Growth and characterization of Isotopically Enrichied ^<28>Si Single Crystals

我们报告了天然Si （^< 28>Si）和同位素纯Si （^< 28>Si）的导热系数随温度的函数。同位素富集的^<28>Si是无位错的，电活性净杂质浓度（p型）小于1 × 10^<15>cm^<-3>。氧和碳的浓度小于1 × 10^<17>cm^< 3>，因为它在FTIR的检测限内。在室温下，测得^<28>Si样品的导热系数比^<28>Si样品的导热系数高10%左右。这一增长与最近报道的实验结果一致[A]。V. Gusev， A. M. Gibin， O. N. Morozkin， V. A. Gavva, and A. V. Mitin，无机材料，38,1305(2002)]，但与之前报道的室温下60%的值存在严重分歧。(T。鲁夫，R. W.海恩，M.阿森-帕尔默，E.格梅林，M.卡多纳，H. -J。Pohl， G. G. Devyatych和P. G. Sennikov, Solid State comm . 115, 243（2000）。因此，未来确定^<28>Si的真实导热系数是很重要的。

We report on the measurements of the thermal conductivity of natural (^<nat>Si) and isotopically pure ^<28>Si as a function of temperature. The isotopically enrichied ^<28>Si employed is dislocation free with the electrically active net-impurity concentration (p-type) less than 1x10^<15>cm^<-3>. Oxygen and carbon concentrations are less than 1x10^<17>cm^<-3> for it was under the detection limit of FTIR. At room temperature, the ^<28>Si sample is measured to have the thermal conductivity about 10% higher than that of ^<nat>Si. This increase is in agreement with the experimental result reported recently [A. V. Gusev, A. M. Gibin, O. N. Morozkin, V. A. Gavva, and A. V. Mitin, Inorganic Materials, 38, 1305 (2002)], but in sever disagreement with the previously reported value of 60% at the room temperature. [T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H. -J. Pohl, G. G. Devyatych and P. G. Sennikov, Solid State Commun. 115, 243 (2000).] It is therefore important to identify the true thermal conductivity of ^<28>Si in the future.