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Quantum entanglements and holographic memory operation in silicon

Quantum entanglements and holographic memory operation in silicon
硅中的量子纠缠和全息存储操作
批准号:
22241024
负责人:
ITOH Kohei
金额:
$29.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010-04-01 至 2014-03-31
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中文摘要
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英文摘要
In order to realize silicon-based quantum computers, we have investigated the mechanisms and suppression of decoherence of electron and nuclear spin qubits, generated and detected highly pure quantum entanglements between phosphorus-donor electron and nuclear spins, developed a multi-state-storage systems known as quantum holographic memories, and explored the possibilities of bismuth donors as quantum memories to connect directly superconducting qubits. While above mentioned topics were listed in the originally proposed plan, we have further developed a way to utilize Si-29 nuclear spins as quantum memories and investigated a variety of spin triplet systems in silicon for application to quantum information processing.
期刊论文(52)
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会议论文
Site Selective Doping of Nitrogen-Vacancy Centers in Diamond Thin Film Fabricated Using Nitorogen-Doped Chemical Vapor Deposition with Micropatterned Substrate
采用微图案基底掺氮化学气相沉积法制备金刚石薄膜中氮空位中心的位点选择性掺杂
DOI: --
发表时间: 2013
期刊:
影响因子: --
作者: [T. Gomi, S. Tomizawa, K. Ohashi, K. M. Itoh, H. Watanabe, H. Umezawa, S. Shikata, and J. Ishi-Hayase]
通讯作者: and J. Ishi-Hayase
Room-Temperature Observation of Size Effects in Photoluminescence of Si0.8Ge0.2/Si Nanocolumns Prepared by Neutral Beam Etching
中性束刻蚀制备的 Si0.8Ge0.2/Si 纳米柱光致发光尺寸效应的室温观察
DOI: 10.1143/apex.5.082004
发表时间: 2012
期刊: Applied Physics Express
影响因子: 2.3
作者: [Futoshi Nishimoto, Satoshi Kaneko, Jiang Honwei, Satoshi Yokoyama, Junko Okumura, Megumi Sato, Tiengkham Pongvongsa, Jun Kobayashi, Daisuke Nonaka, Akiko Sato, Kazuhiko Moji, Sengchanh Kounnavong, Rii Hirano]
通讯作者: Rii Hirano
Spin Dependant Recombination Study of Bismuth in Silicon
硅中铋的自旋相关复合研究
DOI: --
发表时间: 2013
期刊:
影响因子: --
作者: [C. Culan, L. Dreher, F. Hoehne, M. Brandt, P. A. Mortemousque, T. Sekiguchi, R. G. Elliman, and K. M. Itoh]
通讯作者: and K. M. Itoh
Semiconductor Isotope Spintronics
半导体同位素自旋电子学
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Okazaki, T., 仙場浩一, 佐々木裕次, T. Yokoyama, 河野泰之, Kamada M, K. M. Itoh]
通讯作者: K. M. Itoh
65
    Correlated diffusion of impurities and silicon in next-generation gate insulating film
    • 批准号:
      16360021
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.41万
    • 财政年份:
      2004
    • 负责人:
      ITOH Kohei
    • 依托单位:
    Fabrication and control of nuclear-and electron spin quantum bits
    • 批准号:
      14076215
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $27.52万
    • 财政年份:
      2002
    • 负责人:
      ITOH Kohei
    • 依托单位:
    Growth and characterization of Isotopically Enrichied ^<28>Si Single Crystals
    • 批准号:
      13555005
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.45万
    • 财政年份:
      2001
    • 负责人:
      ITOH Kohei
    • 依托单位:
    Metal-Insulator Transition in Neutron Transmutation Doped Ge
    • 批准号:
      11440117
    • 项目类别:
      Grant-in-Aid for Scientific Research (B).
    • 资助金额:
      $2.88万
    • 财政年份:
      1999
    • 负责人:
      ITOH Kohei
    • 依托单位:
    海外基金