Y. Kato;T. Muro;T. Kinoshita;T. Ohmi;T. Hattori
• 通讯作者: T. Hattori

Study on Gate Stacks in Future Nano-Scaled CMOS using Hard X-Ray Photoelec-tron Spectroscopy

使用硬 X 射线光电子能谱研究未来纳米级 CMOS 中的栅极堆栈

• 发表时间: 2009
• 作者: S. Zaima;T. Hattori
• 通讯作者: T. Hattori