Research on vertical InP-related hot electron transistors with insulated gate

高电流密度（6MA/cm^2）对于高速运行非常重要，通过使用15纳米宽的源来实现，这在化合物半导体垂直晶体管中是最窄的。此外，证实了不依赖于通道长度的电流可驱动性，并表明电子在通道中的传递是弹道的。研究了高k介电介质对高驱动性的影响，以及在横向器件中扩展方案的再生源。

High current density (6MA/cm^2) that was important for high speed operation was achieved by using a 15-nm-wide source that was narrowest in compound semiconductor vertical transistors. Moreover, the current drivability without dependence of channel length was confirmed and suggested that electron transportation in the channel was ballistic. High-k dielectric for high drivability and regrown source for extension of the scheme in lateral device were also studied.