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Ultra High-Speed Operation of Ultra-Fine GaInAs/InP HBT by Suppressing Recombination Current at Mesa Sidewall

通过抑制台面侧壁复合电流实现超细 GaInAs/InP HBT 的超高速运行

基本信息

批准号：
11555092
负责人：
MIYAMOTO Yasuyuki
金额：
$ 8.19万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555092/
关键词：
GaInAs InP HBT Heterojunction Bipolar Transistor Miniaturization of Emitter Electron Beam Exposure Suppression of Undercut Etching Formation of Mesa Sidewall GalnAs

项目摘要

Measurement of Mesa Sidewall Recombination Current of HBT with Fine Emitter Fabricated by Combination of Dry/Wet EtchingIt has been enabled to fabricate 100 nm wide fine emitter by a combination of electron beam exposure, CH_4/H_2 reactive ion etching and wet etching. Size dependence of current gain of this fine HBT has been compared with that of formerly fabricated HBT only by wet etching. In HBT with 010 emitter sidewall realized by a combination of HCl and CH_3COOH etching solution, dry/wet combination etching process has enabled to obtain current performance even or superior to that obtained by only wet etching and current gain over 50, which is sufficiently large for circuit application, has been realized. Therefore, we could show excellent current performance could be realized even in HBT with fine emitter.Fabrication of High-Speed HBT with Fine Emitter and Metal Wire CollectorFine emitter structure combined with reduction method of base-collector capacitance can reduce base-collector capacitance, and therefore, can realize fast operation of HBT. So, we have introduced a base-collector capacitance reduction method, where buried metal wire has been used as collector, to HBT with sub-micron wide emitter. As results, in a device with an emitter having a width of 0.3 um and a length of 1.5 um, a base-collector capacitance less than 0.1 fF, which is the smallest value among ever reported, has been confirmed and a maximum oscillation frequency f_<max> of 200 GHz has been also achieved. Since at present the device performance is largely restricted by non-intrinsic part of the device, such as contact resistance, a more high-speed operation of HBT can be expected when we introduce, for example, a wiring technique reported by another research groups.

干湿结合蚀刻技术制备HBT精细发射极的台面侧壁复合电流的测量电子束曝光、CH_4/H_2反应离子蚀刻和湿法蚀刻相结合的方法已经能够制造出100 nm宽的精细发射极。并与以往仅湿法蚀刻制备的HBT进行了电流增益的尺寸依赖性比较。在HCl和CH_3COOH蚀刻液组合实现的010发射极侧壁HBT中，干/湿组合蚀刻工艺可以获得与湿法蚀刻相同或更好的电流性能，并且电流增益大于50，足以用于电路应用。因此，我们可以证明，即使在具有精细发射极的HBT中，也可以实现优异的电流性能。采用细射极和金属线集电极制备高速HBT细射极结构结合基极集电极电容的减小方法，可以减小基极集电极电容，从而实现高速HBT的快速运行。因此，我们提出了一种采用埋置金属线作为集电极的基极集电极电容降低方法，用于亚微米宽发射极的HBT。结果表明，在发射极宽度为0.3 um、长度为1.5 um的器件中，基极-集电极电容小于0.1 fF，这是迄今为止报道的最小值，并且最大振荡频率f_<max>为200 GHz。由于目前器件性能在很大程度上受到器件非固有部分的限制，例如接触电阻，因此当我们引入另一个研究小组报告的布线技术时，可以期望HBT的高速运行。