Ultrafine/High-speed electron devices based on buried nano-metal-wires in compound semiconductors

基于化合物半导体中埋入式纳米金属线的超细/高速电子器件

基本信息

批准号：
14350182
负责人：
MIYAMOTO Yasuyuki
金额：
$ 9.66万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350182/
关键词：
Nano metal electrodes Heterojunction Bipolar Transistors InP Hot Electron Transistors Two-dimensional Electron Gas Attractive Potential Electron Beam Lithography Metalorganic Vapor Phase Epitaxy フリースタンディングワイヤ移動度フリーステンディングワイヤ

项目摘要

Our researches consisted of following two terms.1.Emitter structure for extraction of electrons by buried nano-metal-wires as gateWe fabricated hot electron transistors with buried nano-metal -wires to extract ion of electron. In DC characteristics, saturated I-V characteristics was confirmed.To suppress current injection from emitter to gate, new structure was invented (patent applied for) and ratio between emitter current vs. gate current was enhanced to several tens. Estimated transconductance was 10 mS from obserbed DC charactarisrtics.To reduce scattering of electron, purity of InP intrinsic layer was confirmed. As a result, electron mobility of 110,000 cm^2/Vs at 77 K was confirmed in AlInAs/InP HEMT structure, When Si-doped layer was eliminated, electron mobility of 220,000 cm^2/Vs at 77K was confirmed. To our knowledge, these mobility at 77K was world records. Thus high purity of our materials was confirmed.2.Collector structure by buried nano-metal-wire.Through study through crystal growth, we found that thickness of over layer on wires was changed by the number of wires. Because failure of crystal growth was due to this phenomena, we fabricated the structure with only one wire as a collector with refinement of crystal growth conditions. As a result, we fabricated HBT with one nano^metal wire as collector. In this device, the emitter area was 0.1μm×0.5μm. To our knowledge, this area was smallest as heterojunction bipolar transistors. Smallest total collector capacitance was also confirmed.As a contact resistance, emitter contact resistivity was reduced from 3x10^<-6>Wcm^2 to 1x10^<-6>Wcm^2 and base contact resistivity was reduced from 2.5x10^<-6>Wcm^2 to 3x10^<-7>Wcm^2 by change of electrode material (from titanium to pallsdium). This reduction combined with small collector capacitance is very important to obtain good microwave performance.

我们的研究包括以下两个术语。1。用埋入纳米金属系埋入电子的Emitter结构，作为Gatewe制造的热电子晶体管，带有纳米金属界线，以提取电子离子。在直流特征中，确认了饱和的I-V特性。为了抑制从发射极到栅极的电流注入，发明了新的结构（适用了专利），并且发射极电流与栅极电流之间的比率增强到了几十个。从观察到的直流特征估计的翻译为10 ms。为了减少电子的散射，确认了INP固有层的纯度。结果，在消除Si掺杂层时，在Alinas/INP HEMT结构中确认了110,000 cm^2/vs的电子迁移率，确认了77K时220,000 cm^2/vs的电子迁移率。据我们所知，这些以77K的流动性是世界纪录。确认了我们的材料的高纯度。2。构建的纳米 - 金属线结构。通过晶体生长进行研究，我们发现电线的数量改变了电线上的层厚度。由于晶体生长的失败是由于这种现象造成的，因此我们仅用一根电线作为收集器制造结构，并具有晶体生长条件的细化。结果，我们用一根纳米金属线制造了HBT作为收集器。在此设备中，发射极面积为0.1μmx0.5μm。据我们所知，该区域作为异轴双极晶体管最小。 Smallest total collector capacitance was also confirmed.As a contact resistance, emitter contact resistance was reduced from 3x10^<-6>Wcm^2 to 1x10^<-6>Wcm^2 and base contact resistance was reduced from 2.5x10^<-6>Wcm^2 to 3x10^<-7>Wcm^2 by change of Electrode material (from titanium to pallsdium).这种还原与小型收集器电容相结合，对于获得良好的微波性性能非常重要。