Characterization of Chemical Bonding Features of Ti Oxide based ReRAM and Their Impact on Resistance-Switching Properties

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The chemical bonding features in TiO_2-based Resistance Random Access Memory (ReRAM) after resistance change have been studied to gain a better understanding of the mechanism of resistance switching. For the Pt/TiO_2/Pt structure after resistance switching, the oxidation of Pt electrode at low resistance state (LRS) and the reduction of this PtO_x at high resistance state (HRS) were observed by hard X-ray photoelectron spectroscopy. The result suggests that generation of oxygen vacancies in Ti-oxide matrix is responsible for the formation of conductive pass resulting in LRS and that repeatable red-ox reaction at the Pt/TiO_2 interface plays an important role on resistance switching behavior. To change in the oxide network and to reduce the oxygen content in TiO_2, tri-valent Y ions were added into the oxide matrix of quadri-valent Ti ions. In Au/TiY_xO_y/Pt structures it has been demonstrated that the variations in resistance switching voltages are markedly suppressed by the Y_2_O3 addition into TiO_2.