Formation of Extremely Flat Silicon Oxide/Silicon Interface by the Thermal Oxidation of Hydrogen-Terminated Silicon Surface

为了获得原子级平坦的SiO2/Si界面，研究了原子级平坦的氢封端的硅表面的氧化。研究了预氧化物对氧化物和界面结构的影响，氧化初期的原子尺度氧化过程和SiO2价带的形成，以及初始表面平整度和平台宽度对界面形成的影响。结果表明，在300 ℃大气压下，在干燥氧气中形成的预氧化物，其Si 2 p光电子能谱的宽度在表面附近减小。这意味着预氧化物抑制了氧化物表面附近的应力松弛。从H_2SO_4和H_2O_2的混合溶液中形成的化学氧化物（H_2SO_4氧化物）、热HNO_3中形成的化学氧化物（HNO_3氧化物）以及HCl和H_2O_2的混合溶液中形成的化学氧化物（HCl氧化物）对SiO_2/Si（111）界面形成的影响中发现，氧化反应发生在 ...更多信息 H2SO 4氧化物/Si界面的冶金界面和结构与氢终止的硅表面在300 ℃下在1 Torr干燥氧气中氧化形成的SiO2/Si界面结构相当。本文测量了氧化初期SiO_2价带的形成，并从SiH键伸缩振动红外吸收的测量研究了氧化初期表面硅原子的氧化。结合X射线光电子能谱检测到的界面处低氧化物的形成，这些实验结果与原子尺度上的模拟氧化过程进行了比较。从该模拟中发现，桥接氧原子的形成概率取决于与氧原子联合收割机结合的硅原子的氧化状态和键合构型，并且在Si（100）表面上的氧化比在Si（111）表面上更均匀地进行，这是因为在Si（111）表面上，局部氧化反应在界面处逐层进行，但并不均匀地进行。此外，还研究了SiO_2价带形成初期，台阶宽度对SiO_2/Si（111）界面在600-800 ℃ 1 Torr干氧中氧化过程中变化的影响。少

The oxidation of atomically flat hydrogen-terminated silicon surfaces were investigated in order to obtain atomically flat SiO2/Si interfaces. The effects of preoxides on the structures of oxides and interfaces, the atomic-scale oxidation process and SiO2 valence band formation at the intial stage of oxidation, and the effects of flatness of initial surface and terrace width on the interface formation were studied. It was found for the preoxides formed in dry oxygen with atmospheric pressure at 300 degrees centigrade that the width of Si2p photoelectron spectrum originating from silicon dioxide decreases near the surface. This implies that the preoxide suppresses the stress relaxation near the oxide-surface. It was found from the effects of chemical oxide formed in a mixed solution of H2SO4 and H2O2 (H2SO4 oxide), that formed in hot HNO3 (HNO3 oxide) and that formed in a mixed solution of HCI and H2O2 (HCI oxide) on SiO2/Si(111) interface formation that the oxidation reaction occurs at … More the metallurgical interface and the structure of H2SO4 oxide/Si interface is comparable to the structure of SiO2/Si interface formed by the oxidation of hydrogen-terminated silicon surface in 1 Torr dry oxygen at 300 degrees centigrade. SiO2 valence band formation at the initial stage of oxidastion was measured and the oxidation of surface-silicon atoms at the initial stage of oxidation was investigated from the measurement of infrared absorption arising from stretching vibration of SiH bonds. These experimental results combined with the formation of suboxides at the interface detected by X-rya photoelectron spectroscopy were compared with the simulated oxidation process on atomic scale. It was found from this simulation that the formation probability of bridging oxygen atoms depends on the oxidation state and bonding configuration of silicon atoms, which combine with oxygen atoms, and the oxidation proceeds more uniformly on Si (100) surface than on Si (111) surface because on Si (111) surface local oxidation reaction proceeds layr by layr at the interface, but does not proceeds uniformly. Furthermore, the initial stage of SiO2 valence band formation at the effect of terrace width on the changes in SiO2/Si (111) interface with progress of oxidation in 1 Torr dry oxygen at 600-800 degrees centigrade were studied. Less