Metal-Insulator Transition in Neutron Transmutation Doped Ge
中子嬗变掺杂Ge中的金属-绝缘体转变
基本信息
- 批准号:11440117
- 负责人:
- 金额:$ 2.88万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B).
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2000
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We report on the scaling analysis of the low temperature (T=0.02-1 K) electronic conductivity σ with and without magnetic fields in order to determine the critical exponents μ, μ', s, and ν of the conductivity without magnetic fields, conductivity with magnetic fields, dielectric constant, and localization length, respectively. Two series of Ge : Ga samples, one that is nominally uncompensated and the other with the compensation ratio 0.32, have been employed. For the uncompensated series of samples, Ga concentration N of the range 0.90N_c<N<1.40N_c with the special focus on the region 0.99N_c<N<1.01N_c where N_c is the critical concentration for MIT has been studied in detail.We have obtained for the uncompensated series μ【approximately equal】0.5 for N>1.01N_c μ【approximately equal】1.1 for 0.99N_c<N<1.01N_c, and μ'【approximately equal】1.1 for all N and for applied fields B>4T using the finite temperature scaling of the forms σ (N,T) ∝ T^xf (N-N_c/T^y), σ (N, T, B=const.) ∝ T^<x'>f (N-N_c/T^y) and σ (N=const., T, B) ∝ T^<x'>f (B_c-B/T^y) with μ=x/y and μ'=x'/y'. The resistivity ρ of the insulating samples has been analyzed in the framework of Efros-Shklovskii's variable range hopping theory and the relation ρ^∝T^<1/3>exp(T_0/T)^<1/2> has been found for all samples. A further analysis with magnetic fields has lead to determination of critical exponents ν【approximately equal】0.33 and s【approximately equal】0.62 for N<0.99N_c, and ν【approximately equal】1.2 and s【approximately equal】2.3 for 0.99N_c<N<N_c, i.e., Wegner's scaling law μ【approximately equal】ν holds only for the small region ±1% of N_c. Comparison of these results with that of the compensated series demonstrates unambiguously that the special features of the small region, ±1% of N_c in nominally uncompensated series appear due to an extremely small level of compensation (less than 0.1%) that unavoidably presents in the samples, i.e., the width of the critical region changes as a function of the compensation.
本文对低温(T=0.02-1 K)电子电导率σ在有磁场和无磁场情况下的标度分析,以确定无磁场电导率、有磁场电导率、介电常数和定域长度的临界指数μ、UNF '、s和ν。两个系列的Ge:Ga样品,一个是名义上未补偿的,另一个补偿比为0.32,已被采用。对于未补偿的样本系列,本文详细研究了0.90N_c<N<1.40N_c范围内的Ga浓度N,特别是0.99N_c<N<1.01N_c范围内的Ga浓度N,其中N_c是MIT的临界浓度,我们得到了未补偿系列μ[约等于]0.5(N>1.01N_c)μ[约等于]1.1(0.99N_c<N<1.01N_c)1.01N_c,且对于所有N和外加场B> 4 T,使用形式为σ(N,T)B=常数.τ T ^x '> f(N-N_c/T^y)和σ(N=常数,T,B)= T^x '> f(B_c-B/T^y),其中μ=x/y且INF'= x '/y'。在Efros-Shklovskii的变程跳跃理论框架下分析了绝缘样品的电阻率ρ,发现所有样品的电阻率ρ均与exp(T_0/T)^<1/2>有关系。对磁场的进一步分析导致确定临界指数ν[约等于]0.33和s[约等于]0.62(N<0.99N_c),以及ν[约等于]1.2和s[约等于]2.3(0.99N_c<N<N_c),即,Wegner标度律μ[近似等于]ν仅对N_c的±1%的小区域成立。将这些结果与补偿系列的结果进行比较,明确地表明,标称未补偿系列中N_c的±1%的小区域的特殊性是由于样品中可解释地存在的极小的补偿水平(小于0.1%),即,临界区域的宽度作为补偿的函数而改变。
项目成果
期刊论文数量(62)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
大槻東巳,伊藤公平,Keith Slevin: "アンダーソン転移の理論と実験の現状"固体物理. Vol.34.No.5. 301-308 (1999)
Tomomi Otsuki、Kohei Ito、Keith Slevin:“安德森跃迁理论和实验的现状”固体物理学第 34 卷第 301-308 期(1999 年)。
- DOI:
- 发表时间:
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- 影响因子:0
- 作者:
- 通讯作者:
M.Watanabe, K.M.Itoh, Y.Ootuka, and E.E.Haller: "Critical Exponent for Localization Length in Neutron-Transmutation-Doped ^<70>Ge : Ga"Ann.Phys.(Leipzig). 8, Spec.Issue. SI-3-SI-9,273-276 (1999)
M.Watanabe、K.M.Itoh、Y.Ootuka 和 E.E.Haller:“中子嬗变掺杂 ^<70>Ge 中定位长度的临界指数:Ga”Ann.Phys.(莱比锡)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
伊藤公平: "Varible Range Hopping Conduction in Neutron- Transmutation- Doped ^<70> Ge : Ga"Phys.Stat.Sol.(b). 218. 211-216 (2000)
Kohei Ito:“中子嬗变掺杂 ^<70> Ge 中的可变范围跳跃传导”Phys.Stat.Sol.(b)。 218. 211-216 (2000)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
渡部道生,伊藤公平,大塚洋一,E.E.Haller: "Critical Exponent for Localization Length in Neutron- Transmutation- Doped ^<70> Ge : Ga"Ann.Phys.(Leipzig). 8. 273-276 (1999)
Michio Watanabe、Kohei Ito、Yoichi Otsuka、E.E.Haller:“中子嬗变掺杂 ^<70> Ge 中定位长度的临界指数:Ga”Ann.Phys.(莱比锡)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
K.M.Itoh: "Variable Range Hopping Conduction in Neutron-Transmutation-Doped ^<70>Ge : Ga"Phys.Stat.Sol.(b). 218. 211-216 (2000)
K.M.Itoh:“中子嬗变掺杂 ^<70>Ge : Ga 中的可变范围跳跃传导”Phys.Stat.Sol.(b)。
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- 影响因子:0
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ITOH Kohei其他文献
ITOH Kohei的其他文献
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{{ truncateString('ITOH Kohei', 18)}}的其他基金
Quantum entanglements and holographic memory operation in silicon
硅中的量子纠缠和全息存储操作
- 批准号:
22241024 - 财政年份:2010
- 资助金额:
$ 2.88万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Correlated diffusion of impurities and silicon in next-generation gate insulating film
下一代栅极绝缘膜中杂质和硅的相关扩散
- 批准号:
16360021 - 财政年份:2004
- 资助金额:
$ 2.88万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fabrication and control of nuclear-and electron spin quantum bits
核和电子自旋量子比特的制造和控制
- 批准号:
14076215 - 财政年份:2002
- 资助金额:
$ 2.88万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Growth and characterization of Isotopically Enrichied ^<28>Si Single Crystals
同位素富集^ 28 Si单晶的生长和表征
- 批准号:
13555005 - 财政年份:2001
- 资助金额:
$ 2.88万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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