Research on vertical InP-related hot electron transistors with insulated gate

通过使用在化合物半导体垂直晶体管中最常见的15 nm宽的源极，实现了对于高速操作重要的高电流密度（6 MA/cm^2）。此外，电流驱动能力不依赖于沟道长度被证实，并建议在沟道中的电子传输弹道。研究了高介电常数介质的高驱动能力和再生长源的横向器件中的方案的扩展。

High current density (6MA/cm^2) that was important for high speed operation was achieved by using a 15-nm-wide source that was narrowest in compound semiconductor vertical transistors. Moreover, the current drivability without dependence of channel length was confirmed and suggested that electron transportation in the channel was ballistic. High-k dielectric for high drivability and regrown source for extension of the scheme in lateral device were also studied.