Growth and characterization of Isotopically Enrichied ^<28>Si Single Crystals

同位素富集^ 28 Si单晶的生长和表征

• 批准号: 13555005
• 负责人: ITOH Kohei
• 金额: $ 8.45万
• 依托单位: Keio University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555005/
• 关键词: silicon; thermal conductivity; IC; isotope; 半導体

We report on the measurements of the thermal conductivity of natural (^<nat>Si) and isotopically pure ^<28>Si as a function of temperature. The isotopically enrichied ^<28>Si employed is dislocation free with the electrically active net-impurity concentration (p-type) less than 1x10^<15>cm^<-3>. Oxygen and carbon concentrations are less than 1x10^<17>cm^<-3> for it was under the detection limit of FTIR. At room temperature, the ^<28>Si sample is measured to have the thermal conductivity about 10% higher than that of ^<nat>Si. This increase is in agreement with the experimental result reported recently [A. V. Gusev, A. M. Gibin, O. N. Morozkin, V. A. Gavva, and A. V. Mitin, Inorganic Materials, 38, 1305 (2002)], but in sever disagreement with the previously reported value of 60% at the room temperature. [T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H. -J. Pohl, G. G. Devyatych and P. G. Sennikov, Solid State Commun. 115, 243 (2000).] It is therefore important to identify the true thermal conductivity of ^<28>Si in the future.

我们报告的测量自然（^<nat>Si）和同位素纯^<28>Si的热导率作为温度的函数。所采用的同位素富集的^<28>Si是无位错的，具有小于1x 10 ^ cm^2的电活性净杂质浓度（p型）<15><-3>。氧和碳的浓度小于1 × 10 ~（-3）<17>cm ~（-3<-3>），低于FTIR的检测限。在室温下，测量的^<28>Si样品具有比^ Si高约10%的热导率<nat>。这一增加与最近报道的实验结果一致[A. V. Gusev，A. M.吉宾岛N. Morozkin，V. A. Gavva和A. V. Mitin，Inorganic Materials，38，1305（2002）]，但与先前报道的室温下60%的值严重不一致。[T.鲁夫河W. Henn，M. Asen-Palmer，E. Gmelin，M. Cardona，H. -J. Pohl，G. G. Devyatych和P.G. Sennikov，Solid State Commun. 115，243（2000）.]因此，重要的是要确定的真正导热系数的<28>硅在未来。

项目成果

T. Takahashi, S. Fukatsu, K. M. Itoh, M, Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K, Shiraishi: "Self-Diffusion of Si in Thermally Grown SiO_2 under Equilibrium Conditions"J. Appl. Phys.. Vol.93, No.6. 3674-3676 (2003)

T. Takahashi、S. Fukatsu、K. M. Itoh、M、Uematsu、A. Fujiwara、H. Kageshima、Y. Takahashi 和 K，Shiraishi：“平衡条件下热生长 SiO_2 中 Si 的自扩散”J。

T.Takahashi, S.Fukatsu, K.M.Itoh 他4名: "Self-Diffusion of Si in Thermally Grown SiO_2 under Equilibrium Condition"J.Appl.Phys.. 93・6. 3674-3676 (2003)

T.Takahashi、S.Fukatsu、K.M.Itoh 等 4 人：“平衡条件下热生长 SiO_2 中 Si 的自扩散”J.Appl.Phys.. 93・6 (2003)。

T.Takahashi, S.Fukatsu, K.M.Itoh 他4名: "Self-Diffusion of Si in Thermally Grown SiO_2 under Equilibrium Conditions"J. Appi. Phys.. 93・6. 3674-3676 (2003)

T.Takahashi、S.Fukatsu、K.M.Itoh 等 4 人：“平衡条件下热生长 SiO_2 中 Si 的自扩散”J. Appi. 93・6 (2003)。

伊藤 公平, 田久 賢一郎: "シリコン同位体単結晶の応用"応用物理. 70・10. 1187-1190 (2001)

伊藤晃平、拓健一郎：“硅同位素单晶的应用”应用物理学70・1190（2001）。